TLP350(F)

TLP350,TLP350F Photocouplers GaAℓAs Infrared LED & Photo IC TLP350,TLP350F 1. Applications • Industrial Inverters • Air Conditioner Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP350 is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance and specifications at temperatures up to 100 . The TLP350 has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±15 kV/µs. It has a totem-pole output that can both sink and source current. The TLP350 is ideal for IGBT of small capacity to middle capacity and power MOSFET gate drive. 3. Features (1) Buffer logic type (totem pole output) (2) Output peak current: ±2.5 A (max) (3) Operating temperature: -40 to 100  (4) Supply current: 2.0 mA (max) (5) Supply voltage: 15 to 30 V (6) Threshold input current: 5 mA (max) (7) Propagation delay time: 500 ns (max) (8) Common-mode transient immunity: ±15 kV/µs (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5 (Note 1) CQC-approved: GB4943.1, GB8898 Japan Factory Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (D4) (D4). Start of commercial production ©2016-2017 Toshiba Electronic Devices & Storage Corporation 1 2005-05 2017-10-18 Rev.1.0 TLP350,TLP350F 4. Packaging (Note) TLP350 TLP350(LF1,TP1) 11-10C401S 11-10C4S TLP350F 11-10C405S TLP350F(LF4,TP4) 11-10C402S Note: TLP350(LF5,TP5) 11-10C404S Through-hole type: TLP350, TLP350F Lead forming option: (LF1), (LF4), (LF5) Taping option: (TP1), (TP4), (TP5) 5. Pin Assignment 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: VO (Output) 7: N.C. 8: VCC ©2016-2017 Toshiba Electronic Devices & Storage Corporation 2 2017-10-18 Rev.1.0 TLP350,TLP350F 6. Internal Circuit (Note) Note: A 0.1-µF bypass capacitor must be connected between pin 8 and pin 5. 7. Principle of Operation 7.1. Truth Table Input LED M1 M2 Output H ON ON OFF H L OFF OFF ON L 7.2. Mechanical Parameters 7.62 mm Pitch TLP350 10.16 mm Pitch TLP350F Unit Creepage distances 7.0 (min) 8.0 (min) mm Clearance distances 7.0 (min) 8.0 (min) Internal isolation thickness 0.4 (min) 0.4 (min) Characteristics ©2016-2017 Toshiba Electronic Devices & Storage Corporation 3 2017-10-18 Rev.1.0 TLP350,TLP350F 8. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current Input forward current derating IF 20 mA -0.54 mA/ 1 A (Ta ≥ 85 ) ∆IFPT/∆Ta -25 mA/ VR 5 V IFPT Input power dissipation Peak low-level output current (Note 1) PD 40 mW (Ta ≥ 85 ) ∆PD/∆Ta -1.0 mW/ 125  (Ta = -40 to 100 ) IOPH (Note 2) -2.5 A (Ta = -40 to 100 ) IOPL (Note 2) +2.5 Junction temperature Detector Peak high-level output current Unit ∆IF/∆Ta Input reverse voltage Input power dissipation derating Rating (Ta ≥ 85 ) Peak transient input forward current Peak transient input forward current derating Note Tj Output voltage VO 35 V Supply voltage (Ta < 95 ) VCC 35 Supply voltage derating (Ta ≥ 95 ) ∆VCC/∆Ta -1.0 PO 260 mW (Ta ≥ 110 ) ∆PO/∆Ta -6.5 mW/ Output power dissipation Output power dissipation derating Junction temperature Tj Common Operating frequency f Operating temperature Topr Storage temperature Lead soldering temperature Isolation voltage (Note 3) Tstg V/ 125  50 kHz -40 to 100  -55 to 125 (10 s) Tsol (Note 4) 260 (AC, 60 s, R.H. ≤ 60 %) BVS (Note 5) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: A ceramic capacitor (0.1 µF) should be connected between pin 8 and pin 