TLP559(IGM,F)

TLP559(IGM) TOSHIBA Photocoupler IRED & Photo IC TLP559(IGM) Transistor Inverters Air Conditioner Inverters Line Receivers Intelligent Power Modules (IPMs) Interfaces Unit: mm The TOSHIBA TLP559(IGM) consists of a high-output infrared emitting diode optically coupled to a high-speed photodiode with a transistor amplifier. The TLP559(IGM) has no internal base connection. The Faraday shield in the photodetector chip provides an effective common-mode noise transient immunity. The TLP559(IGM) guarantees minimum and maximum propagation delay time, a relative time difference between the rise and fall time, and commonmode transient immunity. Therefore, the TLP559(IGM) is suitable for an isolation interface between an Intelligent Power Module (IPM) and a control IC in motor control applications.  Isolation Voltage: 2500 Vrms (min)  Common-Mode Transient Immunity: ±10 kV/μs (min) @VCM = 1500 Vp−p  Switching Time: tpHL, tpLH = 0.1μs (min), = 0.8μs (max) TOSHIBA 11−10C4S Weight: 0.54 g (typ.) @IF = 10 mA, VCC = 15 V, RL = 20 kΩ, Ta = 25°C  Switching Time Dispersion: 0.7 μs (max) (|tpLH−tpHL|)  TTL Compatible  UL-recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Pin Configuration (Top view) Schematic 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: Emitter (GND) 6: Collector (Output) 7: N.C. 8: VCC Start of commercial production 1995-01 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP559(IGM) Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT (Note 1) IF 25 mA Pulse Forward Current (Note 2) IFP 50 mA Peak Transient Forward Current (Note 3) IFPT 1 A VR 5 V PD 45 mW Output Current IO 8 mA Peak Output Current IOP 16 mA Output Voltage VO −0.5 to 20 V Supply Voltage VCC −0.5 to 30 V PO 100 mW Operating Temperature Range Topr −55 to 100 °C Storage Temperature Range Tstg −55 to 125 °C LED Forward Current Reverse Voltage DETECTOR Diode Power Dissipation (Note 4) Output Power Dissipation (Note 5) Lead Solder Temperature(10 s) (Note 6) Tsol 260 °C Isolation Voltage(AC, 60 s, R.H.≤60 %) (Note 7) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.8 mA above 70 °C. (Note 2) 50 % duty cycle, 1 ms pulse width. Derate 1.6 mA/°C above 70 °C. (Note 3) Pulse width PW ≤ 1μs, 300 pps. (Note 4) Derate 0.9 mW/°C above 70°C. (Note 5) Derate 2 mW/°C above 70°C. (Note 6) Soldering portion of lead : up to 2mm from the body of the device. (Note 7) Device considers a two-terminal device : pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP559(IGM) Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL LED DETECTOR MIN TYP. MAX UNIT VF IF = 16 mA ― 1.65 1.85 V ∆VF /∆Ta IF = 16 mA ― −2 ― mV /°C Forward Voltage Forward Voltage Temperature Coefficient TEST CONDITION Reverse Current IR VR = 5 V ― ― 10 μA Capacitance between Terminal CT V = 0 V, f = 1 MHz ― 45 ― pF IOH (1) IF = 0 mA, VCC = VO = 5.5 V ― 3 500 nA IOH (2) IF = 0 mA, VCC = 30 V VO = 20 V ― ― 5 IOH IF = 0 mA, VCC = 30 V VO = 20 V, Ta = 70 °C ― ― 50 High Level Supply Voltage ICCH IF = 0 mA, VCC = 30 V ― 0.01 1 μA Supply Voltage VCC ICC = 0.01 mA 30 ― ― V Output Voltage VO IO = 0.5 mA 20 ― ― V MIN TYP. MAX UNIT IF = 10 mA, VCC = 4.5 V VO = 0.4 V 25 35 75 IF = 10 mA, VCC = 4.5 V VO = 0.4 V, Ta = −25 to 100 °C 15 ― ― IF = 16 mA, VCC = 4.5 V IO = 2.4 mA ― ― 0.4 V MIN TYP. MAX UNIT ― 0.8 ― pF 1014 ― Ω ― ― Vrms High Level Output Current μA Coupled Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL Current Transfer Ratio IO / IF Low Level Output Voltage VOL TEST CONDITION % Isolation Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Capacitance Input to Output CS V = 0 V, f = 1 MHz (Note 7) Isolation Resistance RS R.H. ≤ 60 %, VS = 500 V (Note 7) 5×1010 Isolation Voltage BVS AC, 60 s © 2019 Toshiba Electronic Devices & Storage Corporation 3 (Note 7) 2500 2019-06-24 TLP559(IGM) Switching Characteristics (Ta = 25°C, VCC = 15 V) CHARACTERISTIC SYMBOL Propagation Delay Time (H→L) Propagation Delay Time (L→H) TEST CIRCUIT tpHL tpLH 1 Switching Time Dispersion between ON and OFF Common Mode Transient Immunity at Logic High Output Common Mode Transient Immunity at Logic Low Output (Note 8) (Note 8) (Note 8) |tpLH−tpHL| CMH 2 CML TEST CONDITION MIN TYP. MAX UNIT IF = 10 mA, RL = 20 kΩ 0.1 0.45 0.8 IF = 10 mA, RL = 20 kΩ Ta = 0 to 85 °C 0.1 0.45 0.9 IF = 10 mA, RL = 20 kΩ Ta = −25 to 100 °C 0.1 0.45 1.0 IF = 10 mA, RL = 20 kΩ ― 0.25 0.7 IF = 10 mA, RL = 20 kΩ Ta = 0 to 85 °C ― 0.25 0.8 IF = 20 mA, RL = 20 kΩ Ta = −25 to 100 °C ― 0.25 0.9 IF = 0 mA, VCM = 1500 Vp−p, RL = 20 kΩ 10000 15000 ― V /μs IF =10 mA, VCM = 1500 Vp−p, RL = 20 kΩ −10000 −15000 ― V /μs μs μs CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state(Vo4 V). Test Circuit 1: Switching time test circuit Test Circuit 2: Common mode noise immunity test circuit CMH = 1200( V ) 1200( V ) 、CML = t r (µs ) t f (µs ) © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-24 TLP559(IGM) RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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