TLP3902(TPR,U,F)

TLP3902 TOSHIBA PHOTOCOUPLER IRED & PHOTO-DIODE ARRAY TLP3902 SOLID STATE RELAY PROGRAMMABLE CONTROLLERS MOSFET GATE DRIVER Unit: mm The TOSHIBA mini flat coupler TLP3902 is a small outline coupler, suitable for surface mount assembly. The TLP3902 consists of an infrared emitting diode, optically coupled to a series connected photo diode array which is suitable for MOS FET gate drive. Features • Open Voltage : 7 V (min) • Short Current : 5 μA (min) • Isolation Voltage : 2500 Vrms (min) • UL-recognized : UL 1577, File No.E67349 • cUL-recognized :CSA Component Acceptance Service No.5A File No.E67349 TOSHIBA Pin Configuration (top view) 1 3 11-4C1 Weight: 0.09 g (typ.) 6 4 1. ANODE 3. CATHODE 4. CATHODE 6. ANODE Start of commercial production © 2019 Toshiba Electronic Devices & Storage Corporation 1 2006-06 2019-06-24 TLP3902 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Forward Current Rating Unit IF 50 mA ΔIF / °C -0.5 mA / °C Reverse Voltage VR 5 V Diode power dissipation PD 100 mW ΔPD /°C -1.0 mW/°C Tj 125 °C Forward Current IFD 50 μA Reverse Voltage VRD 10 V Output power dissipation PO 0.5 mW Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55 to 125 °C Operating Temperature Range Topr -40 to 85 °C Lead Soldering Temperature (10 s) Tsol 260 °C BVS 2500 Vrms Forward Current Derating (Ta ≥ 25°C) LED Diode power dissipation derating (Ta ≥ 25°C) Junction Temperature DETECTOR Isolation Voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit IF 7 — 20 mA Topr -25 — 65 °C Forward Current Operating Temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25°C) Characteristic LED DETECTOR Symbol Test Condition Min Typ. Max Unit 1.10 1.15 1.3 V Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V — — 10 μA Capacitance CT V = 0 V, f = 1 MHz — 30 — pF Forward Voltage VFD IFD = 10 μA — 9.6 — V Reverse Current IRD VRD = 10 V — 1 — nA Capacitance (Anode to Cathode) CTD V = 0 V, f = 1 MHz — 8 — pF © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP3902 Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Open-Circuit Voltage VOC IF = 10 mA 7 9.5 — V Short-Circuit Current ISC IF = 10 mA 5 10 — μA Min Typ. Max Unit — 0.8 — pF 5×1010 1014 — Ω 2500 — — Vrms Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance Input to Output CS VS = 0 V, f = 1 MHz Isolation Resistance RS VS = 500 V, R.H. ≤ 60 % Isolation Voltage BVS AC, 60 s Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Turn-on Time tON — 0.6 — ms Turn-off Time tOFF IF = 10 mA, RSH = 1 MΩ CL = 1000 pF (Note 2) — 2 — ms Note 2: SWITCHING TIME TEST CIRCUIT IF VOUT RSH IF CL VOUT 0V RSH: External Shunt Resistance © 2019 Toshiba Electronic Devices & Storage Corporation 3 5V 1V tON tOFF 2019-06-24 TLP3902 I F ─ Ta 90 80 70 60 50 40 30 20 10 0 -20 0 20 40 I F ─ VF 100 FORWARD CURRENT I F (mA) ALLOWABLE FORWARD CURRENT I F (mA) 100 60 80 100 Ta = 25 °C 50 30 10 5 3 1 0.5 0.3 0.1 0.6 120 0.8 AMBIENT TEMPERATURE Ta (°C) I O ─ VO 40 5 mA 10 mA 15 mA 20 mA 25 mA 0 2 4 6 8 OUTPUT VOLTAGE VO (V) 13 12 9 8 Ta = 25 °C RSH = OPEN 2.2MΩ 7 1MΩ 6 510kΩ 5 4 3 2 1 0 1 3 5 10 10 1.8 1MΩ 510kΩ 3 510kΩ 1MΩ 1 2.2MΩ 0.3 0.1 0.03 102 103 300 50 FORWARD CURRENT I F (mA) CL (pF) Ta = 25 °C 30 10 5 3 1 30 104 3000 ISC ─ I F 100 11 10 1.6 RSH=2.2MΩ LOAD CAPACITANCE VOC ─ I F 14 1.4 Ta = 25 °C I F = 10 mA tON tOFF 30 0.01 10 I SC (µA) -40 OPEN VOLTAGE VOC (V) SWITCHING TIME tON,tOFF (ms) IF =0 mA SHORT CURRENT OUTPUT CURRENT I O (µA) 20 -20 1.2 tON,tOFF ─ CL 100 Ta = 25 °C 0 1 FORWARD VOLTAGE VF (V) 1 3 5 30 10 FORWARD CURRENT I F (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-24 TLP3902 VOC ─ Ta 14 I F = 10 mA 18 SHORT CURRENT I SC (µA) OPEN VOLTAGE VOC (V) 13 12 11 10 9 8 7 6 5 4 -20 0 20 40 ISC ─ Ta 20 60 80 16 14 12 10 8 6 4 2 0 -20 100 AMBIENT TEMPERATURE Ta (°C) I F = 10 mA 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-24 TLP3902 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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