5 to stabilize the operation of a highgain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be placed within 1 cm of each pin. Note 1: Pulse width (PW) ≤ 1 µs, 300 pps Note 2: Exponential waveform. Pulse width ≤ 0.3 µs, f ≤ 15 kHz Note 3: If the rising slope of the supply voltage (VCC) for the detector is steep, stable operation of the internal circuits cannot be guaranteed. Be sure to set 3.0 V/µs or less for a rising slope of the VCC. Note 4: ≥ 2 mm below seating plane. Note 5: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. ©2016-2017 Toshiba Electronic Devices & Storage Corporation 4 2017-10-18 Rev.1.0 TLP350,TLP350F 9. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Input on-state current IF(ON) (Note 1) 7.5 Input off-state voltage VF(OFF) 0  10 mA  0.8 V Supply voltage VCC (Note 2) 15  30 Peak high-level output current IOPH (Note 3)   -2.0 Peak low-level output current IOPL (Note 3)   +2.0 Operating temperature Topr -40  100 A  Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. Note 1: The rise and fall times of the input on-current should be less than 0.5 µs. Note 2: Denotes the operating range, not the recommended operating condition. Note 3: Exponential waveform. IOPH ≥ -2.0 A (≤ 0.3 µs), IOPL ≤ 2.0 A (≤ 0.3 µs), Ta = 100  10. Electrical Characteristics (Note) (Unless otherwise specified, Ta = -40 to 100 ) Characteristics Input forward voltage Symbol Note Test Circuit Test Condition Min Typ. Max Unit VF  IF = 10 mA, Ta = 25   1.6 1.8 V ∆VF/∆Ta  IF = 10 mA  -2.4  mV/ Input reverse current IR  VR = 5 V, Ta = 25    10 µA Input capacitance Ct  V = 0 V, f = 1 MHz, Ta = 25   45 250 pF VCC = 30 V, IF = 5 mA, V8-6 = 3.5 V  -2.5 -1.0 A VCC = 15 V, IF = 5 mA, V8-6 = 7.0 V   -2.0 VCC = 30 V, IF = 0 mA, V6-5 = 2.5 V 1.0 2.5  VCC = 15 V, IF = 0 mA, V6-5 = 7.0 V 2.0   Input forward voltage temperature coefficient Peak high-level output current Peak low-level output current IOPH IOPL (Note 1) (Note 1) Fig. 13.1.1 Fig. 13.1.2 High-level output voltage VOH Fig. 13.1.3 VCC1 = +15 V, VEE1 = -15 V, RL = 200 Ω, IF = 5 mA 11.0 13.9  Low-level output voltage VOL Fig. 13.1.4 VCC1 = +15 V, VEE1 = -15 V, RL = 200 Ω, VF = 0.8 V  -14.9 -12.5 High-level supply current ICCH Fig. 13.1.5 VCC = 30 V, IF = 10 mA, VO = Open  1.5 2.0 Low-level supply current ICCL Fig. 13.1.6 VCC = 30 V, IF = 0 mA, VO = Open  1.5 2.0 Threshold input current (L/H) IFLH  VCC = 15 V, VO > 1 V, IO = 0 mA  1.2 5 Threshold input voltage (H/L) VFHL  VCC = 15 V, VO < 1 V, IO = 0 mA 0.8   V Supply voltage VCC  15  30 V VUVLO+ Fig. 13.1.9 IF = 5 mA, VO > 2.5 V 11.0 12.5 13.5 VUVLO- Fig. 13.1.9 IF = 5 mA, VO < 2.5 V 9.5 11.0 12.0 UVLOHYS Fig. 13.1.9  1.5  UVLO threshold voltage UVLO hysteresis V mA Note: All typical values are at Ta = 25 . Note : This device is designed for low power consumption, making it more sensitive to ESD than its predecessors. Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems. Note 1: IO application time ≤ 50 µs; single pulse. ©2016-2017 Toshiba Electronic Devices & Storage Corporation 5 2017-10-18 Rev.1.0 TLP350,TLP350F 11. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Test Conditions Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz Isolation resistance RS (Note 1) VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS (Note 1) AC, 60 s Min Typ. Max Unit  1.0  pF 1 × 1012 1014  Ω Vrms 3750   AC, 1 s in oil  10000  DC, 60 s in oil  10000  Vdc Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. 