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TLP523

TLP523

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP523 - GaAs Ired & Photo−Transistor - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLP523 数据手册
TLP523,TLP523−2,TLP523−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP523, TLP523−2, TLP523−4 Unit in mm Programmable Controllers DC−Output Module Solid State Relay The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected, phototransistor which has an integral base−emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP523−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP523−4 provide four isolated channels per package. • • • • • Current transfer ratio: 500% (min.) (IF = 1 mA) Isolation voltage: 2500 Vrms (min.) Collector−emitter voltage: 55 V (min.) Leakage current: 10μA (max.) (Ta = 85°C) UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.26 g 11−5B2 Pin Configurations (top view) TLP523 1 2 4 3 1 2 3 4 1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector TLP523-2 8 7 6 5 1 2 3 4 5 6 7 8 TLP523-4 16 TOSHIBA 15 14 13 12 11 10 9 11−10C4 Weight: 0.54 g 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1, 3, 5, 7 : Anode 2, 4, 6, 8 : Cathode 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector TOSHIBA Weight: 1.1 g 11−20A3 1 2007-10-01 TLP523,TLP523−2,TLP523−4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Forward current LED Forward current derating Pulse forward current Reverse voltage Collector−emitter voltage Emitter−collector voltage Detector Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit (Ta ≥ 25°C)) Operating temperature range Storage temperature range Lead soldering temperature (10 s) Total power dissipation Total power dissipation derating (Ta ≥ 25°C) Isolation voltage (Note 1) Symbol IF ΔIF /°C IFP VR VCEO VECO IC PC ΔPC /°C Topr Tstg Tsol PT ΔPT /°C BVS 250 −2.5 150 −1.5 −55~100 −55~125 260 150 −1.5 TLP523 60 −0.7 (Ta ≥ 39°C) TLP523−2 TLP523−4 50 −0.5 (Ta ≥ 25°C) Unit mA mA /°C A V V V mA 100 −1.0 mW mW /°C °C °C °C mW mW /°C Vrms 1 (100μs pulse, 100pps) 5 55 0.3 150 2500 (AC, 1min., R.H.≤ 60%) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Operating temperature range Symbol VCC IF Topr Min. ― ― −25 Typ. 5 16 ― Max. 24 20 85 Unit V mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP523,TLP523−2,TLP523−4 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Detector Collector dark current Capacitance collector to emitter Current transfer ratio Coupled Collector−emitter saturation voltage Capacitance input to output Isolation resistance Symbol VF IR CT V(BR) CEO ICEO CCE IC / IF VCE(sat) CS RS Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 1 m A VCE = 24 V VCE = 24 V, Ta = 85°C V = 0, f = 1 MHz IF = 1 mA, VCE = 1 V IC = 50 mA, IF = 10 mA VS = 0, f = 1 MHz VS = 500 V, R.H.