TLP559(F)

TLP559 TOSHIBA Photocoupler IRED & Photo IC TLP559 Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Transistor Inverter Unit: mm The TOSHIBA TLP559 consists of a high−output infrared emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8−lead DIP package. TLP559 has no internal base connection, and a Faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity. So this is suitable for application in noisy environmental condition. • Isolation voltage: 2500 Vrms (min) • Switching speed: tpHL = 0.2μs (typ.) tpLH = 0.3μs (typ.) (RL = 1.9kΩ) TOSHIBA 11−10C4S Weight: 0.54 g (typ.) • TTL compatible • UL-recognized: UL 1577, File No.E67349. • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349. Pin Configuration (top view) 8 1 2 7 3 6 4 5 Shield 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : Emitter 6 : Collector 7 : N.C. 8 : VCC Schematic ICC 2 VF IF 8 VCC IO 3 6 Shield 5 VO GND Start of commercial production 1987-09 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP559 Absolute Maximum Ratings (Ta = 25°C) LED Characteristic Symbol Rating Unit Forward current (Note 1) IF 25 mA Pulse forward current (Note 2) IFP 50 mA Peak transient forward current (Note 3) IFPT 1 A VR 5 V Reverse voltage PD 45 mW Output current IO 8 mA Peak output current IOP 16 mA Output voltage VO −0.5 to 15 V Supply voltage VCC −0.5 to 15 V PO 100 mW Operating temperature range Topr −55 to 100 °C Storage temperature range Tstg −55 to 125 °C Detector Diode power dissipation (Note 4) Output power dissipation (Note 5) Lead solder temperature (10 s) (Note 6) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 7) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.8mA above 70 °C. (Note 2) 50 % duty cycle,1 ms pulse width.Derate 1.6 mA / °C above 70 °C. (Note 3) Pulse width ≤ 1μs, 300 pps. (Note 4) Derate 0.9 mW / °C above 70 °C. (Note 5) Derate 2 mW / °C above 70 °C. (Note 6) Soldering portion of lead: up to 2 mm from body of the devise. (Note 7) Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP559 Electrical Characteristics (Ta = 25°C) Characteristic Symbol LED Typ. Max Unit IF = 16 mA ― 1.65 1.85 V ΔVF / ΔTa IF = 16 mA ― −2 ― mV / °C Reverse current IR VR = 5 V ― ― 10 μA Capacitance between terminal CT VF = 0 V, f = 1 MHz ― 45 ― pF IOH (1) IF = 0 mA, VCC = VO = 5.5 V ― 3 500 nA IOH (2) IF = 0 mA, VCC = VO = 15 V ― ― 5 IOH IF = 0 mA, VCC = 15 V VO = 15 V, Ta = 70 °C ― ― 50 High level supply voltage ICCH IF = 0 mA, VCC = 15 V ― 0.01 1 μA Supply voltage VCC ICC = 0.01 mA 15 ― ― V Output voltage VO IO = 0.5 mA 15 ― ― V Min Typ. Max Unit IF = 16 mA, VCC = 4.5 V, VO = 0.4 V 20 40 ― IF = 16 mA, VCC = 4.5 V, VO = 0.4 V, Ta = 0 to 70 °C 15 ― ― IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA ― ― 0.4 V Min Typ. Max Unit ― 0.8 ― pF High level output current Detector Min VF Forward voltage Forward voltage temperature coefficient Test Condition μA Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Current transfer ratio IO/IF Low level output voltage VOL Test Condition % Isolation Characteristics (Ta = 25°C) Characteristics Capacitance (input-output) Resistance (input-output) Isolation voltage Symbol (Note 7) (Note 7) (Note 7) Test Condition CS VS = 0 V, f = 1 MHz RS R.H. ≤ 60 %, VS = 500 VDC 5× 1010 1014 ― Ω BVS AC, 60 s 2500 ― ― Vrms Min Typ. Max Unit ― 0.2 0.8 μs ― 0.3 0.8 μs IF = 0 mA, VCM = 400 Vp−p RL = 4.1 kΩ 2000 10000 ― V / μs IF =16 mA, VCM = 400 Vp−p RL = 4.1kΩ −2000 −10000 ― V / μs Switching Characteristics (Ta = 25°C、VCC = 5V) Characteristic Propagation delay time Symbol (H→ L) tpHL (L→ H) tpLH Common mode transient immunity at logic high output (Note 8) CMH Common mode transient immunity at logic high output (Note 8) CML Propagation delay time Test Circuit 1 2 Test Condition IF = 16 mA, RL = 1.9 kΩ (Note 8) CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VO < 0.8 V). CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (VO > 2.0 V). © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-24 TLP559 Test Circuit 1: Switching Time Test Circuit IF Pulse input 51Ω PW=100μs Duty ratio=1 / 10 IF monitor VCC = 5V 1 8 2 7 3 6 VO 4 5 Output monitor IF 0 RL VO 5V 1.5V 1.5V VOL tpLH tpHL Test Circuit 2: Common Mode Noise Immunity Test Circuit IF VCC=5V 1 8 2 7 3 6 VO 4 5 Output monitor 90% VCM RL 10% tr VO (IF=0mA) VCM VO (IF=16mA) Pulse generator ZO=50Ω tf 400V 0V 5V 2V 0.8V VOL 320(V) 320(V) CMH = , CML = t r (µs) t f (µs) © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-24 TLP559 IF – VF (mA) 10 Forward current IF 50 30 3 5 1 0.5 0.3 0.1 0.05 0.03 0.01 1.0 ΔVF / ΔTa – IF −2.6 Ta = 25°C Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) 100 1.4 1.2 1.6 Forward voltage VF −2.2 −2.0 −1.8 −1.6 −1.4 0.1 2.0 1.8 −2.4 0.3 0.5 1 3 Forward current (V) 30 (mA) lO – I F IOH (1) – Ta 10 300 Output current IO (mA) 100 High level output current IOH (μA) IF 10 5 50 30 10 5 3 VCC = 5V 5 VO = 0.4V 3 Ta = 25°C 1 0.5 0.3 0.1 0.05 0.03 1 0.6 0 40 80 120 0.01 0.1 160 0.3 0.5 1 10 IF 30 50 100 300 (mA) IO / IF – Ta IO / IF – IF 1.2 VCC = 5V VO = 0.4V 50 1.0 30 IO / IF Ta = –25°C 25°C 10 100°C Normalized Current transfer ratio IO / IF (%) 5 Forward current Ambient temperature Ta (°C) 100 3 5 0.8 0.6 Normalized To : 0.4 IF = 16mA VCC = 4.5V 3 VO = 0.4V 0.2 Ta = 25°C 1 0.3 0.5 1 3 Forward current 5 10 IF (mA) 30 0 −40 50 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-24 TLP559 IO – VO VO – IF 5 30mA VCC = 5V Ta = 25°C 10 15mA 4 10mA IF=5mA 2 0 1 2 3 4 Output voltage 5 VO RL (V) VO 20mA 6 0 4 Output voltage Output current IO (mA) 25mA 8 VCC =5V IF 6 VO 3 Ta=25°C 2 3.9kΩ (V) 10kΩ 1 0 7 RL=2kΩ 0 4 8 12 Forward current 16 IF 20 24 (mA) tpHL, tpLH – RL 5 Propagation delay time tpLH, tpHL (μs) 3 IF = 16mA VCC = 5V Ta = 25°C tpLH 1 0.5 0.3 tpHL 0.1 1 3 5 10 30 50 100 Load resistance RL (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-24 TLP559 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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