TLP590B

TLP590B TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array TLP590B Telecommunication Programmable Controllers Mos Gate Driver MOS FET Gate Driver The TOSHIBA TLP590B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo− diode array in a six lead plastic DIP package. TLP590B is suitable for MOS FET gate driver. • UL recognized: UL1577, file No. E67349 Unit in mm Short Current Type Name Short Current Classification (min.) C20 Standard 20μA 12μA IF 10mA Marking Of Classification 20 20, blank TLP590B TOSHIBA Weight: 0.39g 11−7A9 (Note) Application type name for certification test, please use standard product type name, i.e. TLP590B(C20): TLP590B Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta ≥ 25°C) LED Pulse forward current (100μs pulse, 100 pps) Reverse voltage Junction temperature Detector Foward current Reverse voltage Junction temperature Symbol IF ΔIF / °C IFP VR Tj IFD VRD Tj Tstg Topr Tsol (Note 1) BVS Rating 50 −0.5 1 3 125 50 10 125 −55~125 −40~85 260 2500 Unit mA mA / °C A V °C μA V °C °C °C °C Vrms Pin Configuration(top view) 1 2 3 1. : Anode 2. : Cathode 3. : NC 4. : Cathode 6. : Anode 4 6 Storage temperature range Operating temperature range Lead soldering temperature (10sec.) Isolation voltage (AC, 1 min., R.H. ≤ 60%) (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4 and 6 shorted together. 1 2002-09-25 TLP590B Recommended Operating Conditions Characteristic Forward current Operating temperature Symbol IF Topr Min. ― −25 Typ. 20 ― Max. 25 85 Unit mA °C Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Forward voltage Detector Reverse current Capacitance (anode to cathode) Symbol VF IR CT VFD IRD CTD Test Condition IF = 10 mA VR = 3 V V = 0, f = 1 MHz IFD = 10 μA VRD = 10 V V = 0, f = 1 MHz Min. 1.2 — — — — — Typ. 1.4 — 30 7 1 — Max. 1.7 10 60 — — — Unit V μA pF V nA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Open voltage Short current Symbol VOC ISC Test Condition IF = 10 mA IF = 10 mA Min. 7.0 12 Typ. 8.0 20 Max. — — Unit V μA Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second in oil DC, 1 minute in oil Min. — 5×10 10 Typ. 0.8 10 14 Max. — — — — — Unit pF Ω Vrms Vdc 2500 — — — 5000 5000 Switching Characteristics (Ta = 25°C) Characteristic Turn−on time Turn−off time Symbol ton toff Test Condition IF = 20mA, RSH = 510kΩ CL =1000pF Min. — (Fig.1) — Typ. 0.2 1 Max. — — Unit ms ms Fig. 1 Switching time test circuit IF RSH CL VOUT IF VOUT 5V 0V RSH : External shunt resistance tON 1V tOFF 2 2002-09-25 TLP590B 100 IF – Ta Forward voltage temperature coefficient ΔVF / ΔTa (mV / ℃) −4.0 −3.6 −3.2 −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 ΔVF / ΔTa – IF 80 Allowable forward current IF (mA) 60 40 20 0 −20 0 20 40 60 80 100 0.1 0.3 0.5 1 3 5 10 30 Ambient temperature Ta (℃) Forward current IF (mA) 100 IF – VF Ta = 25°C 5000 IFP – DR Pulse width ≤ 100μs Ta = 25°C (mA) 50 30 Pulse forward current IFP (mA) 3000 1000 500 300 Forward current IF 10 5 3 100 50 30 1 1.0 10 1.2 1.4 1.6 1.8 2.0 2.2 3 10-3 3 10-2 3 10-1 3 100 Forward voltage VF (V) Duty cycle ratio DR 3 2002-09-25 TLP590B t 100 IO – VO Ta = 25°C 40 30 10 3 1 ON , OFF – CL RSH=2.4MΩ 1MΩ 510kΩ 300kΩ IF=20mA t 20 Otuput current 0 IF = 0mA 5mA t ON , OFF (ms) OFF ON Ta = 25°C IF = 20mA t VOUT RSH CL t IO (μA) −20 10mA 15mA Switching time t 0 .3 0.1 0.03 0.01 102 3 −40 20mA 25mA 300kΩ 510kΩ 1MΩ 2.4MΩ 300 10 3000 IF VOUT 0V tON 104 5V tOFF 1V −60 0 2 4 6 8 10 Output voltage VO (V) Load capacitance CL (pF) VOC – IF 10 100 50 30 ISC – IF RSH open (μA) Short current ISC Ta = 25°C RSH=2.4MΩ 0 1 3 5 10 30 50 100 8 (V) 1MΩ 6 VOC 10 5 3 510kΩ Open voltage 4 300kΩ 1 0.5 0.3 2 Ta = 25°C 3 5 10 30 50 100 0.1 1 Forward current IF (mA) Forward current IF (mA) VOC – Ta 12 24 ISC – Ta 10 20 (V) (μA) Short current ISC 8 16 VOC 6 12 Open voltage 4 8 2 IF = 10mA −20 0 20 40 60 80 100 120 4 IF = 10mA −20 0 20 40 60 80 100 120 0 0 Ambient temperature Ta (℃) Ambient temperature Ta (℃) 4 2002-09-25 TLP590B RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2002-09-25