12. Switching Characteristics (Note) (Unless otherwise specified, Ta = -40 to 100 ) Characteristics Symbol Note Propagation delay time (L/H) tpLH (Note 1) Propagation delay time (H/L) tpHL Test Circuit Min Typ. Max Unit IF = 0 → 5 mA, VCC = 30 V, Rg = 20 Ω, Cg = 10 nF 50 150 500 ns (Note 1) IF = 5 → 0 mA, VCC = 30 V, Rg = 20 Ω, Cg = 10 nF 50 150 500 |tpHL-tpLH| (Note 1) IF = 0 ←→ 5 mA, VCC = 30 V, Rg = 20 Ω, Cg = 10 nF   350 Rise time tr (Note 1) IF = 0 → 5 mA, VCC = 30 V, Rg = 20 Ω, Cg = 10 nF  15  Fall time tf (Note 1) IF = 5 → 0 mA, VCC = 30 V, Rg = 20 Ω, Cg = 10 nF  8  Common-mode transient immunity at output high CMH (Note 2) VCM = 1000 Vp-p, IF = 5 mA, VCC = 30 V, Ta = 25 , VO(min) = 26 V -15   Common-mode transient immunity at output low CML (Note 3) VCM = 1000 Vp-p, IF = 0 mA, VCC = 30 V, Ta = 25 , VO(max) = 1 V 15   Pulse width distortion Fig. 13.1.7 Fig. 13.1.8 Test Condition kV/µs Note: All typical values are at Ta = 25 . Note 1: f = 25 kHz, duty = 50 %, input current tr = tf = 5 ns, CL is approximately 15 pF which includes probe and stray wiring capacitance. Note 2: CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (VO > 26 V). Note 3: CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VO < 1 V). ©2016-2017 Toshiba Electronic Devices & Storage Corporation 6 2017-10-18 Rev.1.0 TLP350,TLP350F 13. Test Circuits and Characteristics Curves 13.1. Test Circuits Fig. 13.1.1 IOPH Test Circuit Fig. 13.1.2 IOPL Test Circuit Fig. 13.1.3 VOH Test Circuit Fig. 13.1.4 VOL Test Circuit Fig. 13.1.5 ICCH Test Circuit Fig. 13.1.6 ICCL Test Circuit Fig. 13.1.7 Switching Time Test Circuit and Waveform Fig. 13.1.8 Common-Mode Transient Immunity Test Circuit and Waveform ©2016-2017 Toshiba Electronic Devices & Storage Corporation 7 2017-10-18 Rev.1.0 TLP350,TLP350F Fig. 13.1.9 VCC-VO(VUVLO) Test Circuit ©2016-2017 Toshiba Electronic Devices & Storage Corporation 8 2017-10-18 Rev.1.0 TLP350,TLP350F 13.2. Characteristics Curves (Note) Fig. 13.2.1 IF - VF Fig. 13.2.2 ∆VF/∆Ta - IF Fig. 13.2.3 IF - Ta Fig. 13.2.4 VCC - Ta Fig. 13.2.5 IFLH - Ta Fig. 13.2.6 VO(VUVLO) - VCC ©2016-2017 Toshiba Electronic Devices & Storage Corporation 9 2017-10-18 Rev.1.0 TLP350,TLP350F Fig. 13.2.7 ICCL - Ta Fig. 13.2.8 ICCH - Ta Fig. 13.2.9 VOL - Ta Fig. 13.2.10 VOH - Ta Fig. 13.2.11 VOL - IOPL Fig. 13.2.12 (VOH-VCC) - IOPH ©2016-2017 Toshiba Electronic Devices & Storage Corporation 10 2017-10-18 Rev.1.0 TLP350,TLP350F Fig. 13.2.13 tpLH,tpHL,|tpHL-tpLH| - Ta Fig. 13.2.14 tpLH,tpHL,|tpHL-tpLH| - IF Fig. 13.2.15 tpLH,tpHL,|tpHL-tpLH| - VCC Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016-2017 Toshiba Electronic Devices & Storage Corporation 11 2017-10-18 Rev.1.0 TLP350,TLP350F 14. Soldering and Storage 14.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. Fig. 14.1.1 An example of a temperature profile when Sn-Pb eutectic solder is used • Fig. 14.1.2 An example of a temperature profile when lead(Pb)-free solder is used When using soldering flow (Applicable to both eutectic solder and Lead(Pb)-Free solder) Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds. Mounting condition of 260  within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not exceeding 350  Heating by soldering iron must be done only once per lead. 14.