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TLP4007G

TLP4007G

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP4007G - Telecommunication Measurement Equipment Security Equipment FA - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
TLP4007G 数据手册
TLP4007G TOSHIBA Photocoupler Photorelay TLP4007G Telecommunication Measurement Equipment Security Equipment FA The Toshiba TLP4007G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage. • • • • • • Normally closed (1-form-B) device, normally opened (1-form-A) device Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 100 mA (max) On-state resistance: 50 Ω (max) Isolation voltage: 2500 Vrms (min) Unit: mm Pin Configuration (top view) JEDEC 1 8 ― ― 11-10C4 JEITA TOSHIBA Weight: 0.54 g (typ.) 2 7 1: Anode (1b) 3 6 2: Cathode (1b) 3: Anode (1a) 4: Cathode (1a) 5: Drain D1 (1a) 6: Drain D2 (1a) 4 5 7: Drain D3 (1b) 8: Drain D4 (1b) 1 2007-10-01 TLP4007G Absolute Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta > 25°C) = LED Peak forward current Reverse voltage Junction temperature Off-state output terminal voltage One channel operation On-state current Detector Two channel operations (1a1b simultaneous operation) One channel operation Two channel operations (1a1b simultaneous operation) ΔION/°C Tj Tstg Topr Tsol (Note 1) BVS −1.0 125 −55 to 125 −40 to 85 260 2500 mA/°C °C °C °C °C Vrms ION 100 mA Symbol IF ΔIF/°C IFP VR Tj VOFF Rating 50 −0.5 1 5 125 350 Unit mA mA/°C A V °C V On-state current derating (Ta > 25°C) = Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min, R.H. < 60%) = Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. Recommended Operating Conditions Characteristics Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min ⎯ 5 ⎯ −20 Typ. ⎯ 10 ⎯ ⎯ Max 280 25 100 65 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage LED Reverse current Capacitance Detector Off-state current Capacitance (1b) Capacitance (1a) Symbol VF IR CT IOFF COFF IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 350 V V = 0, f = 1 MHz, IF = 5 mA V = 0, f = 1 MHz Test Condition Min 1.0 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. 1.15 ⎯ 30 ⎯ 30 30 Max 1.3 10 ⎯ 1 ⎯ ⎯ Unit V μA pF μA pF 2 2007-10-01 TLP4007G Coupled Electrical Characteristics (Ta = 25°C) Characteristics Trigger LED current Form 1a 1b 1a 1b (Note 2) ⎯ Symbol IFT IFC IFC IFT RON Test Condition ION = 100 mA IOFF = 10 μA IOFF = 10 μA ION = 100 mA ION = 100 mA, t < 1s ION = 100 mA Min ⎯ Typ. 1 Max 3 Unit mA Return LED current 0.1 ⎯ ⎯ ⎯ 27 40 ⎯ 35 50 mA On-state resistance Ω Note 2: 1-form-A: IF = 5 mA, 1-form-B: IF = 0 mA Isolation Characteristics (Ta = 25°C) Characteristics Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. < 60% = AC, 1 min Isolation voltage BVS AC, 1 s, in oil DC, 1 min, in oil Min ⎯ 5 × 10 10 Typ. 0.8 10 14 Max ⎯ ⎯ ⎯ ⎯ ⎯ Unit pF Ω Vrms Vdc 2500 ⎯ ⎯ ⎯ 5000 5000 Switching Characteristics (Ta = 25°C) Characteristics 1b Turn-on time Turn-off time Turn-on time Turn-off time Symbol tON tOFF tON tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA RL = 200 Ω VDD = 20 V, IF = 5 mA Min ⎯ (Note 3) ⎯ ⎯ (Note 3) ⎯ Typ. 0.25 0.5 0.3 0.15 Max 1 1 1 1 Unit ms 1a ms Note 3: Switching time test circuit IF 1b VDD IF VOUT 2 7 VOUT 10% tON 90% tOFF 1 8 RL IF 3 1a 6 RL VDD IF VOUT 4 5 VOUT 10% tON 90% tOFF 3 2007-10-01 TLP4007G Characteristics curves for 1-form-A/B IF – Ta 100 160 ION – Ta Allowable on-state current ION (mA) IF (mA) 80 120 Allowable forward current 60 80 40 40 20 0 −20 0 20 40 60 80 100 120 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IF – V F 100 Ta = 25°C 30 (mA) Forward current IF 10 3 1 0.3 0.1 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward voltage VF (V) 4 2007-10-01 TLP4007G Characteristics curves for 1-form-B RON – Ta 50 ION = 100 mA 5 ION = 100 mA t
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