TLP388
Photocouplers
Infrared LED & Photo Transistor
TLP388
1. Applications
•
Programmable Logic Controllers (PLCs)
•
Air Conditioner Inverters
2. General
TLP388 consists of phototransistors optically coupled to infrared LED. The TLP388 is housed in the thin SO6L
(4 pin) package and that guarantees high temperature operation (Ta = 125 � max) .
With the high brakedown voltage between the collector and emitter (VCEO) 350 V, TLP388 is suitable for use in
programmable logic controllers (PLCs), and home appliances, include air conditioners.
3. Features
(1)
Collector-emitter voltage: 350 V (min)
(2)
Current transfer ratio: 50 % (min) (@IF = 5 mA, VCE = 5 V)
Rank GB: 100 % (min) (@IF = 5 mA, VCE = 5 V)
(3)
Isolation voltage: 5000 Vrms (min)
(4)
Operating temperature range: -55 to 125 �
(5)
Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (D4) .
4. Packaging and Pin Assignment
1: Anode
3: Cathode
4: Emitter
6: Collector
11-4P1A
Start of commercial production
2016-02
©2016-2022
Toshiba Electronic Devices & Storage Corporation
1
2022-05-18
Rev.3.0
TLP388
5. Mechanical Parameters
Characteristics
Min
Unit
Creepage distances
8.0
mm
Clearance
8.0
Internal isolation thickness
0.4
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �)
Characteristics
LED
Symbol
Input forward current
Input forward current derating
IF
(Ta ≥ 90 �)
Input forward current (pulsed)
∆IF/∆Ta
IFP
Input power dissipation
Input power dissipation
derating
Note
(Ta ≥ 90 �)
(Note 1)
Rating
Unit
50
mA
-1.11
mA/�
1
A
PD
100
mW
∆PD/∆Ta
-2.22
mW/�
Input reverse voltage
VR
5
V
Junction temperature
Tj
135
�
Detector Collector-emitter voltage
VCEO
350
V
Emitter-collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
∆PC/∆Ta
-1.36
mW/�
Collector power dissipation
derating
(Ta ≥ 25 �)
Junction temperature
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
135
�
-55 to 125
�
Tstg
-55 to 125
�
(10 s)
Tsol
260
�
PT
250
mW
(Ta ≥ 25 �)
∆PT/∆Ta
-2.27
mW/�
(AC, 60 s, R.H. ≤ 60 %)
BVS
5000
Vrms
Total power dissipation
Total power dissipation
derating
Tj
Topr
(Note 2)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 0.1 ms, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
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Toshiba Electronic Devices & Storage Corporation
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Rev.3.0
TLP388
7. Electrical Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
LED
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
Input forward voltage
VF
IF = 10 mA
1.1
1.25
1.4
V
Input reverse current
IR
VR = 5 V
�
�
10
µA
V = 0 V, f = 1 MHz
Input capacitance
Ct
�
30
�
pF
Detector Collector-emitter breakdown
voltage
V(BR)CEO
IC = 0.1 mA
350
�
�
V
Emitter-collector breakdown
voltage
V(BR)ECO
IE = 0.1 mA
7
�
�
V
Dark Current
IDARK
VCE = 300 V
�
0.01
0.2
µA
VCE = 300 V, Ta = 85 �
�
�
50
Collector-emitter capacitance
CCE
V = 0 V, f = 1 MHz
�
10
�
pF
8. Coupled Electrical Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
Current transfer ratio
Symbol
IC/IF
Note
Test Condition
(Note 1) IF = 5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V, Rank GB
Saturated current transfer ratio
IC/IF(sat)
Collector-emitter saturation voltage VCE(sat)
OFF-state collector current
IC(off)
Min
Typ.
Max
Unit
50
�
600
%
100
�
600
IF = 10 mA, VCE = 0.4 V
�
60
�
IF = 10 mA, VCE = 0.4 V, Rank GB
30
�
�
IC = 2.4 mA, IF = 8 mA
�
�
0.4
IC = 0.2 mA, IF = 1 mA
�
0.2
�
IC = 0.2 mA, IF = 1 mA, Rank GB
�
�
0.4
VF = 0.7 V, VCE = 350 V
�
�
200
V
µA
Note 1: See Table 8.1 for current transfer ratio.
Table 8.1
Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T a = 25 �)
Rank
Test Condition
Blank
Current transfer ratio
IC/IF
Min
Current transfer ratio
IC/IF
Max
Marking of classification
Unit
50
600
Blank, GB
%
100
600
GB
IF = 5 mA, VCE = 5 V
GB
Note:
Specify both the part number and a rank in this format when ordering.
Example: TLP388(GB,E
For safety standard certification, however, specify the part number alone.