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5  to 35  and 45 % to 75 %, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. ©2016-2017 Toshiba Electronic Devices & Storage Corporation 12 2017-10-18 Rev.1.0 TLP350,TLP350F 15. Land Pattern Dimensions (for reference only) Unit: mm TLP350 TLP350F Fig. 15.1 Lead forming and taping option (LF1), (TP1), (LF5), (TP5) Fig. 15.2 Lead forming and taping option (LF4), (TP4) 16. Marking (Note) TLP350 Note: TLP350F A different marking is used for photocouplers that have been qualified according to option (D4) of EN60747. See Fig.17.4 and Fig.17.5. ©2016-2017 Toshiba Electronic Devices & Storage Corporation 13 2017-10-18 Rev.1.0 TLP350,TLP350F 17. EN60747-5-5 Option (D4) Specification • Part number: TLP350, TLP350F (Note 1) • The following part naming conventions are used for the devices that have been qualified according to option (D4) of EN60747. Example: TLP350(D4-TP1,F) D4: EN60747 option TP1: Tape type F: [[G]]/RoHS COMPATIBLE (Note 2) Note 1: Use TOSHIBA standard type number for safety standard application. e.g., TLP350(D4-TP1,F) → TLP350 Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Fig. 17.1 EN60747 Isolation Characteristics ©2016-2017 Toshiba Electronic Devices & Storage Corporation 14 2017-10-18 Rev.1.0 TLP350,TLP350F Fig. 17.2 Insulation Related Specifications (Note) Note: Note: If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value. (e. g., at a standard distance between soldering eye centers of 7.5 mm). If this is not permissible, the user shall take suitable measures. This photocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Fig. 17.3 Marking on Packing for EN60747 Fig. 17.4 Marking Example (Note) Note: Fig. 17.5 Marking Example (Note) The above marking is applied to the photocouplers that have been qualified according to option (D4) of EN60747. ©2016-2017 Toshiba Electronic Devices & Storage Corporation 15 2017-10-18 Rev.1.0 TLP350,TLP350F Fig. 17.6 Measurement Procedure ©2016-2017 Toshiba Electronic Devices & Storage Corporation 16 2017-10-18 Rev.1.0 TLP350,TLP350F Package Dimensions Unit: mm TLP350 Weight: 0.54 g (typ.) Package Name(s) TOSHIBA: 11-10C4S ©2016-2017 Toshiba Electronic Devices & Storage Corporation 17 2017-10-18 Rev.1.0 TLP350,TLP350F Package Dimensions Unit: mm TLP350(LF1,TP1) Weight: 0.53 g (typ.) Package Name(s) TOSHIBA: 11-10C401S ©2016-2017 Toshiba Electronic Devices & Storage Corporation 18 2017-10-18 Rev.1.0 TLP350,TLP350F Package Dimensions Unit: mm TLP350(LF5,TP5) Weight: 0.53 g (typ.) Package Name(s) TOSHIBA: 11-10C405S ©2016-2017 Toshiba Electronic Devices & Storage Corporation 19 2017-10-18 Rev.1.0 TLP350,TLP350F Package Dimensions Unit: mm TLP350F Weight: 0.54 g (typ.) Package Name(s) TOSHIBA: 11-10C402S ©2016-2017 Toshiba Electronic Devices & Storage Corporation 20 2017-10-18 Rev.1.0 TLP350,TLP350F Package Dimensions Unit: mm TLP350F(LF4,TP4) Weight: 0.53 g (typ.) Package Name(s) TOSHIBA: 11-10C404S ©2016-2017 Toshiba Electronic Devices & Storage Corporation 21 2017-10-18 Rev.1.0 TLP350,TLP350F RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. ©2016-2017 Toshiba Electronic Devices & Storage Corporation 22 2017-10-18 Rev.1.0