TLP4202G_07

TLP4202G_07

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP4202G_07 - Telecommunication Measurement Equipment Security Equipment FA - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLP4202G_07 数据手册
TLP4202G TOSHIBA Photocoupler Photorelay TLP4202G Telecommunication Measurement Equipment Security Equipment FA The Toshiba TLP4202G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP package. This 2-form-B (NC) photorelay features a withstanding voltage of 350 V. • • • • • • • • 8-pin SOP (2.54SOP8): Height = 2.1 mm, pitch = 2.54 mm Normally closed (2-form-B) device Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 90 mA (max) On-state resistance: 50 Ω (max) Isolation voltage: 1500 Vrms (min) UL Recognized: UL1577, File No. E67349 JEDEC JEITA 1, 3 : Anode 1 8 2, 4 : Cathode 5 6 7 2 7 8 : Drain D1 : Drain D2 : Drain D3 : Drain D4 Unit: mm Pin Configuration (top view) ― ― 11-10H1 TOSHIBA Weight: 0.2 g (typ.) 3 6 4 5 1 2007-10-01 TLP4202G Absolute Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta > 25°C) = LED Peak forward current (100 μs pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage Detector On-state current On-state current derating (Ta > 25°C) = Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min, R.H. < 60%) = (Note 1) Symbol IF ΔIF/°C IFP VR Tj VOFF ION ΔION/°C Tj Tstg Topr Tsol BVS Rating 50 −0.5 1 5 125 350 90 −0.9 125 −55 to 125 −40 to 85 260 1500 Unit mA mA/°C A V °C V mA mA/°C °C °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. Recommended Operating Conditions Characteristics Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min ⎯ 5 ⎯ −20 Typ. ⎯ ⎯ ⎯ ⎯ Max 280 25 90 65 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage LED Reverse current Capacitance Detector Off-state current Capacitance Symbol VF IR CT IOFF COFF IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 350 V, IF = 5 mA V = 0, f = 1 MHz, IF = 5 mA Test Condition Min 1.0 ⎯ ⎯ ⎯ ⎯ Typ. 1.15 ⎯ 30 ⎯ 30 Max 1.3 10 ⎯ 1 ⎯ Unit V μA pF μA pF 2 2007-10-01 TLP4202G Coupled Electrical Characteristics (Ta = 25°C) Characteristics Trigger LED current Return LED current On-state resistance Symbol IFC IFT RON Test Condition IOFF = 10 μA ION = 90 mA ION = 90 mA Min ⎯ 0.1 ⎯ Typ. 1 ⎯ 27 Max 3 ⎯ 50 Unit mA mA Ω Isolation Characteristics (Ta = 25°C) Characteristics Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. < 60% = AC, 1 min Isolation voltage BVS AC, 1 s, in oil DC, 1 min, in oil Min ⎯ 5 × 10 10 Typ. 0.8 10 14 Max ⎯ ⎯ ⎯ ⎯ ⎯ Unit pF Ω Vrms Vdc 1500 ⎯ ⎯ ⎯ 3000 3000 Switching Characteristics (Ta = 25°C) Characteristics Turn-on time Turn-off time Symbol tON tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA Min ⎯ (Note 2) ⎯ Typ. 0.25 0.5 Max 0.5 1 Unit ms ms Note 2: Switching time test circuit IF 1, 3 6, 8 RL VDD IF VOUT VOUT 10% tON 90% tOFF 2, 4 5, 7 3 2007-10-01 TLP4202G IF – Ta 100 160 ION – Ta Allowable on-state current ION (mA) IF (mA) 80 120 Allowable forward current 60 80 40 40 20 0 −20 0 20 40 60 80 100 120 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IF – V F 100 Ta = 25°C 30 (mA) Forward current IF 10 3 1 0.3 0.1 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward voltage VF (V) 4 2007-10-01 TLP4202G RON – Ta 50 ION = 90 mA 5 ION = 90 mA t
TLP4202G_07
物料型号: - 型号:TLP4202G

器件简介: - TLP4202G是东芝公司生产的一款光继电器,由铝镓砷化物红外发光二极管与光MOSFET组成,封装在SOP8中。这款2表B(NC)光继电器具有350V的耐受电压。

引脚分配: - 引脚1、3:阳极 - 引脚2、4:阴极 - 引脚5:漏极D1 - 引脚6:漏极D2 - 引脚7:漏极D3 - 引脚8:漏极D4

参数特性: - 峰值关断电压:350V(最小值) - 触发LED电流:3mA(最大值) - 导通状态电流:90mA(最大值) - 导通状态电阻:50Ω(最大值) - 隔离电压:1500Vrms(最小值) - UL认证:UL1577,文件编号E67349

功能详解: - TLP4202G光继电器具有高隔离电压和低导通电阻,适用于需要电气隔离的应用场合,如通信、安全设备和工厂自动化等。

应用信息: - 适用于通信、安全设备和工厂自动化等领域。

封装信息: - 封装类型:8pin SOP(2.54SOP8),高度为2.1mm,引脚间距为2.54mm。
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