TLP521-1_07

TLP521−1,TLP521−2,TLP521−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP521−1,TLP521−2,TLP521−4 Programmable Controllers AC/DC−Input Module Solid State Relay The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521−4 provides four isolated channels in a sixteen plastic DIP package. • • • • Collector−emitter voltage: 55 V (min) Current transfer ratio: 50% (min) Rank GB: 100% (min) Isolation voltage: 2500 Vrms (min) UL recognized made in Japan: UL1577, file No. E67349 made in Thailand: UL1577, file No. E152349 TOSHIBA Weight: 0.26 g 11−5B2 Unit in mm Pin Configurations (top view) TLP521-1 1 2 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 4 3 1 2 3 4 TLP521-2 8 7 6 5 1 2 3 4 5 6 7 8 TLP521-4 16 15 14 13 12 11 10 9 TOSHIBA Weight: 1.1 g 11−20A3 TOSHIBA Weight: 0.54 g 11−10C4 1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector : Anode 1, 3, 5, 7 : Cathode 2, 4, 6, 8 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector 1 2007-10-01 TLP521−1,TLP521−2,TLP521−4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Forward current Forward current derating LED Pulse forward current Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Detector Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage Symbol IF ΔIF /°C IFP VR Tj VCEO VECO IC PC ΔPC /°C Tj Tstg Topr Tsol PT ΔPT /°C BVS 250 −2.5 150 −1.5 125 −55~125 −55~100 260 (10 s) 150 −1.5 (Note 1) TLP521−1 70 −0.93 (Ta ≥ 50°C) TLP521−2 TLP521−4 50 −0.5 (Ta ≥ 25°C) Unit mA mA /°C A V °C V V mA 100 −1.0 mW mW /°C °C °C °C °C mW mW /°C Vrms 1 (100μ pulse, 100pps) 5 125 55 7 50 2500 (AC, 1min., R.H.≤ 60%) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min ― ― ― −25 Typ. 5 16 1 ― Max 24 25 10 85 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP521−1,TLP521−2,TLP521−4 Classi− fication (*1) A Rank Y TLP521 Rank GR Rank BL Rank GB TLP521−2 TLP521−4 A Rank GB Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min 50 50 100 200 100 50 100 Max 600 150 300 600 600 600 600 Blank, Y, Y , G, G , B, B , GB Y, Y ■ ■ ■ ■ ■ Type Marking Of Classification G, G B, B ■ ■ ■ G, G , B, B , GB Blank, GR, BL, GB GR, BL, GB *1: Ex. rank GB: TLP521−1 (GB) (Note): Application type name for certification test, please use standard product type name, i.e. TLP521−1 (GB): TLP521−1, TLP521−2 (GB): TLP521−2 3 2007-10-01 TLP521−1,TLP521−2,TLP521−4 Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Detector Emitter−collector breakdown voltage Collector dark current Capacitance (collector to emitter) Symbol VF IR CT V(BR) CEO V(BR) ECO ICEO CCE Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA VCE = 24 V VCE = 24 V, Ta = 85°C V = 0, f = 1 MHz Min 1.0 — — 55 7 — — — Typ. 1.15 — 30 — — 10 2 10 Max 1.3 10 — — — 100 50 — Unit V μA pF V V nA μA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB MIn 50 100 — 30 — — — Typ. — — 60 — — 0.2 — Max 600 600 — — 0.4 — 0.4 V Unit % Saturated CTR IC / IF (sat) % Collector−emitter saturation voltage Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H.≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min — — 2500 — — Typ. 0.8 10 11 Max — — — — — Unit pF Ω Vrms Vdc — 5000 5000 4 2007-10-01 TLP521−1,TLP521−2,TLP521−4 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf ton toff tON ts tOFF RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA VCC = 10 V IC = 2 mA RL = 100Ω Test Condition Min — — — — — — — Typ. 2 3 3 3 2 15 25 Max — — — — — — — μs μs Unit Fig.1 : SWITCHING IF TIME TEST CIRCUIT IF RL VCC VCE VCE tON tS 4.5V 0.5V tOFF VCC 5 2007-10-01 TLP521−1,TLP521−2,TLP521−4 TLP521-2 TLP521-4 TLP521-1 100 IF – Ta 100 IF – Ta Allowable forward current IF (mA) 60 Allowable forward current IF (mA) 0 20 40 100 80 80 60 40 40 20 20 0 -20 60 80 0 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) TLP521-1 240 PC – Ta 120 TLP521-2 TLP521-4 PC – Ta 200 100 Allowable collector power dissipation PC (mW) Allowable collector power dissipation PC (mW) 160 80 120 60 80 40 40 20 0 -20 0 20 40 60 80 100 0 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) TLP521-1 3000 IFP – DR Pulse width ≤ 100μs Ta = 25°C 3000 TLP521-2 TLP521-4 IFP – DR Pulse width ≤ 100μs Ta = 25°C Allowable pulse forward current IFP (mA) 500 300 Allowable pulse forward current IFP (mA) 10-3 1000 1000 500 300 100 50 30 100 50 30 10 3 3 10-2 3 10-1 3 100 10 3 10-3 3 10-2 3 10-1 3 100 Duty cycle ratio DR Duty cycle ratio DR 6 2007-10-01 TLP521−1,TLP521−2,TLP521−4 100 50 30 IF – VF Ta=25°C -2.8 ΔVF/ΔTa – IF Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) (mA) -2.4 Forward current IF 10 5 3 -2.0 -1.6 1 0.5 0.3 0.1 0.4 -1.2 -0.8 -0.4 0.1 0.6 0.8 1.0 1.2 1.4 1.6 0.3 1 3 10 30 Forward voltage VF (V) Forward current IF (mA) 1000 Pulse width ≤10μs IFP – VFP 10 1 ICEO – Ta (μA) 10V 5V Pulse forward current IFP (mA) 500 Repetitive frequency =100Hz 300 Ta = 25°C 100 50 30 Collector dark current ICEO 10 0 VCE=24V 10 -1 10 -2 10 5 3 1 0 10 -3 10 0.4 0.8 1.2 1.6 2.0 2.4 -4 0 40 80 120 160 Pulse forward voltage VFP (V) Ambient temperature Ta (℃) IC – VCE 80 Ta=25°C 25 50mA IC – VCE 40mA 30mA 20mA Ta=25°C (mA) 60 50mA 30mA 20mA 15mA 10mA 20 IF=5mA PC(MAX.) (mA) Collector current IC 20 Collector current IC 15 40 10mA 10 5mA 5 IF=2mA 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 7 2007-10-01 TLP521−1,TLP521−2,TLP521−4 100 IC – IF Ta = 25°C VCE=5V 50 VCE=0.4V Current transfer ratio IC /IF (%) 30 500 300 Sample A IC/IF – IF 100 Sample 50 30 B Collector current IC (mA) 10 Sample 5 3 Sample 1 0.5 0.3 B A Ta = 25°C VCE=5V VCE=0.4V 10 5 0.3 1 3 10 30 100 Forward current IF (mA) VCE(sat) – Ta 0.20 0.1 IF = 5mA IC = 1mA Collector-emitter saturation voltage VCE(sat) (V) 0.05 0.03 0.3 1 3 10 30 100 0.16 0.12 Forward current IF (mA) 0.08 0.04 0 -20 0 20 40 60 80 100 IC – Ta 100 25mA 50 30 10mA 5mA 10 5 3 Ambient temperature Ta (℃) VCE = 5V 1000 500 300 RL – Switching Time Ta = 25°C IF = 16mA VCC= 5V Collector current IC (mA) tOFF Switching time (μs) 100 50 30 tS 1 0.5 0.3 1mA 10 5 3 IF = 0.5mA tON 0.1 -20 0 20 40 60 80 100 1 1 3 10 30 100 300 Ambient temperature Ta (℃) Load resistance RL (kΩ) 8 2007-10-01 TLP521−1,TLP521−2,TLP521−4 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01