≤ 60% Min. 1.0 — — 55 — — — 500 — — 5×10 10 Typ. 1.15 — 30 — 10 0.5 10 2000 — 0.8 10 14 Max. 1.3 10 — — 200 10 — — 1 — — Unit V μA pF V nA μA pF % V pF Ω Switching Characteristics (Ta = 25°C) Characteristic Turn−on time Turn−off time Symbol tON tOFF Test Condition VCC = 10 V, RL = 180 Ω IF = 16 mA Min. — — Typ. 3 80 Max. — — Unit μs μs Switching Time Test Circuit IF IF RL VCC VCE IF t OFF 9V 1V VCE t ON 3 2007-10-01 TLP523,TLP523−2,TLP523−4 100 IF – Ta 200 PC – Ta Allowable forward current IF (mA) Allowable collector power dissipation PC (mW) 80 TLP523 TLP523 -2, -4 160 TLP523 60 120 TLP523 -2, -4 40 80 20 40 0 -20 0 20 40 60 80 100 120 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (℃) Ambient temperature Ta (℃) 5000 IFP – DR Pulse width ≤ 100μs Ta = 25℃ 100 Ta = 25℃ 50 30 IF – VF Pulse forward current IFP (mA) 3000 1000 500 300 (mA) Forward current IF 10 5 3 100 50 30 10 3 1 0.5 0.3 10-3 3 10-2 3 10 -1 3 100 Duty cycle patio DR 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward voltage VF (V) -3.2 ΔVF / ΔTa – IF 1000 500 IFP – VFP Forward voltage temperature coefficient ΔVF / ΔTa (mV / ℃) -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 Pulse forward current IFP (mA) 300 100 50 30 10 5 3 Pulse width ≤ 10μs Repetitive frequency = 100Hz Ta = 25℃ 0.3 1 3 10 30 1 0.6 1.0 1.4 1.8 2.2 2.6 3 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2007-10-01 TLP523,TLP523−2,TLP523−4 I C – IF 300 I C – IF 300 VCE = 1.2V Ta = 25°C 100 VCE = 1V Ta = 25°C 100 (mA) 50 30 Sample 1 (mA) 50 30 Sample 1 Collector current IC Collector current IC 2 3 10 2 3 10 5 3 5 3 1 0.3 1 3 10 30 1 0.3 1 3 10 30 Forward current IF (mA) Forward current IF (mA) VCE(sat) – Ta Test condition A : IC=100mA, IF=10mA B : IC=50mA, IF=10mA C : IC=10mA, IF=1mA D : IC=1mA, IF=0.5mA Test condition IC – Ta A : IF =10mA, VCE=1.2V B : IF =10mA, VCE=1.0V C : IF =2mA, VCE=1.2V D : IF =2mA, VCE=1.0V E : IF =1mA, VCE=1.2V F : IF =1mA, VCE=1.0V 140 Collector-emitter saturation voltage VCE (sat) (V) 1.6 1.4 Test condition A Collector current IC (mA) 1.2 120 Test condition A B C 1.0 100 B 80 0.8 D 0.6 60 C D 0.4 40 0.2 20 E F 0 -40 -20 0 20 40 60 80 100 0 -40 -20 0 20 40 60 80 100 Ambient temperature Ta (℃) Ambient temperature Ta (℃) 5 2007-10-01 TLP523,TLP523−2,TLP523−4 IC – VCE 500 300 PC Max. Sample 100 2 50 50 1 100 300 IC – VCE IF = 10mA 2mA Ta = 25℃ 1mA (mA) 30 PC Max. 10 5 3 Collector current IC Collector current IC (mA) 3 30 10 5 3 0.5mA 1 0.5 0.3 IF = 1mA Ta = 25℃ 0.1 0.1 0.3 1 3 10 30 1 0.5 0.3 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching Time Ta = 25℃ IF VCC = 10V RL VOUT IF VOUT t 500 ON t OFF 90% 10% 100 500 300 Safe Operating Area 1 s※ 1s※ 10ms※ 10ms※ Switching time (μs) 300 t 100 50 30 t ON(IF=1mA) OFF(IF=10mA) t (mA) Collector current IC 50 30 100ms※ 100ms※ DC operating Ta=25℃ 10 OFF(IF=1mA) 10 5 3 t ON(IF=10mA) 5 ※ 3 Single nonrepetitive pulse Ta=25℃ Ta=60℃ 1 3 10 30 1 30 100 300 1k 3k 10k 1 0 .5 Load resistance RL (Ω) Collector-emitter voltage VCE (V) 6 2007-10-01 TLP523,TLP523−2,TLP523−4 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01
TLP523
物料型号: - TLP523 - TLP523-2 - TLP523-4

器件简介: 东芝TLP523, TLP523-2和TLP523-4由砷化镓红外发射二极管与硅达林顿连接的光电晶体管组成,内部带有基极-发射极电阻,以优化开关速度和高温特性。TLP523-2提供两个隔离通道,TLP523-4提供四个隔离通道。

引脚分配: - 1, 3, 5, 7:阳极 - 2, 4, 6, 8:阴极 - 9, 11, 13, 15:发射极 - 10, 12, 14, 16:集电极

参数特性: - 电流传输比:最小500%(IF=1mA) - 隔离电压:最小2500Vrms - 集电极-发射极电压:最小55V(Ta=85°C)

功能详解: - 该光耦由红外发射二极管和光电晶体管组成,适用于固态继电器等应用。

应用信息: - 适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。

封装信息: - TLP523-2:八引脚塑料DIP封装 - TLP523-4:提供四个隔离通道的封装
TLP523 价格&库存

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TLP523(F)
  •  国内价格
  • 1+34.0977
  • 10+32.83482
  • 100+29.80392
  • 500+28.28846

库存:0