TLP351(F)

TLP351 TOSHIBA Photocoupler IRED + Photo IC TLP351 Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter Unit: mm The TOSHIBA TLP351 consists of an infrared emitting diode and an integrated photodetector. This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs. • Peak output current: ±0.6 A (max) • Guaranteed performance over temperature: −40 to 100°C • Supply current: 2 mA (max) • Power supply voltage: 10 to 30 V • • Threshold input current : IF = 5 mA (max) Switching time (tpLH/tpHL) : 700 ns (max) • Common mode transient immunity: ±10 kV/μs • Isolation voltage: 3750 Vrms TOSHIBA • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1) 11-10C4S Weight: 0.54 g (typ.) Note 1: When a VDE approved type is needed, please designate the Option(D4). Truth Table Pin Configuration (top view) Input LED Tr1 Tr2 Output 1 8 H ON ON OFF H 2 7 L OFF OFF ON L 3 6 4 5 Schematic 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: VO (output) 7: N.C. 8: VCC ICC IF (Tr1) 8 VCC 2+ VF 3− (Tr2) IO 6 VO GND 5 A 0.1 μF bypass capacitor must be connected between pin 8 and 5. © 2019 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2002-05 1 2019-06-24 TLP351 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 20 mA ∆IF/∆Ta −0.54 mA/°C IFP 1 A Reverse voltage VR 5 V Power Dissipation PD 40 mW ∆PD /°C -1.0 mW/°C Tj 125 °C Forward current Forward current derating (Ta ≥ 85°C) LED Peak transient forward current (Note 1) Power Dissipation Derating (Ta ≥ 85°C) Junction temperature (Note 2) IOPH −0.6 A “L” peak output current (Note 2) IOPL 0.6 A Output voltage VO 35 V Supply voltage VCC 35 V Output Power Dissipation PO 260 mW ∆PO /°C -6.5 mW/°C Tj 125 °C f 25 kHz Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C Detector “H” peak output current Output Power Dissipation Derating (Ta ≥ 85°C) Junction temperature Operating frequency (Note 3) Lead soldering temperature (10 s) (Note 4) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 5) BVS 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 1 μs, 300 pps Note 2: Exponential waveform pulse width PW ≤ 10 μs, f ≤ 15 kHz Note 3: Exponential waveform IOPH ≤ −0.4 A (≤ 2.0 μs), IOPL ≤ +0.4 A (≤ 2.0 μs), Ta = 100 °C Note 4: It is 2 mm or more from a lead root. Note 5: Device considered a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Recommended Operating Conditions Characteristics Input current, ON Input voltage, OFF Supply voltage Peak output current Operating temperature (Note 7) Symbol Min Typ. Max Unit IF (ON) 7.5 ― 10 mA VF (OFF) 0 ― 0.8 V VCC 10 ― 30 V IOPH/IOPL ― ― ±0.2 A Topr −40 ― 100 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 7: Input signal rise time (fall time) < 0.5 μs © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP351 Electrical Characteristics (Ta = −40 to 100°C, unless otherwise specified) Symbol Test Circuit VF ― ∆VF/∆Ta Input reverse current Input capacitance Characteristics Forward voltage Temperature coefficient of forward voltage “H” Level Output current (Note 8) “L” Level “H” Level Min Typ.* Max Unit IF = 5 mA, Ta = 25 °C ― 1.55 1.70 V ― IF = 5 mA ― −2.0 ― mV/°C IR ― VR = 5 V, Ta = 25 °C ― ― 10 μA CT ― V = 0 V , f = 1 MHz,Ta = 25 °C ― 45 ― pF 1 VCC = 15 V IF = 5 mA V8-6 = 4 V ― −0.4 −0.2 V8-6 = 10 V ― −0.67 −0.4 2 VCC = 15 V IF = 0 mA V6-5 = 2 V 0.2 0.35 ― V6-5 = 10 V 0.4 0.63 ― IO = −100 mA, IF = 5 mA 6.0 8.5 ― IO = 100 mA, VF = 0.8 V ― 0.4 1.0 ― 1.4 2.0 ― 1.3 2.0 IOPH1 IOPH2 IOPL1 IOPL2 Test Condition 3 VOH VCC = 10 V Output voltage A V “L” Level VOL 4 “H” Level ICCH 5 “L” Level ICCL 6 VCC = 10 to 30 V IF = 10 mA VO open IF = 0 mA Threshold input current L → H IFLH ― VCC = 15 V, VO > 1 V ― 2.5 5 mA Threshold input voltage H → L VFHL ― VCC = 15 V, VO < 1 V 0.8 ― ― V VCC ― 10 ― 30 V Supply current Supply voltage ― mA *: All typical values are at Ta = 25°C Note 8: Duration of IO time ≤ 50 μs Note 9: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest power consumption design. General precaution to static electricity (ESD) is necessary for handling this component. Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit ― 1.0 ― pF 1014 ― Ω ― ― Vrms Capacitance input to output CS VS = 0V, f = 1MHz (Note5) Isolation resistance RS VS = 500 V, R.H. ≤ 60 % (Note5) 1×1012 Isolation voltage BVS AC,60 s © 2019 Toshiba Electronic Devices & Storage Corporation 3 3750 2019-06-24 TLP351 Switching Characteristics (Ta = −40 to 100°C, unless otherwise specified) Characteristics Symbol L → H tpLH H → L tpHL Test Circuit VCC = 30 V Propagation delay time Propagation delay difference between any two parts or channels PDD |tpHL-tpLH| Output rise time (10-90%) tr Output fall time (90-10%) tf Test Condition Cg = 3 nF CML IF = 0 → 5 mA 100 ― 700 IF = 5 → 0 mA 100 ― 700 −500 ― 500 IF = 0 → 5 mA ― 50 ― IF = 5 → 0 mA ― 50 ― ― ― ― ― Rg = 47 Ω Unit ns Cg = 3 nF ns Cg = 3 nF Common mode transient immunity at low level output Max VCC = 30 V, 7 Rg = 47 Ω CMH Typ.* ns Rg = 47 Ω VCC = 30 V Common mode transient immunity at high level output Min 8 IF = 5 mA VCM = 1000 Vp-p VO (min) = 26 V −10000 Ta = 25 °C IF = 0 mA VCC = 30 V 10000 VO (max) = 1 V V/μs *: All typical values are at Ta = 25°C Test Circuit 1: IOPH 1 Test Circuit 2: IOPL 8 1 8 V8-6 IOPL A IOPH IF A VCC 4 4 5 Test Circuit 3: VOH 1 8 VOH 1 8 V VOL VF VCC 4 5 Test Circuit 5: ICCH 1 V6-5 5 Test Circuit 4: VOL IF 4 VCC VCC V 5 Test Circuit 6: ICCL 8 ICCH 1 A 8 ICCL A IF VCC 4 VCC 4 5 © 2019 Toshiba Electronic Devices & Storage Corporation 4 5 2019-06-24 TLP351 Test Circuit 7: tpLH, tpHL, tr, tf, PDD 8 0.1 μF 1 IF IF VO Rg = 47 Ω VCC Cg = 3 nF 4 tr tf 90% 50% 10% VO 5 tpHL tpLH Test Circuit 8: CMH, CML CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. A VCM 0.1 μF IF SW B VO 4 − tf • SW A: IF = 5 mA VO VCM © 2019 Toshiba Electronic Devices & Storage Corporation 10% tr VCC 5 + 1000 V 90% 8 1 1V • SW B: IF = 0 mA 5 CML = 800 V tr (μs) CMH = 800 V tf (μs) CMH 26V CML 2019-06-24 TLP351 I F ─ VF －2.6 100 Ta = 25 °C C o e f f i c i e n t ⊿ V F / ⊿ Ta ( m V / °C) 50 30 F o r w a r d C u r r e n t I F (mA) ⊿ VF/⊿ Ta- IF 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1.0 1.4 1.2 1.8 1.6 －2.4 －2.2 －2.0 －1.8 －1.6 －1.4 0.1 2.0 0.3 0.5 F o r w a r d V o l t a g e VF (V) 5 (mA) Threshold input current IFLH F o r w a r d C u r r e n t I F (mA) 30 20 10 20 40 60 4 VO > 1V 2 1 -20 IO= 100mA , VCC=10V High Level Output Voltage VOH [V] Low Level Output Voltage VOL [V] 30 VF = 0.8V 0.4 0.2 -20 0 20 40 60 0 20 40 60 80 100 80 100 Ambient Temperature Ta (°C) 0.6 0 -40 30 3 0 -40 80 100 120 VOL - Ta 0.8 10 VCC = 15V Ambient Temperature Ta (°C) 1 5 IFLH – Ta 40 0 3 F o r w a r d C u r r e n t I F (mA) I F - Ta 0 -40 -20 1 80 25 VOH - Ta IF = 5mA Io = -100mA , VCC = 10V 20 15 10 5 0 -40 -20 100 Ambient Temperature Ta (°C) 0 20 40 60 Ambient Temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-24 TLP351 I C C L - Ta I C C H - Ta 10 VCC=30V High level supply current ICCH (mA) Low level supply current ICCL (mA) 10 8 6 4 2 0 -40 -20 0 20 40 60 80 I F=5mA VCC=30V 8 6 4 2 0 -40 100 -20 0 Ambient Temperature Ta(°C) High level output current IOPH (A) IF=0mA,VCC=15V (Note:9) V6-5=10.0V 0.4 V6-5=2.0V 0.2 -20 0 20 40 60 Ambient Temperature Ta (°C) 80 100 (V) 5.0 Ta=-100°C Ta=25°C Ta=-40°C 2.0 1.0 0.0 0.1 0.2 0.3 0 -0.2 100 0.4 0.5 Low Level Output Peak Current IOPL (A) IF=5mA,VCC=15V (Note:9) V8-6=4.0V -0.4 V8-6=10V -0.6 -0.8 -1 -40 -20 6.0 IF=0mA, VCC=15V 3.0 80 0 20 40 60 80 100 Ambient Temperature Ta (°C) IOPL – VOL 4.0 60 IOPH – Ta 0.6 6.0 Low level output voltage VOL (V) IOPL – Ta 0.8 0 -40 40 Ambient Temperature Ta(°C) High level output voltage VOH Low level output current IOPL (A) 1 20 IF=5mA, VCC=15V, Ta=-100°C 5.0 4.0 3.0 Ta=25°C Ta=-40°C 2.0 1.0 0.0 0.6 IOPH – VOH -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 High Level Output Peak Current IOPH (A) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-24 TLP351 t p H L , t p L H - Ta Propagation delay time tPLH, tPHL (ns) 500 400 300 IF=5mA,VCC=30V Rg=47Ω,Cg=3nF tpLH 200 100 0 -40 tpHL -20 0 20 40 60 80 100 Ambient Temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-06-24 TLP351 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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