TLP504A(GB,F)

TLP504A,TLP504A-2 TOSHIBA Photocoupler IRED & Photo-Transistor TLP504A, TLP504A-2 Programmable Controllers AC/DC-Input Module Solid State Relay Unit: mm The TOSHIBA TLP504A and TLP504A-2 consists of a phototransistor optically coupled to an infrared emitting diode. The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A-2 provides four isolated channels in a sixteen plastic DIP package. • Collector-emitter voltage: 55 V (min) • Current transfer ratio: 50% (min) • Isolation voltage: 2500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 Rank GB: 100% (min) , TOSHIBA Weight: 0.54 g (typ.) Pin Configurations (top view) TLP504A TLP504A-2 1 8 1 16 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1, 4 : Anode 2, 3 : Cathode 5, 8 : Emitter 6, 7 : Collector 11-10C4 TOSHIBA 11-20A3 Weight: 1.1 g (typ.) 1, 4, 5, 8 : Anode 2, 3, 6, 7 : Cathode 9, 12, 13, 16 : Emitter 10, 11, 14, 15 : Collector Start of commercial production 1981-01 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP504A,TLP504A-2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Forward current LED Forward current derating Unit TLP504A TLP504A-2 IF 60 50 mA ΔIF/°C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA/°C Pulse forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 100 mW Diode power dissipation derating Junction temperature Detector Rating Symbol ΔPD/°C -1.2 (Ta ≥ 39°C) -1.0 (Ta ≥ 25°C) mW/°C Tj 125 °C Collector-emitter voltage VCEO 55 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW ΔPC/°C -1.5 -1.0 mW/°C Collector power dissipation derating (1 circuit) (Ta ≥ 25°C) Junction temperature Tj 125 °C Storage temperature range Tstg -55 to 150 °C Operating temperature range Topr -55 to 100 °C Lead soldering temperature (10 s) Tsol 260 °C Total package power dissipation RT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C) ΔPT/°C -2.5 -1.5 mW/°C Isolation voltage (AC, 60 s, R.H.≤ 60 %) (Note 1) 2500 BVS Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristicss Supply voltage Symbol Min. Typ. Max. Unit VCC ― 5 24 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Topr -25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP504A,TLP504A-2 Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V — — 10 μA Capacitance CT V = 0 V, f = 1 MHz — 30 — pF Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 55 — — V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 — — V VCE = 24 V — 10 100 nA VCE = 24 V, Ta = 85 °C — 2 50 μA V = 0 V, f = 1 MHz — 10 — pF Min Typ. Max Unit 50 — 600 100 — 600 — 60 — 30 — — IC = 2.4 mA, IF = 8 mA — — 0.4 IC = 0.2 mA, IF = 1 mA — 0.2 — — — 0.4 Min Typ. Max Unit — 0.8 — pF 10 — Ω — — Vrms Collector dark current ICEO Capacitance collector to emitter CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Current transfer ratio Saturated CTR Collector-emitter saturation voltage IC/IF IC/IF(sat) VCE(sat) Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB Rank GB % % V Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Capacitance input to output CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H.≤ 60 % Isolation voltage © 2019 Toshiba Electronic Devices & Storage Corporation BVS AC, 60 s 3 5×10 10 2500 14 2019-06-24 TLP504A,TLP504A-2 Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time tON Storage time ts Turn-off time tOFF Test Condition VCC = 10 V, IC = 2 mA RL = 100 Ω RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Fig.1) Min Typ. Max — 2 — — 3 — — 3 — — 3 — — 2 — — 15 — — 25 — Unit μs μs Fig. 1 Switching time test circuit IF RL IF VCC tS VCE © 2019 Toshiba Electronic Devices & Storage Corporation 4 VCE 4.5V 0.5V tON tOFF VCC 2019-06-24 TLP504A,TLP504A-2 IF – Ta 200 100 80 60 TLP504A TLP504A-2 40 0 -20 160 TLP504A 120 TLP504A-2 80 40 20 0 20 40 Ambient 60 100 80 temperature Ta 0 -20 120 20 Ambient 100 Pulse width ≤ 100μs 3000 0 (°C) IFP – DR 5000 40 60 100 80 temperature Ta 120 (°C) IF – VF Ta = 25°C 50 (mA) Ta = 25°C 1000 500 Forward current IF Allowable pulse forward current IFP (mA) PC – Ta 240 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 120 300 100 50 30 30 10 5 3 1 0.5 0.3 10 10-3 10-2 10-1 100 0.1 0.4 Duty cycle ratio DR 0.6 0.8 1.0 Forward voltage -2.8 (mA) 1000 -2.4 Pulse forward current IFP Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) ΔVF/ΔTa – IF -2.0 -1.6 -1.2 -0.8 -0.4 0.1 0.3 1 Forward 3 10 current IF (mA) VF 1.4 1.6 1.4 1.6 (V) IFP – VFP Pulse width ≤ 10μs 500 Repetitive frequency=100Hz 300 Ta = 25°C 100 50 30 10 5 3 1 0 30 1.2 0.4 0.8 1.0 Pulse forward voltage 1.2 VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-24 TLP504A,TLP504A-2 ICEO – Ta IC – VCE 80 101 10V 5V Collector Collector dark current ICEO (μA) 100 current VCE = 24V 60 50mA IC (mA) Ta = 25°C 10-1 30mA 20mA 40 15mA PC(MAX.) 10mA 20 IF=5mA 0 10-2 0 2 4 8 6 Collector-emitter voltage VCE 10 (V) IC – VCE 10-3 50mA 40 20 80 60 100 120 Ambient temperature Ta (°C) IC – IF 100 Ta = 25°C VCE = 5V VCE = 0.4V 50 20mA 15 10mA 10 5mA IC 0 20 current 10 -4 5 0 0 IF=2mA 0.2 0.4 0.6 0.8 Collector-emitter voltage 10 5 1.0 1.2 VCE 1.4 (V) IC/IF – IF 500 SAMPLE A 300 SAMPLE B 1 SAMPLE A Current transfer ratio IC/IF (%) Collector current IC (mA) 30 3 Ta = 25°C 40mA 30mA Collector (mA) 25 0.5 0.3 0.1 50 SAMPLE B 30 Ta = 25°C VCE = 5V VCE = 0.4V 10 0.05 0.03 0.3 100 1 3 Forward current 10 IF 30 5 0.3 100 (mA) 1 3 10 Forward current IF 30 100 (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-24 TLP504A,TLP504A-2 VCE (sat) – Ta IC – Ta 100 IF = 5mA VCE = 5V 25mA IC = 1mA 50 0.16 30 10mA IC (mA) 0.12 0.08 Collector current Collector-emitter saturation voltage VCE(sat) (V) 0.20 0.04 0 -20 0 Ambient 20 40 60 temperature Ta 80 100 (°C) 5mA 10 5 3 1mA 1 0.5 IF = 0.5mA 0.3 1000 500 300 Switching Time －RL Ta = 25°C 0.1 IF = 16mA -20 0 20 40 60 80 100 Ambient temperature Ta (°C) VCC = 5V Switching time (μs) tOFF 100 50 ts 30 10 5 3 1 1 tON 3 10 Load 30 100 300 resistance RL (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-24 TLP504A,TLP504A-2 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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