TLP5751
Photocouplers
Infrared LED & Photo IC
TLP5751
1. Applications
•
Induction Cooktop and Home Appliances
•
Industrial Inverters
•
Air Conditioner Inverters
•
MOSFET Gate Drivers
•
IGBT Gate Drivers
2. General
The TLP5751 consists of an infrared LED and integrated high-gain, high-speed photodetector and is house in
the 6-pin SO6L package.
The TLP5751 is 50 % smaller than the 8-pin DIP package and meets the reinforced insulation class requirements
of international safety standards.
Therefore the mounting area can be reduced in equipment requiring the safety standard certification.
The TLP5751 has an internal faraday shield that provides a guaranteed common-mode transient immunity of
±35 kV/µs.
In particular, the TLP5751 has rail to rail output, and this enables stable operation and better switching
performance in system.
3. Features
(1)
Buffer logic type (totem pole output)
(2)
Output peak current: ± 1.0 A (max)
(3)
Operating temperature: -40 to 110
(4)
Supply current: 3.0 mA (max)
(5)
Supply voltage: 15 to 30 V
(6)
Threshold input current: 4 mA (max)
(7)
Propagation delay time: 150 ns (max)
(8)
Common-mode transient immunity: ±35 kV/µs (min)
(9)
Isolation voltage: 5000 Vrms (min)
(10) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (D4)
(D4).
Start of commercial production
©2016-2019
Toshiba Electronic Devices & Storage Corporation
1
2014-06
2019-12-10
Rev.10.0
TLP5751
4. Packaging (Note)
TLP5751
TLP5751(LF4)
11-4N1A
Note:
11-4N101A
Lead forming option: (LF4)
5. Pin Assignment
1: Anode
2: N.C.
3: Cathode
4: GND
5: VO (Output)
6: VCC
6. Internal Circuit (Note)
Note:
A 1-µF bypass capacitor must be connected between pin 6 and pin 4.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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2019-12-10
Rev.10.0
TLP5751
7. Principle of Operation
7.1. Truth Table
Input
LED
M1
M2
Output
H
ON
ON
OFF
H
L
OFF
OFF
ON
L
7.2. Mechanical Parameters
Characteristics
Size
Unit
Height
2.3 (max)
mm
Creepage distances
8.0 (min)
Clearance distances
8.0 (min)
Internal isolation thickness
0.4 (min)
8. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
LED
Symbol
Input forward current
Input forward current derating
IF
(Ta ≥ 105 )
Peak transient input forward
current
Peak transient input forward
current derating
Note
∆IF/∆Ta
IFPT
(Ta ≥ 85 )
(Note 1)
∆IFPT/∆Ta
Rating
Unit
20
mA
-1
mA/
1
A
-25
mA/
Input reverse voltage
VR
5
V
Input power dissipation
PD
40
mW
∆PD/∆Ta
-1.0
mW/
Tj
125
A
Input power dissipation
derating
(Ta ≥ 85 )
Junction temperature
Detector Peak high-level output current
Peak low-level output current
(Ta = -40 to 110 )
IOPH
(Note 2)
-1.0
(Ta = -40 to 110 )
IOPL
(Note 2)
+1.0
Output voltage
VO
35
Supply voltage
VCC
35
Output power dissipation
Output power dissipation
derating
(Ta ≥ 85 )
Junction temperature
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
V
PO
450
mW
∆PO/∆Ta
-4.5
mW/
Tj
125
Topr
-40 to 110
Tstg
-55 to 125
(10 s)
Tsol
(Note 3)
260
AC, 60 s, R.H. ≤ 60 %
BVS
(Note 4)
5000
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 1 µs, 300 pps
Note 2: Exponential waveform. Pulse width ≤ 2 µs, f ≤ 15 kHz
Note 3: ≥ 2 mm below seating plane.
Note 4: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
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Toshiba Electronic Devices & Storage Corporation
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Rev.10.0
TLP5751
9. Recommended Operating Conditions (Note)
Characteristics
Symbol
Note
Min
Typ.
Input on-state current
IF(ON)
(Note 1)
6
Input off-state voltage
VF(OFF)
0
15
30
-1.0
+1.0
50
Supply voltage
VCC
Peak high-level output current
IOPH
Peak low-level output current
IOPL
Operating frequency
f
(Note 2)
(Note 3)
Max
Unit
15
mA
0.8
V
A
kHz
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
Note: A ceramic capacitor (1 µF) should be connected between pin 6 (VCC) and pin 4 (GND) to stabilize the operation
of a high-gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor
should be placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5 µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note 3: Exponential waveform. IOPH ≥ -1.0 A (≤ 90 ns), IOPL ≤ 1.0 A (≤ 90 ns), Ta = 110
10. Electrical Characteristics (Note) (Unless otherwise specified, Ta = -40 to 110 )
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Symbol
Note
Test
Circuit
VF
∆VF/∆Ta
Test Condition
Min
Typ.
