TLP504A,TLP504A−2
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP504A,TLP504A−2
Programmable Controllers AC / DC−Input Module Solid State Relay
The TOSHIBA TLP504A and TLP504A−2 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package. • • • • Collector−emitter voltage: 55 V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 2500 Vrms (min.) UL recognized: UL1577, File no. E67349
Unit in mm
TOSHIBA Weight: 0.54 g
11−10C4
Pin Configurations (top view)
TLP504A 1 2 3 4 1, 4 : Anode 2, 3 : Cathode 5, 8 : Emitter 6, 7 : Collector 8 7 6 5 1 2 3 4 5 6 7 8 TLP504A-2 16 15 14 13 12 11 10 9 TOSHIBA Weight: 1.1 g 11−20A3
1, 4, 5, 8 : Anode 2, 3, 6, 7 : Cathode 9, 12, 13, 16 : Emitter 10, 11, 14, 15 : Collector
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Forward current Forward current derating LED Pulse forward current Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Detector Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage Symbol IF ΔIF / °C IFP VR Tj VCEO VECO IC PC ΔPC / °C Tj Tstg Topr Tsol RT ΔPT / °C BVS 250 −2.5 2500 (AC, 1min., R.H.≤ 60%) 150 −1.5 125 −55~150 −55~100 260 (10 s) 150 −1.5 (Note 1) Rating TLP504A 60 −0.7 (Ta ≥ 39°C) TLP504A−2 50 −0.5 (Ta ≥ 25°C) Unit mA mA /°C A V °C V V mA 100 −1.0 mW mW /°C °C °C °C °C mW mW / °C Vrms
1 (100μs pulse, 100pps) 5 125 55 7 50
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.
Recommended Operating Conditions
Characteristics Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. ― ― ― −25 Typ. 5 16 1 ― Max. 24 20 10 85 Unit V mA mA °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Detector Emitter−collector breakdown voltage Collector dark current Capacitance collector to emitter Symbol VF IR CT V(BR) CEO V(BR) ECO ICEO CCE Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA VCE = 24 V VCE = 24 V, Ta = 85°C V = 0, f = 1 MHz Min. 1.0 — — 55 7 — — — Typ. 1.15 — 30 — — 10 2 10 Max. 1.3 10 — — — 100 50 — Unit V μA pF V V nA μA pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB Min. 50 100 — 30 — — — Typ. — — 60 — — 0.2 — Max. 600 600 — — 0.4 — 0.4 V Unit %
Saturated CTR
IC / IF (sat)
%
Collector−emitter saturation voltage
Isolation Characteristics (Ta = 25°C)
Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. — 5×10
10
Typ. 0.8 10
14
Max. — — — — —
Unit pF Ω Vrms Vdc
2500 — —
— 5000 5000
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Switching Characteristics (Ta = 25°C)
Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf ton toff tON ts tOFF RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Fig.1) VCC = 10 V, IC = 2 mA RL = 100Ω Test Condition Min. — — — — — — — Typ. 2 3 3 3 2 15 25 Max. — — — — — — — μs μs Unit
Fig. 1 Switching time test circuit IF VCC VCE IF
RL
tS
VCE 4.5V 0.5V
VCC
tON
tOFF
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120
IF – Ta
240
PC – Ta
Allowable forward current IF (mA)
100
200
Allowable collector power dissipation PC (mW)
80 TLP504A TLP504A-2 40
160
TLP504A
60
120 TLP504A-2 80
20
40
0 -20
0
20
40
60
80
100
120
0 -20
0
20
40
60
80
100
120
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
5000 3000
IFP – DR
Pulse width ≤ 100μs Ta = 25℃
100 50
IF – VF
Ta = 25℃
Allowable pulse forward current IFP (mA)
1000 500 300
IF (mA) Forward current
10-3 3 10-2 3 10
-1
30
10 5 3
100 50 30 10
1 0.5 0.3
3
3
100
Duty cycle ratio DR
0.1 0.4
0.6
0.8
1.0
1.2
1.4
1.6
Forward
voltage VF (V)
ΔVF/ΔTa
Forward voltage temperature coefficient ΔVF /ΔTa (mRV / ℃)
-2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1
– IF
Pulse forward current IFP (mA)
IFP – VFP
1000 Pulse width ≤ 10μs 500 Repetitive frequency=100Hz 300 Ta = 25℃
100 50 30
10 5 3 1 0
0.3
1
3
10
30
0.4
0.8
1.0
1.2
1.4
1.6
Forward
current
IF
(mA)
Pulse forward
voltage
VFP (V)
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ICEO – Ta
80 10
1
IC – VCE
Ta = 25℃
Collector current IC (mA)
60 50mA 30mA 20mA 15mA 10mA
VCE = 24V 10
0
10V 5V
(μA)
40
Collector dark current ICEO
10
-1
PC(MAX.)
IF=5mA
20
0 10
-2
0
2
4
6
8
10
Collector-emitter voltage
VCE (V)
IC – VCE
10
-3
25
50mA
Ta = 25℃ 40mA 30mA 20mA
Collector current IC (mA)
20
10
-4
0
20
40
60
80
100
120
Ambient temperature Ta
(℃)
15
10mA
IC – IF
100 Ta = 25°C VCE = 5V VCE = 0.4V 50 30
10
5mA
5
IF=2mA
0 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
(mA)
10 5
Collector-emitter voltage
VCE (V)
Collector current IC
3
SAMPLE A
500 300 SAMPLE B
IC / IF – IF
Current transfer ratio IC / IF (%)
1 0.5 0.3
SAMPLE A 100 50 SAMPLE B 30
Ta = 25°C VCE = 5V VCE = 0.4V
0.1 0.05 0.03 0.3 1 3 10 30 100
10 5 0.3
1
3
10
30
100
Forward
current
IF (mA)
Forward
current
IF (mA)
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VCE (sat) – Ta
0.20 IF = 5mA IC = 1mA 0.16
IC – Ta
100 25mA 50 30 10mA 5mA 10 5 3 VCE = 5V
Collector-emitter saturation voltage VCE(sat) (V)
0.12
0.08
0.04
0
-20
0
20
40
60
80
100
Collector current IC (mA)
Ambient temperature Ta (℃)
1 0.5 0.3
1mA
IF = 0.5mA
1000 500 300
RL – Switching Time
Ta = 25°C IF = 16mA VCC = 5V 0.1 -20 0 20 40 60 80 100
Ambient temperature
Ta (℃)
tOFF
Switching time (μs)
100 50 30 ts
10 5 3 tON
1 1
3
10
30
100
300
Load
resistance RL (kΩ)
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RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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