Example: TLP388(GB,E → TLP388
9. Isolation Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
Total capacitance (input to output)
CS
(Note 1) VS = 0 V, f = 1 MHz
�
0.8
�
pF
Isolation resistance
RS
(Note 1) VS = 500 V, R.H. ≤ 60 %
1012
1014
�
Ω
(Note 1) AC, 60 s
5000
�
�
Vrms
Isolation voltage
BVS
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
3
2022-05-18
Rev.3.0
TLP388
10. Switching Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Rise time
tr
Fall time
tf
Note
Test Condition
VCC = 10 V, IC = 2 mA,
RL = 100 Ω
Min
Typ.
Max
Unit
�
2
�
µs
�
3
�
Turn-on time
ton
�
3
�
Turn-off time
toff
�
3
�
Turn-on time
ton
�
3
�
Storage time
ts
�
60
�
Turn-off time
toff
�
80
�
Fig. 10.1
See Fig. 10.1.
RL = 1.9 kΩ, VCC = 5 V,
IF = 16 mA
Switching Time Test Circuit and Waveform
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Toshiba Electronic Devices & Storage Corporation
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2022-05-18
Rev.3.0
TLP388
11. Characteristics Curves (Note)
Fig. 11.1
Fig. 11.3
Fig. 11.5
IF - Ta
Fig. 11.2
PC - Ta
I FP - D R
Fig. 11.4
IF - VF
∆V F /∆T a - I F
©2016-2022
Toshiba Electronic Devices & Storage Corporation
Fig. 11.6
5
I FP - V FP
2022-05-18
Rev.3.0
TLP388
Fig. 11.7
Fig. 11.9
I C - V CE
Fig. 11.8
I DARK - T a
Fig. 11.11
Fig. 11.10
IC - IF
©2016-2022
Toshiba Electronic Devices & Storage Corporation
Fig. 11.12
6
I C - V CE
V CE(sat) - T a
I C /I F - I F
2022-05-18
Rev.3.0
TLP388
Fig. 11.13
Note:
IC - Ta
Fig. 11.14
Switching Time - R L
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
7
2022-05-18
Rev.3.0
TLP388
12. Soldering and Storage
12.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
•
When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
•
When using soldering flow
Preheat the device at a temperature of 150 � (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 � within 10 seconds is recommended.
Flow soldering must be performed once.
•
When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 � or within 3 seconds not
exceeding 350 �
Heating by soldering iron must be done only once per lead.
12.2. Precautions for General Storage
•
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
•
Follow the precautions printed on the packing label of the device for transportation and storage.
•
Keep the storage location temperature and humidity within a range of 5 � to 35 � and 45 % to 75 %,
respectively.
•
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
•
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
•
When restoring devices after removal from their packing, use anti-static containers.
•
Do not allow loads to be applied directly to devices while they are in storage.
•
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
8
2022-05-18
Rev.3.0
TLP388
13. Land Pattern Dimensions (for reference only)
Unit: mm
14. Marking
©2016-2022
Toshiba Electronic Devices & Storage Corporation
9
2022-05-18
Rev.3.0
TLP388
15. EN 60747-5-5 Option (D4) Specification
•
Part number: TLP388 (Note 1)
•
The following part naming conventions are used for the devices that have been qualified according to
option (D4) of EN 60747.
Example: TLP388(D4GB-TL,E
D4: EN 60747 option
GR: CTR rank
TL: Tape type (TPL)
E: [[G]]/RoHS COMPATIBLE (Note 2)
Note 1: Use TOSHIBA standard type number for safety standard application.
e.g., TLP388(D4GB-TL,E → TLP388
Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Fig. 15.1
©2016-2022
Toshiba Electronic Devices & Storage Corporation
EN 60747 Insulation Characteristics
10
2022-05-18
Rev.3.0
TLP388
Table 15.1
Insulation Related Specifications (Note)
Isoration related specification
Symbol
TLP388
Minimum creepage distance
Cr
8.0 mm
Minimum clearance
Cl
8.0 mm
Minimum insulation thickness
ti
0.4 mm
CTI
500
Comparative tracking index
Note:
This photocoupler is suitable for safe electrical isolation only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
Fig. 15.2
Fig. 15.3
Note:
Marking on Packing
Marking Example (Note)
The above marking is applied to the photocouplers that have been qualified according to option (D4) of EN 60747.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
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2022-05-18
Rev.3.0
TLP388
Fig. 15.4
©2016-2022
Toshiba Electronic Devices & Storage Corporation
Measurement Procedure
12
2022-05-18
Rev.3.0
TLP388
16. Ordering Information
When placing an order, please specify the part number, CTR rank, tape type and quantity as shown in the following
example.
Example) TLP388(GB-TPL,E 3000 pcs
Part number: TLP388
CTR rank: GB
Tape type: TPL (L direction)
[[G]]/RoHS COMPATIBLE: E (Note 1)
Quantity (must be a multiple of 3000): 3000 pcs
Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
13
2022-05-18
Rev.3.0
TLP388
Package Dimensions
Unit: mm
Weight: 0.128 g (typ.)
Package Name(s)
TOSHIBA: 11-4P1A
©2016-2022
Toshiba Electronic Devices & Storage Corporation
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2022-05-18
Rev.3.0
TLP388
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