TLP550(F)

TLP550 TOSHIBA Photocoupler IRED & Photo IC TLP550 Microprocessor System Interfaces Digital Logic Ground Isolation Line Receiver Switching Power Supply Feedback Control Transistor Inverter Unit: mm TLP550 consists of a high-output infrared emitting diode and a one chip photo diode− transistor. TLP550 has no base connection, and is suitable for application at noisy environmental condition. This unit is 8−lead DIP package.  Isolation voltage : 2500 Vrms (min)  Propagation delay time (tpHL / tpLH): tpHL = 0.5μs (typ.), tpLH = 0.6μs (typ.) (RL=1.9 kΩ)  TTL compatible TOSHIBA 11−10C4S Weight: 0.54 g (typ.)  UL-recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Pin Configuration (top view) 1 2 8 7 3 6 4 5 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : Emitter 6 : Collector 7 : N.C. 8 : Cathode Schematic ICC 2 VF 3 IF 8 VCC IO 6 5 VO GND Start of commercial production 1981-09 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP550 Current Transfer Ratio Classification Current Transfer Ratio (%) (IC/IF) Min Marking of Classification Max (None) 10 ― Blank, O, Y Rank O 19 ― O Rank Y 35 ― Y Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit (Note 1) IF 25 mA Pulse forward current (Note 2) IFP 50 mA Peak transient forward current (Note 3) IFPT 1 A VR 5 V PD 45 mW Output current IO 8 mA Peak output current IOP 16 mA Supply voltage VCC −0.5 to 15 V Output voltage VO −0.5 to 15 V PO 100 mW Operating temperature range Topr −55 to 100 °C Storage temperature range Tstg −55 to 125 °C Lead solder temperature (10 s) Tsol 260 °C BVS 2500 Vrms LED Forward current Reverse voltage Detector Diode power dissipation (Note 4) Output power dissipation (Note 5) Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 6) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.8mA above 70 °C. (Note 2) 50 % duty cycle, 1 ms pulse width. Derate 1.6 mA / °C above 70 °C. (Note 3) Pulse width 1 μs, 300 pps. (Note 4) Derate 0.9 mW / °C above 70 °C. (Note 5) Derate 2 mW / °C above 70 °C. (Note 6) Device considered two−terminal device: Pins 1, 2, 3 and 4 shorted together and pin 5, 6, 7 and 8 shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP550 Electrical Characteristics (Ta = 25°C) Characteristic Symbol LED Forward voltage Forward voltage temperature coefficient Min Typ. Max Unit VF IF = 16 mA 1.45 1.65 1.85 V ΔVF / ΔTa IF = 16 mA ― −2 ― mV / °C Reverse current IR VR = 5 V ― ― 10 μA Capacitance between terminal CT VF = 0 V, f = 1 MHz ― 60 ― pF IOH (1) IF = 0 mA, VCC = VO = 5.5 V ― 3 500 nA IOH (2) IF = 0 mA, VCC = VO = 15 V ― ― 5 IOH IF = 0 mA, VCC = 15 V VO = 15 V, Ta = 70 °C ― ― 50 High level supply voltage ICCH IF = 0 mA, VCC = 15 V ― 0.01 1 μA Supply voltage VCC ICC = 0.01 mA 15 ― ― V Output voltage VO IO = 0.5 mA 15 ― ― V Min Typ. Max Unit 10 40 ― Rank O 19 40 ― Rank Y 35 50 ― 5 ― ― 15 ― ― ― ― 0.4 V Min Typ. Max Unit ― 0.8 ― pF 5×1010 1014 ― Ω 2500 ― ― Vrms High level output current Detector Test Condition μA Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition IF = 16 mA, VCC = 4.5V, VO = 0.4 V Current transfer ratio IO / IF Low level output voltage VOL IF = 16 mA, VCC = 4.5 V, VO = 0.4 V, Ta = 0 to 70°C Rank O, Y IF = 16 mA, VCC = 4.5 V, IO = 1.1 mA (Rank O: IO = 