TLP550

TLP550

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP550 - Line Receiver Feedback Control - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLP550 数据手册
TLP550 TOSHIBA Photocoupler Infrared LED + Photo IC TLP550 Digital Logic Isolation Line Receiver Feedback Control Power Supply Control Switching Power Supply Transistor Inverter TLP550 constructs a high emitting diode and a one chip photo diode− transistor. TLP550 has no base connection, and is suitable for application at noisy environmental condition. This unit is 8−lead DIP package. Isolation voltage: 2500 Vrms (min.) Switching speed: tpHL, tpLH = 0.5μs (typ.)(RL=1.9 kΩ) TTL compatible UL recognized: UL1577, file No. E67349 TOSHIBA 11−10C4 Weight: 0.54 g (typ.) Unit in mm Pin Configuration (top view) 1 2 3 4 8 7 6 5 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : Emitter 6 : Collector 7 : N.C. 8 : Cathode Schematic ICC IF 2 VF 3 IO 6 5 VO VCC 8 GND 1 2007-10-01 TLP550 Current Transfer Ratio Classification (None) Rank O Rank Y Current Transfer Ratio (%) (IC/IF) MIN MAX 10 19 35 ― ― ― Marking of Classification Blank, O, Y O Y Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Pulse forward current LED Peak transient forward current Reverse voltage Diode power dissipation (Note 4) Output current Peak output current Detector Supply voltage Output voltage Output power dissipation (Note 5) Operating temperature range Storage temperature range Lead solder temperature (10s) Isolation voltage (AC, 1min., R.H. = 40~60%) (Note 6) (Note 1) (Note 2) (Note 3) Symbol IF IFP IFPT VR PD IO IOP VCC VO PO Topr Tstg Tsol BVS Rating 25 50 1 5 45 8 16 −0.5~15 −0.5~15 100 −55~100 −55~125 260 2500 Unit mA mA A V mW mA mA V V mW °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.8mA above 70°C. (Note 2) 50% duty cycle, 1ms pulse width. Derate 1.6mA / °C above 70°C. (Note 3) Pulse width 1μs, 300pps. (Note 4) Derate 0.9mW / °C above 70°C. (Note 5) Derate 2mW / °C above 70°C. 2 2007-10-01 TLP550 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Forward voltage temperature coefficient Reverse current Capacitance between terminal Symbol VF ΔVF /ΔTa IR CT IOH (1) Detector High level output current IOH (2) IOH High level supply voltage ICCH Test condition IF = 16 mA IF = 16 mA VR = 5 V VF = 0, f = 1MHz IF = 0 mA, VCC = VO = 5.5 V IF = 0 mA, VCC = VO = 15 V IF = 0 mA, VCC = VO = 15 V Ta = 70°C IF = 0 mA, VCC = 15 V Ta = 25°C IF = 16 mA VCC = 4.5 V VO = 0.4 V Rank : 0 Rank : Y Ta = 0~70°C Rank : 0, Y Low level output voltage Isolation resistance Capacitance between input to output VOL RS CS IF = 16 mA, VCC = 4.5 V IO = 1.1 mA (rank 0: IO = 2.4mA) R.H. = 40~60%, V = 1kV DC (Note 6) V = 0, f = 1MHz Min. 1.45 ― ― ― ― ― ― ― 10 19 35 5 15 ― Typ. 1.65 −2 ― 60 3 ― ― 0.01 30 30 50 ― ― ― 12 Max. 1.85 ― 10 ― 500 5 50 1 ― ― Unit V mV / °C μA pF nA μA μA μA Current transfer ratio IO / IF % ― ― 0.4 V Coupled ― ― 10 ― ― Ω pF 0.8 Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition IF = 0→ 16 mA, VCC = 5V, RL = 4.1 kΩ tpHL (Note 7) Rank 0: RL = 1.9 kΩ IF = 16→ 0 mA, VCC = 