Max
Unit
IF = 10 mA, Ta = 25
1.45
1.55
1.70
V
IF = 10 mA
-1.8
mV/
Input reverse current
IR
VR = 5 V, Ta = 25
10
µA
Input capacitance
Ct
V = 0 V, f = 1 MHz, Ta = 25
60
pF
IF = 5 mA, VCC = 30 V,
V6-5 = -3.5 V
-0.5
A
IF = 5 mA, VCC = 15 V,
V6-5 = -7 V
-1.0
IF = 0 mA, VCC = 30 V,
V5-4 = 2.5 V
0.5
IF = 0 mA, VCC = 15 V,
V5-4 = 7 V
1.0
Peak high-level output current
Peak low-level output current
IOPH
IOPL
(Note 1)
(Note 1)
Fig.
13.1.1
Fig.
13.1.2
High-level output voltage
VOH
Fig.
13.1.3
IF = 4 mA, VCC = 15 V,
IO = -100 mA
14.7
14.9
Low-level output voltage
VOL
Fig.
13.1.4
VF = 0.8 V, VCC = 15 V,
IO = 100 mA
0.07
0.2
High-level supply current
ICCH
Fig.
13.1.5
IF = 10 mA, VCC = 30 V,
VO = Open
1.8
3.0
Low-level supply current
ICCL
Fig.
13.1.6
IF = 0 mA, VCC = 30 V,
VO = Open
1.7
3.0
Threshold input current (L/H)
IFLH
VCC = 15 V, VO > 1 V
1.4
4
Threshold input voltage (H/L)
VFHL
VCC = 15 V, VO < 1 V
0.8
Supply voltage
VCC
15
30
UVLO threshold voltage
UVLO hysteresis
VUVLO+
IF = 5 mA, VO > 2.5 V
12.1
12.7
13.5
VUVLO-
IF = 5 mA, VO < 2.5 V
11.1
11.7
12.4
1.0
UVLOHYS
V
mA
V
Note:
Note:
All typical values are at Ta = 25 .
This device is designed for low power consumption, making it more sensitive to ESD than its predecessors.
Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems.
Note 1: IO application time ≤ 50 µs; single pulse.
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Toshiba Electronic Devices & Storage Corporation
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2019-12-10
Rev.10.0
TLP5751
11. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Test Conditions
Min
Typ.
Max
Unit
1.0
pF
Total capacitance (input to
output)
CS
(Note 1) VS = 0 V, f = 1 MHz
Isolation resistance
RS
(Note 1) VS = 500 V, R.H. ≤ 60 %
1012
1014
Ω
(Note 1) AC, 60 s
5000
Vrms
Isolation voltage
BVS
Note 1: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
12. Switching Characteristics (Note) (Unless otherwise specified, Ta = -40 to 110 )
Characteristics
Symbol
Note
Propagation delay time
(L/H)
tpLH
(Note 1)
Propagation delay time
(H/L)
tpHL
Test
Circuit
Fig.
13.1.7
Test Condition
Min
Typ.
Max
Unit
IF = 0 → 10 mA, VCC = 30 V,
Rg = 10 Ω, Cg = 25 nF
50
150
ns
IF = 10 → 0 mA, VCC = 30 V,
Rg = 10 Ω, Cg = 25 nF
50
150
Rise time
tr
(Note 1)
IF = 0 → 10 mA, VCC = 30 V,
Rg = 10 Ω, Cg = 25 nF
15
Fall time
tf
(Note 1)
IF = 10 → 0 mA, VCC = 30 V,
Rg = 10 Ω, Cg = 25 nF
8
|tpHL-tpLH|
(Note 1)
50
tpsk
(Note 1),
(Note 2)
IF = 0 ←→ 10 mA, VCC = 30 V,
Rg = 10 Ω, Cg = 25 nF
-80
80
High-level common-mode
transient immunity
CMH
(Note 3)
VCM = 1000 Vp-p, IF = 5 mA,
VCC = 30 V, Ta = 25 ,
VO(min) = 26 V
±35
±40
Low-level common-mode
transient immunity
CML
(Note 4)
VCM = 1000 Vp-p, IF = 0 mA,
VCC = 30 V, Ta = 25 ,
VO(max) = 1 V
±35
±40
Pulse width distortion
Propagation delay skew
(device to device)
Fig.
13.1.8
kV/µs
Note: All typical values are at Ta = 25 .
Note 1: Input signal (f = 25 kHz, duty = 50 %, tr = tf = 5 ns or less).
CL is less than 15 pF which includes probe and stray wiring capacitance.
Note 2: The propagation delay skew, tpsk, is equal to the magnitude of the worst-case difference in tpHL and/or tpLH
that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc).
Note 3: CMH is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in
the logic high state (VO > 26 V).
Note 4: CML is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage
in the logic low state (VO < 1 V).