2.4 mA) % Isolation Characteristics (Ta = 25°C) Characteristics Capacitance (input-output) Symbol (Note 7) CS Test Condition VS = 0 V, f = 1 MHz Resistance (input-output) (Note 7) RS R.H. ≤ 60 %, VS = 1 kVDC Isolation voltage (Note 7) BVS AC, 60 s (Note 7) Device considered two−terminal device: Pins 1, 2, 3 and 4 shorted together and pin 5, 6, 7 and 8 shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-24 TLP550 Switching Characteristics (Ta = 25°C、VCC = 5V) Characteristic Propagation delay time (H→ L) Symbol Test Circuit. Test Condition Min Typ. Max Unit IF = 0→ 16 mA, VCC = 5 V, RL = 4.1 kΩ ― 0.3 0.8 Rank O: RL = 1.9 kΩ ― 0.5 0.8 IF = 16→ 0 mA, VCC = 5 V, RL = 4.1 kΩ ― 1 2 Rank O: RL = 1.9 kΩ ― 0.6 1.2 IF = 0 mA, VCM = 200 Vp−p RL = 4.1 kΩ (rank O: RL = 1.9 kΩ) (Note 8) ― 1500 ― V /μs IF = 16 mA, VCM = 200 Vp−p RL = 4.1 kΩ (rank O: RL = 1.9 kΩ) (Note 8) ― −1500 ― V /μs μs tpHL 1 Propagation delay time (L→ H) tpLH Common mode transient immunity at high output level CMH μs 2 Common mode transient immunity at low output level CML (Note 8) CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VO < 0.8 V). CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (VO > 2.0 V). © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-24 TLP550 Test Circuit 1: Switching Time Test Circuit IF Pulse input 51Ω PW=100μs Duty ratio=1 / 10 IF monitor VCC = 5V 1 8 2 7 3 6 VO 4 5 Output monitor IF 0 RL VO 5V 1.5V 1.5V VOL tpLH tpHL Test Circuit 2: Common Mode Noise Immunity Test Circuit IF VCC=5V 1 8 2 7 3 6 VO 4 5 Output monitor 90% VCM RL tr VO (IF=0mA) VCM VO (IF=16mA) Pulse generator ZO=50Ω CMH = 160(V) t r ( µs) , CML = 10% tf 200V 0V 5V 2V 0.8V VOL 160(V) t f ( µs) © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-24 TLP550 IF – VF (mA) 10 Forward current IF 50 30 3 Ta = 25°C 5 1 0.5 0.3 0.1 0.05 0.03 0.01 1.0 ΔVF / ΔTa – IF −2.6 Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) 100 1.4 1.2 1.6 Forward voltage VF −2.2 −2.0 −1.8 −1.6 −1.4 0.1 2.0 1.8 −2.4 0.3 0.5 1 3 Forward current (V) 30 (mA) lO – I F IOH (1) – Ta 10 300 Output current IO (mA) 100 High level output current IOH (μA) IF 10 5 50 30 10 5 3 VCC = 5V 5 VO = 0.4V 3 Ta = 25°C 1 0.5 0.3 0.1 0.05 0.03 1 0.6 0 40 80 120 0.01 0.1 160 0.3 0.5 1 10 IF 30 50 100 300 (mA) IO / IF – Ta IO / IF – IF 1.2 VCC = 5V VO = 0.4V 50 1.0 30 IO / IF Ta = –25°C 25°C 10 100°C Normalized Current transfer ratio IO / IF (%) 5 Forward current Ambient temperature Ta (°C) 100 3 5 0.8 0.6 Normalized To : 0.4 IF = 16mA VCC = 4.5V 3 VO = 0.4V 0.2 Ta = 25°C 1 0.3 0.5 1 3 Forward current 5 IF 10 30 0 −40 50 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-24 TLP550 IO – VO VO – IF 5 30mA VCC = 5V Ta = 25°C 10 15mA 4 10mA IF=5mA 2 0 1 2 3 4 Output voltage 5 VO RL (V) VO 20mA 6 0 4 Output voltage Output current IO (mA) 25mA 8 VCC =5V IF 6 VO 3 Ta=25°C 2 3.9kΩ (V) 10kΩ 1 0 7 RL=2kΩ 0 4 8 12 Forward current 16 IF 20 24 (mA) tpHL, tpLH – RL 5 Propagation delay time tpLH, tpHL (μs) 3 IF = 16mA VCC = 5V tpLH Ta = 25°C 1 0.5 0.3 tpHL 0.1 1 3 5 10 30 50 100 Load resistance RL (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-24 TLP550 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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