TLP3825,TLP3825F
Photocouplers
Photorelay
TLP3825,TLP3825F
1. Applications
•
Mechanical relay replacements
•
Factory Automation (FA)
•
Programmable Logic Controllers (PLCs)
•
Measuring Instruments
•
Security Systems
•
ATE (Automatic Test Equipment)
2. General
The TLP3825 and TLP3825F photorelay consist of a photo MOSFET optically coupled to an infrared LED. It is
housed in a 8-pin DIP package. The low ON-state resistance and the high permissible ON-state current of the
TLP3825 and TLP3825F make it suitable for power line control applications.
3. Features
(1)
Normally opened (1-Form-A)
(2)
OFF-state output terminal voltage: 200 V (min)
(3)
Trigger LED current: 5.0 mA (max)
(4)
ON-state current: 1.5 A (max) (A connection)
(5)
ON-state resistance: 500 mΩ (max) (A connection)
(6)
Isolation voltage: 2500 Vrms (min)
(7)
Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
4. Mechanical Parameters
7.62-mm Pitch
TLP3825
10.16-mm Pitch
TLP3825F
Unit
Creepage distances
7.0 (min)
8.0 (min)
mm
Clearance distances
7.0 (min)
8.0 (min)
Internal isolation thickness
0.4 (min)
0.4 (min)
Characteristics
Start of commercial production
©2016-2020
Toshiba Electronic Devices & Storage Corporation
1
2017-03
2020-03-23
Rev.6.0
TLP3825,TLP3825F
5. Packaging (Note)
TLP3825
TLP3825(LF1,TP1)
11-10C401S
11-10C4S
TLP3825F
11-10C405S
TLP3825F(LF4,TP4)
11-10C402S
Note:
TLP3825(LF5,TP5)
11-10C404S
Through-hole type: TLP3825, TLP3825F
Lead forming option: (LF1), (LF4), (LF5)
Taping option: (TP1), (TP4), (TP5)
6. Pin Assignment
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: Drain
6: Source
7: Source
8: Drain
©2016-2020
Toshiba Electronic Devices & Storage Corporation
2
2020-03-23
Rev.6.0
TLP3825,TLP3825F
7. Internal Circuit
8. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
LED
Symbol
Input forward current
Note
Rating
Unit
IF
30
mA
Input forward current derating
(Ta ≥ 25 )
∆IF/∆Ta
-0.3
mA/
Input forward current (pulsed)
(100 µs pulse, 100 pps)
IFP
1
A
Input reverse voltage
VR
5
V
Input power dissipation
PD
50
mW
∆PD/∆Ta
-0.5
mW/
Tj
125
200
V
1.5
A
Input power dissipation derating
(Ta ≥ 25 )
Junction temperature
Detector OFF-state output terminal voltage
VOFF
ON-state current (A connection)
ION
(Note 1)
ON-state current (B connection)
1.5
ON-state current (C connection)
3.0
ON-state current derating (A connection)
(Ta ≥ 25 )
ON-state current derating (B connection)
(Ta ≥ 25 )
ON-state current derating (C connection)
ON-state current (pulsed)
-15
mA/
-15
(Ta ≥ 25 )
-30
IONP
PO
750
mW
(Ta ≥ 25 )
∆PO/∆Ta
-7.5
mW/
Junction temperature
Common Storage temperature
Operating temperature
4.5
Tj
125
Tstg
-55 to 125
Topr
-40 to 110
(10 s)
Tsol
260
AC, 60 s, R.H. ≤ 60 %
BVS
Lead soldering temperature
Isolation voltage
(Note 1)
(t = 100 ms, duty = 1/10)
Output power dissipation
Output power dissipation derating
∆ION/∆Ta
(Note 2)
2500
A
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: For an application circuit example, see Chapter 14.2.
Note 2: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
©2016-2020
Toshiba Electronic Devices & Storage Corporation
3
2020-03-23
Rev.6.0
TLP3825,TLP3825F
9. Recommended Operating Conditions (Note)
Characteristics
Symbol
Supply voltage
Min
Typ.
Max
VDD
160
V
IF
5
25
mA
Input forward current
Note
Unit
ON-state current (A connection)
ION
1.5
A
Operating temperature
Topr
-40
85
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
10. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
LED
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
Input forward voltage
VF
IF = 10 mA
1.50
1.64
1.80
V
Input reverse current
IR
VR = 5 V
10
µA
Ct
Input capacitance
Detector OFF-state current
Output capacitance
V = 0 V, f = 1 MHz
70
pF
IOFF
VOFF = 200 V
0.1
1
µA
COFF
V = 0 V, f = 1 MHz
400
pF
11. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Condition
Trigger LED current
IFT
ION = 1 A
Return LED current
IFC
IOFF = 1 µA
ON-state resistance (A connection)
RON
Min
Typ.
Max
Unit
mA
0.3
5.0
0.01
(Note 1) ION = 1 A, IF = 5 mA, t < 1 s
250
500
ON-state resistance (B connection)
ION = 1 A, IF = 5 mA, t < 1 s
130
250
mΩ
ON-state resistance (C connection)
ION = 1 A, IF = 5 mA, t < 1 s
125
Min
Typ.
Max
Unit
Note 1: For an application circuit example, see Chapter 14.2.
12. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Condition
Total capacitance (input to output)
CS
(Note 1) VS = 0 V, f = 1 MHz
Isolation resistance
RS
(Note 1) VS = 500 V, R.H. ≤ 60 %
Isolation voltage
BVS
(Note 1) AC, 60 s
0.8
pF
5×1010
1014
Ω
2500
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
13. Switching Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Turn-on time
tON
Turn-off time
tOFF
Note
Test Condition
See Fig. 13.1.
RL = 200 Ω, VDD = 20 V, IF = 5 mA
Min
Typ.
Max
Unit
0.25
5.0
ms
0.1
1.0
Fig. 13.1 Switching Time Test Circuit and Waveform
©2016-2020
Toshiba Electronic Devices & Storage Corporation
4
2020-03-23
Rev.6.0
TLP3825,TLP3825F
14. Characteristics Curves and Circuit Connections
14.1. Characteristics Curves (Note)
Fig. 14.1.1 IF - Ta
Fig. 14.1.2 ION - Ta
Fig. 14.1.3 IF - VF
Fig. 14.1.4 ION - VON
Fig. 14.1.5 RON - Ta
Fig. 14.1.6 IFT - Ta
©2016-2020
Toshiba Electronic Devices & Storage Corporation
5
2020-03-23
Rev.6.0
TLP3825,TLP3825F
Fig. 14.1.7 tON, tOFF - IF
Fig. 14.1.8 tON, tOFF - Ta
Fig. 14.1.9 IOFF - Ta
Fig. 14.1.10 IOFF - VOFF
Fig. 14.1.11 COFF/ COFF(0 V) - VOFF
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2020
Toshiba Electronic Devices & Storage Corporation
6
2020-03-23
Rev.6.0
TLP3825,TLP3825F
14.2. Circuit Connections
Fig. 14.2.1 A Connection
Fig. 14.2.2 B Connection
Fig. 14.2.3 C Connection
©2016-2020
Toshiba Electronic Devices & Storage Corporation
7
2020-03-23
Rev.6.0
TLP3825,TLP3825F
15. Soldering and Storage
15.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
•
When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig. 15.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
•
When using soldering flow
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
•
When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
15.2. Precautions for General Storage
•
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
•
Follow the precautions printed on the packing label of the device for transportation and storage.
•
Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,
respectively.
•
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
•
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
•
When restoring devices after removal from their packing, use anti-static containers.
•
Do not allow loads to be applied directly to devices while they are in storage.
•
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
©2016-2020
Toshiba Electronic Devices & Storage Corporation
8
2020-03-23
Rev.6.0
TLP3825,TLP3825F
16. Land Pattern Dimensions (for reference only)
(Unit: mm)
TLP3825
TLP3825F
Fig. 16.1 Lead forming and taping option
(LF1), (TP1), (LF5), (TP5)
Fig. 16.2 Lead forming and taping option
(LF4), (TP4)
17. Ordering Information (Example of Item Name)
Item Name
Packaging (Note 1)
Packing (MOQ)
TLP3825(F(O
TH
Magazine (50 pcs)
TLP3825(LF1,F(O
LF1
Magazine (50 pcs)
TLP3825(LF5,F(O
LF5
Magazine (50 pcs)
TLP3825(TP1,F(O
TP1
Tape and reel (1500 pcs)
TLP3825(TP5,F(O
TP5
Tape and reel (1500 pcs)
TLP3825F(F(O
TH, Wide forming
Magazine (50 pcs)
TLP3825F(LF4,F(O
LF4, Wide forming
Magazine (50 pcs)
TLP3825F(TP4,F(O
TP4, Wide forming
Tape and reel (1000 pcs)
Note 1: TH: Through-hole, LF/TP: Lead forming for surface mount
©2016-2020
Toshiba Electronic Devices & Storage Corporation
9
2020-03-23
Rev.6.0
TLP3825,TLP3825F
Package Dimensions
Unit: mm
TLP3825
Weight: 0.54 g (typ.)
Package Name(s)
TOSHIBA: 11-10C4S
©2016-2020
Toshiba Electronic Devices & Storage Corporation
10
2020-03-23
Rev.6.0
TLP3825,TLP3825F
Package Dimensions
Unit: mm
TLP3825(LF1,TP1)
Weight: 0.53 g (typ.)
Package Name(s)
TOSHIBA: 11-10C401S
©2016-2020
Toshiba Electronic Devices & Storage Corporation
11
2020-03-23
Rev.6.0
TLP3825,TLP3825F
Package Dimensions
Unit: mm
TLP3825(LF5,TP5)
Weight: 0.53 g (typ.)
Package Name(s)
TOSHIBA: 11-10C405S
©2016-2020
Toshiba Electronic Devices & Storage Corporation
12
2020-03-23
Rev.6.0
TLP3825,TLP3825F
Package Dimensions
Unit: mm
TLP3825F
Weight: 0.54 g (typ.)
Package Name(s)
TOSHIBA: 11-10C402S
©2016-2020
Toshiba Electronic Devices & Storage Corporation
13
2020-03-23
Rev.6.0
TLP3825,TLP3825F
Package Dimensions
Unit: mm
TLP3825F(LF4,TP4)
Weight: 0.53 g (typ.)
Package Name(s)
TOSHIBA: 11-10C404S
©2016-2020
Toshiba Electronic Devices & Storage Corporation
14
2020-03-23
Rev.6.0
TLP3825,TLP3825F
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA".
Hardware, software and systems described in this document are collectively referred to as "Product".
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in
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Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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©2016-2020
Toshiba Electronic Devices & Storage Corporation
15
2020-03-23
Rev.6.0
