TLP561J_07

TLP561J TOSHIBA Photocoupler GaAs IRed & Photo−Triac TLP561J Triac Driver Programmable Controllers AC−Output Module Solid State Relay Unit in mm The TOSHIBA TLP561J consists of a zero voltage crossing turn−on photo−triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. • • • • • • Peak off−state voltage: 600V(min.) On−state current: 100mA(max.) Isolation voltage: 2500Vrms(min.) UL recognized: UL1577, file no. E67349 Isolation operating voltage: 2500Vac or 300Vdc for isolation Groupe C*1 Trigger LED current Classi− Fication* (IFT7) Standard Trigger LED Current (mA) VT=6V, Ta=25°C Min. ― ― Max. 7 10 T7 T7, blank Marking Of Classification TOSHIBA Weight: 0.39g 11−7A9 Pin Configuration (top view) *Ex. (IFT7); TLP561J(IFT7) (Note ): Application type name for certification test, please use standard product type name, i.e. TLP561J(IFT7): TLP561J *1: According to VDE0110, table 4. 1 2002-09-25 TLP561J Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 53°C) LED Peak forward current (100μs pulse, 100pps) Reverse voltage Junction temperature Off−state output terminal voltage On−state RMS current Detector Ta = 25°C Ta = 70°C Symbol IF ΔIF / °C IFP VR Tj VDRM IT(RMS) ΔIT / °C ITP ITSM Tj Tstg Topr Tsol BVS Rating 50 −0.7 1 5 125 600 100 50 −1.1 2 1.2 115 −55~125 −40~100 260 2500 Unit mA mA / °C A V °C V mA mA / °C A A °C °C °C °C Vrms On−state current derating (Ta ≥ 25°C) Peak on−state current (100μs pulse, 120pps) Peak nonrepetitive surge current (Pw = 10ms, DC = 10%) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Isolation voltage (AC, 1min., R.H. ≤ 60%) Recommended Operating Conditions Characteristic Supply voltage Forward current Peak on−state current Operating temperature Symbol VAC IF ITP Topr Min. ― 15 ― −25 Typ. ― 20 ― ― Max. 240 25 ― 85 Unit Vac mA A °C 2 2002-09-25 TLP561J Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Peak off−state current Peak on−state voltage Detector Holding current Critical rate of rise of off−state voltage Critical rate of rise of commutating voltage Symbol VF IR CT IDRM VTM IH dv / dt dv / dt(c) IF = 10mA VR = 5 V V = 0, f = 1MHz VDRM = 600V ITM = 100mA ― Vin = 240Vrms, Ta = 85°C Vin = 60Vrms, IT = 15mA (Fig.1) (Fig.1) Test Condition Min. 1.0 ― ― ― ― ― 200 ― Typ. 1.15 ― 30 10 1.7 0.6 500 0.2 Max. 1.3 10 ― 1000 3.0 ― ― ― Unit V μA pF nA V mA V / μs V / μs Coupled Electrical Characteristics (Ta = 25°C) Characteristics Trigger LED current Inhibit voltage Leakage in inhibited state Capacitance (input to output) Isolation resistance Symbol IFT VIH IIH CS RS Test Condition VT = 6V, RL = 100Ω IF = Rated IFT IF = Rated IFT VT = Rated VDRM VS = 0, f = 1MHz VS = 500V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. ― ― ― ― 5×10 10 Typ. 5 ― 200 0.8 10 14 Max. 10 50 600 ― ― ― ― ― Unit mA V μA pF Ω Vrms Vdc 2500 ― ― ― 5000 5000 Fig.1: dv / dt test circuit 3 2002-09-25 TLP561J 4 2002-09-25 TLP561J 5 2002-09-25 TLP561J RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2002-09-25