5V, RL = 4.1 kΩ tpLH (Note 7) Rank 0: RL = 1.9 kΩ IF = 0 mA, VCM = 200 Vp−p CMH RL = 4.1 kΩ (rank 0: RL = 1.9 kΩ) (Note 8) IF = 16 mA, VCM = 200 Vp−p CML RL = 4.1 kΩ (rank 0: RL = 1.9 kΩ) (Note 8) ― −1500 ― V /μs ― 1500 ― V /μ s ― 0.6 1.2 ― ― 0.5 1.0 0.8 2.0 μs Min. ― Typ. 0.3 Max. 0.8 μs Unit Propagation delay time (H→ L) Propagation delay time (L→ H) Common mode transient immunity at high output level Common mode transient immunity at low output level (Note 6) Device considered two−terminal device: Pins 1, 2, 3 and 4 shorted together and pin 5, 6, 7 and 8 shorted together. 3 2007-10-01 TLP550 (Note 7) Switching time test circuit. Pulse input IF 1 2 3 4 8 7 6 5 RL VCC=5V IF 0 PW = 100μs Duty ratio = 1 / 10 IF monitor 51Ω VO Output monitor VO 1.5V tpHL tpLH 5V 1.5V VOL (Note 8) Common mode transient immunity test circuit. 1 IF 2 3 4 8 7 6 5 VCM RL VCC=5V VCM tr VO (IF = 0mA) VO (IF = 16mA) 90% 10% tf 200V 0V VO Output monitor 5V 2V 0.8V VOL Pulse gen ZO=50Ω CMH= 160 (V) tf (μs) , CML= 160 (V) tf (μs) (Note 9) Maximum electrostatic discharge voltage for any pins: 100V (C = 200pF, R = 0) 4 2007-10-01 TLP550 IF – V F 100 50 30 Ta = 25°C −2.6 ΔVF / ΔTa – IF Forward voltage temperature coefficient ΔVF / ΔTa (mV / ℃) −2.4 (mA) 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1.0 −2.2 Forward current IF −2.0 −1.8 −1.6 1.2 1.4 1.6 1.8 2.0 −1.4 0.1 0.3 0.5 1 3 5 10 30 Forward voltage VF (V) Forward current IF (mA) IOH (1) – Ta 300 10 5 lO – IF VCC = 5V VO = 0.4V Ta = 25°C IOH (μA) 100 50 30 3 (mA) 1 0.5 0.3 High level output current 10 5 3 Output current 0 40 80 120 160 IO 0.1 0.05 0.03 1 0.6 0.01 0.1 0.3 0.5 1 3 5 10 30 50 100 300 Ambient temperature Ta (℃) Forward current IF (mA) IO / IF – IF 100 50 30 VCC = 5V VO = 0.4V 1.0 1.2 IO / IF – Ta Current transfer ratio IO / IF (%) Ta = −25°C 100°C Normalized IO / IF 0.8 10 0.6 Normalized To : IF = 16mA VCC = 4.5V 0.2 VO = 0.4V Ta = 25°C 5 3 25°C 0.4 1 0.3 0.5 1 3 5 10 30 50 0 −40 −20 0 20 40 60 80 100 Forward current IF (mA) Ambient temperature Ta (℃) 5 2007-10-01 TLP550 IO – V O 5 10 30mA VCC = 5V Ta = 25°C 25mA 4 VO – IF IF (V) VCC = 5V (mA) 8 20mA 6 15mA RL VO Output voltage VO Output current IO 3 Ta=25°C 2 RL=2kΩ 3.9kΩ 1 10kΩ 4 10mA 2 IF=5mA 0 0 0 1 2 3 4 5 6 7 0 4 8 12 16 20 24 Output voltage VO (V) Forward current IF (mA) tpHL, tpLH – RL 5 3 IF = 16mA VCC = 5V Ta = 25°C tpLH Propagation delay time tpLH, tpHL (μs) 1 0.5 0.3 tpHL 0.1 1 3 5 10 30 50 100 Load resistance RL (kΩ) 6 2007-10-01 TLP550 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01
TLP550
物料型号: - 型号:TLP550

器件简介: - TLP550是一款由东芝公司生产的光耦器件,集成了一个红外发光二极管和一个光敏晶体管。由于没有基极连接,适用于噪声环境条件,采用8引脚DIP封装。

引脚分配: - 1: N.C.(无连接) - 2: 阳极(Anode) - 3: 阴极(Cathode) - 4: N.C.(无连接) - 5: 发射极(Emitter) - 6: 集电极(Collector) - 7: N.C.(无连接) - 8: 阴极(Cathode)

参数特性: - 隔离电压:2500 Vrms(最小值) - 开关速度:tpHL, TTL兼容,典型值0.5μs(RL=1.9 kΩ) - 重量:0.54g(典型值)

功能详解: - TLP550具有数字逻辑隔离功能,可用于线接收反馈控制、电源控制、开关电源、晶体管逆变器等应用。

应用信息: - TLP550适用于需要电气隔离的各种应用,如工业控制系统、医疗设备、通信设备等。

封装信息: - 封装类型:8引脚DIP封装
TLP550 价格&库存

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