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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2019-12-10
Rev.10.0
TLP5751
13. Test Circuits and Characteristics Curves
13.1. Test Circuits
Fig. 13.1.1 IOPH Test Circuit
Fig. 13.1.2 IOPL Test Circuit
Fig. 13.1.3 VOH Test Circuit
Fig. 13.1.4 VOL Test Circuit
Fig. 13.1.5 ICCH Test Circuit
Fig. 13.1.6 ICCL Test Circuit
Fig. 13.1.7 Switching Time Test Circuit and Waveform
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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2019-12-10
Rev.10.0
TLP5751
Fig. 13.1.8 Common-Mode Transient Immunity Test Circuit and Waveform
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Toshiba Electronic Devices & Storage Corporation
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2019-12-10
Rev.10.0
TLP5751
13.2. Characteristics Curves (Note)
Fig. 13.2.1 IF - VF
Fig. 13.2.2 IF - Ta
Fig. 13.2.3 PO - Ta
Fig. 13.2.4 IFLH - Ta
Fig. 13.2.5 ICCL - Ta
Fig. 13.2.6 ICCH - Ta
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Toshiba Electronic Devices & Storage Corporation
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Rev.10.0
TLP5751
Fig. 13.2.7 VOL - Ta
Fig. 13.2.8 VOH - Ta
Fig. 13.2.9 VOL - IOPL
Fig. 13.2.10 (VOH-VCC) - IOPH
Fig. 13.2.11 tpLH,tpHL,|tpHL-tpLH| - Ta
Fig. 13.2.12 tpLH,tpHL,|tpHL-tpLH| - IF
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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Rev.10.0
TLP5751
Fig. 13.2.13 tpLH,tpHL,|tpHL-tpLH| - VCC
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
10
2019-12-10
Rev.10.0
TLP5751
14. Soldering and Storage
14.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
•
When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig. 14.1.1 An example of a temperature profile when lead(Pb)-free solder is used
•
When using soldering flow
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
•
When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
14.2. Precautions for General Storage
•
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
•
Follow the precautions printed on the packing label of the device for transportation and storage.
•
Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,
respectively.
•
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
•
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
•
When restoring devices after removal from their packing, use anti-static containers.
•
Do not allow loads to be applied directly to devices while they are in storage.
•
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
11
2019-12-10
Rev.10.0
TLP5751
15. Land Pattern Dimensions (for reference only)
Unit: mm
TLP5751
TLP5751(LF4)
Fig. 15.1 Lead Forming Option (standard)
Fig. 15.2 Lead Forming Option (LF4)
16. Marking
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TLP5751
17. EN 60747-5-5 Option (D4) Specification
•
Part number: TLP5751 (Note 1)
•
The following part naming conventions are used for the devices that have been qualified according to
option (D4) of EN 60747.
Example: TLP5751(D4-TP,E
D4: EN 60747 option
TP: Tape type
E: [[G]]/RoHS COMPATIBLE (Note 2)
Note 1: Use TOSHIBA standard type number for safety standard application.
e.g., TLP5751(D4-TP,E → TLP5751
Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Fig. 17.1 EN 60747 Insulation Characteristics
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TLP5751
Fig. 17.2 Insulation Related Specifications (Note)
Note:
This photocoupler is suitable for safe electrical isolation only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
Fig. 17.3 Marking on Packing
Fig. 17.4 Marking Example (Note)
Note:
The above marking is applied to the photocouplers that have been qualified according to option (D4) of EN 60747.
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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TLP5751
Fig. 17.5 Measurement Procedure
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TLP5751
18. Ordering Information (Example of Item Name)
Item Name
Packaging
VDE Option
Packing (MOQ)
TLP5751(E
Magazine (125 pcs)
TLP5751(TP,E
Tape and reel (1500 pcs)
TLP5751(D4,E
EN 60747-5-5
Magazine (125 pcs)
TLP5751(D4-TP,E
EN 60747-5-5
Tape and reel (1500 pcs)
TLP5751(LF4,E
LF4, Wide forming
Magazine (125 pcs)
TLP5751(TP4,E
LF4, Wide forming
TLP5751(D4-LF4,E
LF4, Wide forming
EN 60747-5-5
Magazine (125 pcs)
TLP5751(D4-TP4,E
LF4, Wide forming
EN 60747-5-5
Tape and reel (1500 pcs)
Tape and reel (1500 pcs)
Package Dimensions
Unit: mm
TLP5751
Weight: 0.126 g (typ.)
Package Name(s)
TOSHIBA: 11-4N1A
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Toshiba Electronic Devices & Storage Corporation
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Rev.10.0
TLP5751
Package Dimensions
Unit: mm
TLP5751(LF4)
Weight: 0.126 g (typ.)
Package Name(s)
TOSHIBA: 11-4N101A
©2016-2019
Toshiba Electronic Devices & Storage Corporation
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2019-12-10
Rev.10.0
TLP5751
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA".
Hardware, software and systems described in this document are collectively referred to as "Product".
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's
written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE").
Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in
nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, and devices related to power plant.
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For details, please contact your TOSHIBA sales representative or contact us via our website.
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PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor.
Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products
(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and
regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all
applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
https://toshiba.semicon-storage.com/
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2019-12-10
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