TLP3341
Photocouplers
Photorelay
TLP3341
1. Applications
•
High-Speed Memory Testers
•
High-Speed Logic IC Testers
•
Radio-Frequency Measuring Instruments
•
ATE (Automatic Test Equipment)
2. General
The TLP3341 is a photorelay in a 4-pin USOP that consists of a photo MOSFET optically coupled with an infrared
LED. The TLP3341 features low output capacitance, COFF, and thus fast on/off switching of a high-frequency
signal, making it ideal for switching applications in high-speed testers.
3. Features
(1)
Normally opened (1-Form-A)
(2)
OFF-state output terminal voltage: 40 V (min)
(3)
Trigger LED current: 3 mA (max)
(4)
ON-state current: 140 mA (max)
(5)
ON-state resistance: 7 Ω (typ.), 10 Ω (max)
(6)
OFF-state Capacitance: 0.7 pF (typ.), 1.3 pF (max)
(7)
Isolation voltage: 1000 Vrms (min)
(8)
Safety standard
UL-recognized: UL 1577, File No.E67349
4. Packaging and Pin Configuration
1: Anode
2: Cathode
3: Drain
4: Drain
11-2C1S
Start of commercial production
©2017-2020
Toshiba Electronic Devices & Storage Corporation
1
2011-10
2020-02-18
Rev.5.0
TLP3341
5. Internal Circuit
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
LED
Symbol
Input forward current
Input forward current derating
(Ta ≥ 25 )
Input reverse voltage
Input power dissipation
Input power dissipation derating
(Ta ≥ 25 )
Junction temperature
Detector OFF-state output terminal voltage
ON-state current
Note
Rating
Unit
IF
50
mA
∆IF/∆Ta
-0.5
mA/
VR
5
V
PD
50
mW
∆PD/∆Ta
-0.5
mW/
Tj
125
VOFF
40
V
ION
140
mA
ON-state current derating
(Ta ≥ 25 )
∆ION/∆Ta
-1.4
mA/
ON-state current (pulsed)
(t = 100 ms, duty = 1/10)
IONP
420
mA
PO
196
mW
∆PO/∆Ta
-1.96
mW/
Tj
125
Tstg
-40 to 125
Topr
-40 to 85
Output power dissipation
Output power dissipation derating
(Ta ≥ 25 )
Junction temperature
Common Storage temperature
Operating temperature
Lead soldering temperature
Isolation voltage
(10 s)
Tsol
(AC, 60 s, R.H. ≤ 60 %)
BVS
260
(Note 1)
1000
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
Caution:This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against
by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on.
©2017-2020
Toshiba Electronic Devices & Storage Corporation
2
2020-02-18
Rev.5.0
TLP3341
7. Recommended Operating Conditions (Note)
Characteristics
Symbol
Supply voltage
Input forward current
Note
Min
Typ.
Max
VDD
32
V
IF
5
7.5
20
mA
ON-state current
ION
140
Operating temperature
Topr
-20
65
Note:
Unit
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
8. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
LED
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
Input forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Input reverse current
IR
VR = 5 V
10
µA
Ct
Input capacitance
Detector OFF-state current
Output capacitance
V = 0 V, f = 1 MHz
15
pF
IOFF
VOFF = 40 V
1
nA
COFF
V = 0 V, f = 100 MHz, t < 1s
0.7
1.3
pF
Max
Unit
9. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Condition
Min
Typ.
Trigger LED current
IFT
ION = 100 mA
1.0
3
mA
Return LED current
IFC
IOFF = 10 µA
0.1
mA
ON-state resistance
RON
ION = 140 mA, IF = 5 mA, t < 1 s
5
10
Ω
Min
Typ.
Max
Unit
10. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Condition
Total capacitance (input to output)
CS
(Note 1) VS = 0 V, f = 1 MHz
Isolation resistance
RS
(Note 1) VS = 500 V, R.H. ≤ 60 %
Isolation voltage
BVS
(Note 1) AC, 60 s
0.4
pF
5 × 1010
1014
Ω
1000
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
11. Switching Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Turn-on time
tON
Turn-off time
tOFF
Note
Test Condition
See Fig. 11.1
RL = 200 Ω, VDD = 20 V, IF = 5 mA
Min
Typ.
Max
Unit
40
200
µs
140
200
Fig. 11.1 Switching Time Test Circuit and Waveform
©2017-2020
Toshiba Electronic Devices & Storage Corporation
3
2020-02-18
Rev.5.0
TLP3341
12. Characteristics Curves
12.1. Characteristics Curves (Note)
Fig. 12.1.1 IF - Ta
Fig. 12.1.2 ION - Ta
Fig. 12.1.3 IF - VF
Fig. 12.1.4 ION - VON
Fig. 12.1.5 RON - Ta
Fig. 12.1.6 IFT - Ta
©2017-2020
Toshiba Electronic Devices & Storage Corporation
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2020-02-18
Rev.5.0
TLP3341
Fig. 12.1.7 tON, tOFF - IF
Fig. 12.1.8 tON, tOFF - Ta
Fig. 12.1.9 IOFF - Ta
Fig. 12.1.10 IOFF - VOFF
Fig. 12.1.11 COFF/COFF(0V) - VOFF
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2017-2020
Toshiba Electronic Devices & Storage Corporation
5
2020-02-18
Rev.5.0
TLP3341
Package Dimensions
Unit: mm
Weight: 0.03 g (typ.)
Package Name(s)
TOSHIBA: 11-2C1S
©2017-2020
Toshiba Electronic Devices & Storage Corporation
6
2020-02-18
Rev.5.0
TLP3341
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Toshiba Electronic Devices & Storage Corporation
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2020-02-18
Rev.5.0