TLP592G(F)

TLP592G TOSHIBA Photocoupler Photorelay TLP592G Telecommunications PBX Modems Unit: mm The Toshiba TLP592G consists of an infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package (DIP6). Since the TLP592G is a bi-directional switch, it can replace mechanical relays in many applications. • 6-pin DIP (DIP6) • 1-Form-A • Peak Off-state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On-state current: 120 mA (max) • On-state resistance: 35 Ω (max, t < 1 s) • On-state resistance: 50 Ω (max, continuous) • Isolation voltage: 2500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 Pin Configuration (top view) JEDEC ― JEITA ― TOSHIBA 11-7A8S Weight: 0.4 g (typ.) 1 6 2 5 1: Anode 2: Cathode 4: Drain D1 3 4 5: Source 6: Drain D2 Schematic 1 6 2 5 4 Start of commercial production 2002-01 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP592G Absolute Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA Forward current Forward current derating (Ta ≥ 25°C) LED ∆IF/°C -0.5 mA/°C Peak forward current(100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR PD 5 50 V mW △PD /°C Diode power dissipation Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage -0.5 mW/°C Tj 125 °C VOFF 350 V A connection On-state current 120 ION B connection Detector On-state current derating (Ta ≥ 25°C) mA 120 C connection 240 A connection -1.2 B connection ∆ION/°C -1.2 C connection mA/°C -2.4 Output power dissipation PO 450 mW ΔPO / °C -4.5 mW / °C Tj 125 °C Storage temperature range Tstg -55 to 125 °C Operating temperature range Topr -40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 2500 Vrms Output power dissipation derating (Ta ≥ 25°C) Junction temperature Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit VDD IF ― 5 ― 7.5 280 25 V mA Supply voltage Forward current On-state current ION ― ― 100 mA Operating temperature Topr -20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Circuit Connections 1 6 2 5 3 4 LOAD AC or DC A Connection © 2019 Toshiba Electronic Devices & Storage Corporation 1 6 2 5 3 4 B Connection 2 LOAD DC 1 6 2 5 3 4 LOAD DC C Connection 2019-06-24 TLP592G Electrical Characteristics (Ta = 25°C) Characteristics LED Detector Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA Capacitance CT V = 0 V, f = 1 MHz  30  pF Off-state current IOFF VOFF = 350 V   1 μA Capacitance COFF V = 0 V, f = 1 MHz  30  pF Min Typ. Max Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Trigger LED current IFT ION = 120 mA  1 3 mA Return LED current IFC IOFF = 100 μA 0.1   mA ION = 120 mA, IF = 5 mA, t < 1 s  25 35 ION = 120 mA, IF = 5 mA ― 35 50 ION = 120 mA, IF = 5 mA ― 28 40 ION = 240 mA, IF = 5 mA  14 20 Min Typ. Max Unit  0.8  pF 5 × 1010 1014  Ω 2500   Vrms Min Typ. Max Unit  0.3 1  0.1 1 A connection On-state resistance RON B connection C connection Ω Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Capacitance input to output CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) ms Note 2: Switching time test circuit IF 1 6 RL VDD IF VOUT 2 4 VOUT 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 3 90% tOFF 2019-06-24 TLP592G IF – Ta ION – Ta 240 200 Allowable On-sate current Allowable forward current 60 40 20 0 -20 (mA) 80 ION 280 IF (mA) 100 0 20 40 60 80 100 C connection 160 A, B connection 120 80 40 0 -20 120 0 20 Ambient temperature Ta (°C) 40 I F – VF Ta = 25°C (mA) A connection 100 ION On-state current (mA) Forward current IF 10 3 1 0.3 0.8 1 1.2 Forward voltage 1.4 VF 1.6 0 -100 -200 -4 1.8 -3 -2 (V) -1 2 3 4 (V) IFT – Ta IFT (mA) ION = 120 mA 30 Trigger LED current (Ω) On-state resistance RON 1 5 ION = 120 mA IF = 5 mA t