TLP4026G(F)

TLP4026G TOSHIBA Photocoupler Photorelay TLP4026G Telecommunication Measuring Equipment Security Equipment FA Unit: mm The Toshiba TLP4026G consists of an infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage. • Normally closed (1-form-B) device, normally opened (1-form-A) device • Peak off-state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On-state current: 120 mA (max) • On-state resistance: 25 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 Pin Configuration (top view) 1 JEDEC ― JEITA ― TOSHIBA 8 11-10H1 Weight: 0.2 g (typ.) 2 7 1: Anode (1b) 3 6 2: Cathode (1b) 3: Anode (1a) 4: Cathode (1a) 5: Drain D1 (1a) 6: Drain D2 (1a) 4 5 7: Drain D3 (1b) 8: Drain D4 (1b) Start of commercial production 2002-08 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP4026G Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA ∆IF/°C −0.5 mA/°C Peak forward current IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD / °C -0.5 mW/°C Tj 125 °C VOFF 350 V ION 120 mA ∆ION/°C −1.2 mA/°C Forward current LED Forward current derating (Ta ≥ 25°C) Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage One channel operation Detector On-state current On-state current derating (Ta ≥ 25°C) Two channel operations (1a1b simultaneous operation) One channel operation Two channel operations (1a1b simultaneous operation) Output power dissipation PO 370 mW ΔPO / °C −3.7 mW / °C Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 1500 Vrms Output power dissipation derating (Ta ≥ 25°C) Junction temperature Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ― ― 280 V Forward current IF 5 ― 25 mA On-state current ION ― ― 120 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP4026G Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA Capacitance CT VF = 0 V, f = 1 MHz  30  pF VOFF = 350 V   1 μA  65  pF Off-state current Capacitance (1b) Capacitance (1a) IOFF COFF © 2019 Toshiba Electronic Devices & Storage Corporation V = 0 V f = 1 MHz, IF = 5 mA V = 0 V, f = 1 MHz, IF = 0 mA 3 2019-06-24 TLP4026G Coupled Electrical Characteristics (Ta = 25°C) Characteristics Trigger LED current Return LED current On-state resistance Form Symbol Test Condition 1a IFT ION = 120 mA 1b IFC IOFF = 10 μA 1a IFC IOFF = 10 μA 1b IFT ION = 120 mA  RON ION = 120 mA (Note 2) Min Typ. Max Unit  1 3 mA 0.1   mA  15 25 Ω Min Typ. Max Unit  0.8  pF 1014  Ω 1500   Vrms Min Typ. Max Unit   1   3   1   1 Note 2: 1-form-A: IF = 5 mA, 1-form-B: IF = 0 mA Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output Test Condition VS = 0 V, f = 1 MHz CS Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s 5× 1010 Switching Characteristics (Ta = 25°C) Characteristics 1b 1a Symbol Turn-on time tON Turn-off time tOFF Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 3) RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 3) ms ms Note 3: Switching time test circuit IF 1 1b 8 RL VDD IF VOUT 2 VOUT 7 10% tON IF 3 1a 6 RL 90% tOFF VDD IF VOUT 4 VOUT 5 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 4 90% tOFF 2019-06-24 TLP4026G Characteristics curves for 1-form-A/B IF – Ta ION – Ta 240 200 Allowable on-state current Allowable forward current 60 40 20 0 −20 (mA) 80 ION 280 IF (mA) 100 0 20 40 60 80 100 160 120 80 40 0 −20 120 Ambient temperature Ta (°C) 0 20 40 60 80 100 120 Ambient temperature Ta (°C) I F – VF 100 Ta = 25°C 50 Forward current IF (mA) 30 10 5 3 1 0.5 0.3 0.1 0.6 0.8 1 1.2 Forward voltage 1.4 VF 1.6 1.8 (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-24 TLP4026G Characteristics curves for 1-form-B RON – Ta IFC – Ta 20 5 ION = 120 mA (mA) t