TLP332(F)

TLP331,TLP332 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP331,TLP332 Office Machine Household Use Equipment Programmable Controllers AC / DC−Input Module Telecommunication Unit in mm The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide infrared emitting diode optically coupled to a photo−transistor in a six lead plastic DIP package. This photocoupler provides the unique feature of high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. TLP332 is no−base internal connection for high−EMI environments. • Collector−emitter voltage: 55V (min.) • Isolation voltage: 5000Vrms (min.) • UL recognized: UL1577, file no. E67349 • Current transfer ratio Classi− fication (*) TOSHIBA Weight: 0.4 g Current Transfer Ratio (min.) Ta = 25°C Ta = −25~75°C IF = 0.5mA IF = 1mA IF = 1mA VCE = 0.5V VCE = 1.5V VCE = 0.5V Marking Of Classi− Fication Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, blank (*) Ex. 11−7A8 Standard: TLP331 Rank BV: TLP331(BV) (Note) Application type name for certification test, please use standard product type name, i.e. TLP331(BV): TLP331 Pin Configurations (top view) TLP331 1 6 1 6 2 5 2 5 3 4 3 4 1: ANODE 2: CATHODE 3: NC 4: EMITTER 5: COLLECTOR 6: BASE 1 TLP332 1: ANODE 2: CATHODE 3: NC 4: EMITTER 5: COLLECTOR 6: NC 2007-10-01 TLP331,TLP332 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF /°C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse Voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Collector−base voltage (TLP331) VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage (TLP331) VEBO 7 V Collector current IC 50 mA Power dissipation PC 150 mW ΔPC / °C −1.5 mW / °C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW PT/°C −2.5 mW / °C BVS 5000 Vrms Forward current Detector LED Forward current derating (Ta ≥ 39°C) Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta≥25°C) Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Symbol Min. Typ. Max. Unit VCC ― 5 25 V Forward current IF — 1.6 25 mA Collector current IC ― 1 10 mA Topr −25 ― 75 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP331,TLP332 Individual Electrical Characteristics (Ta = 25°C) LED Characteristic Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA Capacitance CT V = 0, f = 1MHz ― 30 ― pF V(BR)CEO IC = 0.5mA 55 ― ― V V(BR)ECO IE = 0.1mA 7 ― ― V V(BR)CBO IC = 0.1mA 80 ― ― V V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 100 nA VCE = 24V, Ta = 85°C ― 2 50 μA Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector−base breakdown voltage (TLP331) Emitter−base breakdown voltage Detector Symbol (TLP331) Collector dark current ICEO Collector dark current (TLP331) ICER VCE = 24V, Ta = 85°C RBE = 1MΩ ― 0.5 10 μA Collector dark current (TLP331) ICBO VCB = 10V ― 0.1 ― nA DC forward current gain (TLP331) hFE VCE = 5V, IC = 0.5mA ― 1000 ― ― Capacitance (collector to emitter) CCE V = 0 , f = 1MHz ― 12 ― pF Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Low input CTR Base photo−current (TLP331) Collector−emitter saturation voltage Symbol IC / IF IC / IF(low) IPB VCE(sat) Test Condition Min. Typ. Max. IF = 1mA, VCE = 0.5V Rank BV 100 ― 1200 200 ― 1200 50 ― ― 100 ― ― IF = 1mA, VCB = 5V ― 10 ― IC = 0.5mA IF = 1mA ― — 0.4 IC = 1mA IF = 1mA Rank BV ― 0.2 ― ― ― 0.4 Min. Typ. Max. IF = 0.5mA, VCE = 1.5V Rank BV % % μA V Coupled Electrical Characteristics (Ta = 25~75°C) Characteristic Current transfer ratio Low input CTR Symbol IC / IF IC / IF(low) Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV 3 50 ― ― 100 ― ― ― 50 ― ― 100 ― Unit % % 2007-10-01 TLP331,TLP332 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance (input to output) Test Condition CS Isolation resistance VS = 0, f = 1MHz RS V = 500V BVS Typ. Max. Unit ― 0.8 ― pF ― Ω 10 5×10 AC, 1 minute Isolation voltage Min. 10 14 5000 ― ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit ― 8 ― ― 8 ― ― 10 ― ― 8 ― ― 10 ― ― 50 ― ― 300 ― ― 12 ― ― 30 ― ― 100 ― Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Storage time tS Turn−off time tOFF Turn−on time tON Storage time tS Turn−off time tOFF Test Condition VCC = 10V IC = 2mA RL = 100Ω (Fig.1) RL = 4.7kΩ RBE = OPEN VCC = 5V, IF = 1.6mA (Fig.1) RL = 4.7kΩ RBE = 470kΩ (TLP331) VCC = 5V, IF = 1.6mA μs μs μs Fig. 1 Switching time test circuit IF RL IF VCC tS VCE VCE RBE tON 4 4.5V VCC 0.5V tOFF 2007-10-01 TLP331,TLP332 PC – Ta 200 80 160 Allowable collector power Dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 100 60 40 20 0 -20 0 20 40 60 80 100 120 80 40 0 -20 120 0 20 Ambient temperature Ta (°C) 40 Ta = 25°C 500 Ta = 25°C (mA) 1000 500 Forward current IF Pulse forward current IFP (mA) 120 300 300 100 50 30 10 3 100 50 30 10 5 3 10-3 10-2 3 10-1 3 1 0.6 100 3 0.8 DUTY CYCLE RATIO DR 1.0 1.2 1.4 1.6 Forward voltage VF ΔVF/ΔTa – IF 1.8 (V) IFP – VFP 1000 Pulse forward current IFP (mA) -3.2 Forward voltage temperature Coefficient ΔVF / ΔTa (mV/°C) 100 IF – V F 1000 Pulse width≦100μs 3000 80 Ambient temperature Ta (°C) IFP – DR 5000 60 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 500 300 100 50 30 10 Pulse width≦10μs 5 Repetitive frequency 3 = 100Hz Ta = 25°C -0.4 0.1 0.3 0.5 1 3 5 Forward current IF 10 30 1 0.6 50 (mA) 1.0 1.4 1.8 Pulse forward voltage 5 2.2 2.6 VFP (V) 2007-10-01 TLP331,TLP332 IC/IF – IF IC – VCE 4.0 1000 IF=1.0mA 3.5 300 (mA) 3.0 100 Collector current IC Current transfer ratio IC/IF (%) 500 Ta = 25°C 50 Ta = 25°C 30 VCE = 5V VCE = 1.5V VCE = 0.5V 0.8mA 2.5 2.0 0.6mA 1.5 0.5mA 10 0.1 0.3 0.5 1 Forward current IF 3 5 1.0 10 0.4mA (mA) 0.5 0.2mA IC – IF 50 30 0 0.1 Ta = 25°C 0.3 VCE = 5V 0.5 1 3 Collector-emitter voltage VCE = 1.5V 10 5 VCE (V) IC – Ta VCE = 0.5V 30 VCE = 1.5V 10 VCE = 0.5V IF=2mA 5 10 (mA) 5 1 Collector current IC Collector current IC (mA) 3 0.5 0.3 1mA 3 0.5mA 1 0.5 0.3 0.1 0.2mA 0.05 0.1 0.03 0.05 0.01 0.1 0.3 0.5 1 Forward current IF 3 5 0.03 10 (mA) -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 6 2007-10-01 TLP331,TLP332 ID – Ta 10 Switching Time – RL 1 5000 3000 VCE=24V 5V 1000 (μA) 500 10-1 300 Switching time (μs) Collector dark current ID(ICEO) IF = 1.6mA VCC = 5V 10V 100 Ta = 25°C 10-2 10 -3 tOFF 100 50 tS 30 tON 10-4 10 5 10-5 0 20 40 60 80 100 3 1 120 Ambient temperature Ta (°C) 3 5 10 Load resistance RL 7 30 50 100 (kΩ) 2007-10-01 TLP331,TLP332 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01