TLP620(F)

TLP620,TLP620−2,TLP620−4 TOSHIBA Photocoupler IRED & Photo−Transistor TLP620, TLP620−2, TLP620−4 Programmable Controllers AC / DC−Input Module Telecommunication Unit: mm The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor optically coupled to two infrared emitting diode connected in inverse parallel. The TLP620−2 offers two isolated channels in an eight lead plastic DIP, while the TLP620−4 provides four isolated channels in a sixteen plastic DIP. • Collector−emitter voltage: 55V (min.) • Current transfer ratio: 50% (min.) Rank GB: 100% (min.) • Isolation voltage: 5000Vrms (min.) TOSHIBA 11−5B2 Weight: 0.26 g (typ.) Unit: mm • Safety Standards • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1) Note 1: When an VDE approved type is needed, please designate the Option(D4). TOSHIBA • Creepage distance 7.62 mm pitch standard type : 6.4 mm (min) 10.16 mm pitch TLP×××F type 8.0 mm (min) Clearance : 6.4 mm (min) 8.0 mm (min) Insulation thickness : 0.4 mm (min) 0.4 mm (min) 11−10C4 Weight: 0.54 g (typ.) Unit: mm TOSHIBA 11−20A3 Weight: 1.1 g (typ.) Start of commercial production 1984-01 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP620,TLP620−2,TLP620−4 Pin Configurations (top view) TLP620 TLP620-2 TLP620-4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1 : ANODE CATHODE 2 : CATHODE ANODE 3 : EMITTER 4 : COLLECTOR 1, 3 : ANODE CATHODE 2, 4 : CATHODE ANODE 5, 7 : EMITTER 6, 8 : COLLECTOR 1, 3, 5, 7 2, 4, 6, 8 9, 11, 13, 15 10, 12, 14, 16 © 2019 Toshiba Electronic Devices & Storage Corporation : ANODE, CATHODE : CATHODE, ANODE : EMITTER : COLLECTOR 2 2019-06-24 TLP620,TLP620−2,TLP620−4 Absolute Maximum Ratings (Ta = 25°C) LED Characteristic TLP620 TLP620−2 TLP620−4 Unit Forward current IF (RMS) 60 50 mA Forward current derating ΔIF / °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA / °C Pulse forward current IFP Power dissipation (1 circuit) PD 100 70 mW Power dissipation derating (1 circuit) ΔPD / °C −1.2 (Ta ≥ 39°C) −0.7 (Ta ≥ 25°C) mW / °C Junction temperature Detector Rating Symbol ±1 (100μs pulse, 100pps) A Tj 125 °C Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW ΔPC / °C −1.5 −1.0 mW / °C Collector power dissipation derating (1 circuit) (Ta ≥ 25°C) Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature Tsold 260 (10 s) °C Total package power dissipation (1 circuit) PT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) ΔPT / °C −2.5 −1.5 mW / °C Isolation voltage (Note1) BVS 5000 (AC, 60 s., RH ≤ 60 %) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-24 TLP620,TLP620−2,TLP620−4 Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF (RMS) ― 16 25 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = ±10 mA 1.0 1.15 1.3 V Forward current IF VF = ±0.7 V ― 2.5 20 μA Capacitance CT V = 0 V, f = 1 MHz ― 60 ― pF Collector−emitter breakdown voltage V (BR) CEO IC = 0.5 mA 55 ― ― V Emitter−collector breakdown voltage V (BR) ECO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 10 100 nA VCE = 24 V, Ta = 85 °C ― 2 50 μA VCE = 0 V, f = 1 MHz ― 10 ― pF Min Typ. Max Unit 50 ― 600 100 ― 600 Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Current transfer ratio IC / IF Saturated CTR IC / IF (sat) Collector−emitter saturation voltage VCE (sat) Off−state collector current CTR symmetry IC (off) (Note.) IC (ratio) Test Condition IF = ±5 mA, VCE = 5 V Rank GB % IF = ±1 mA, VCE = 0.4 V Rank GB ― 60 ― 30 ― ― IC = 2.4 mA, IF = ±8 mA ― ― 0.4 IC = 0.2 mA, IF = ±1 mA Rank GB ― 0.2 ― ― ― 0.4 VF = ± 0.7 V, VCE = 24 V ― 1 10 μA 0.33 ― 3 ― IC (IF = −5 mA) / IC (IF = +5 mA) % V I (I = I , V = 5V) Note : IC(ratio)= C2 F F2 CE IC1(IF = IF1, VCE = 5V) © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-24 TLP620,TLP620−2,TLP620−4 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance input to output CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s Min Typ. Max Unit ― 0.8 ― pF 1×1012 1014 ― Ω 5000 ― ― Vrms Min Typ. Max Unit ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 15 ― ― 25 ― Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time Test Condition tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Storage time ts Turn−off time tOFF VCC = 10 V IC = 2 mA RL = 100 Ω RL = 1.9 kΩ VCC = 5 V, IF = ±16 mA (Fig.1) μs μs Fig. 1 Switching time test circuit IF RL IF VCC tS VCE VCE tON © 2019 Toshiba Electronic Devices & Storage Corporation 5 VCC 4.5V 0.5V tOFF 2019-06-24 TLP620,TLP620−2,TLP620−4 TLP620-2 TLP620-4 IF(RMS) – Ta 100 100 80 80 Allowable forward current IF(RMS) (mA) Allowable forward current IF(RMS) (mA) TLP620 60 40 20 0 −20 0 20 40 60 80 100 60 40 20 0 −20 120 Ambient temperature Ta (°C) 0 20 40 TLP620-2 TLP620-4 PC – Ta 240 120 200 100 160 120 80 40 80 100 120 PC – Ta 80 60 40 20 0 −20 0 20 40 60 80 100 0 −20 120 Ambient temperature Ta (°C) TLP620 0 20 40 TLP620-2 TLP620-4 Pulse width ≤ 100μs Allowable pulse forward current IFP (mA) 500 300 100 50 30 10−3 3 10−2 3 10−1 100 120 Pulse width ≤100μs Ta = 25°C 1000 3 80 IFP – DR 3000 Ta = 25°C 10 60 Ambient temperature Ta (°C) IFP – DR 3000 Allowable pulse forward current IFP (mA) 60 Ambient temperature Ta (°C) Allowable collector power dissipation PC (mW) Allowable collector power dissipation PC (mW) TLP620 IF(RMS) – Ta 3 1000 500 300 100 50 30 10 100 Duty cycle ratio DR 3 10−3 3 10−2 3 10−1 3 100 Duty cycle ratio DR NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-24 TLP620,TLP620−2,TLP620−4 ΔVF / ΔTa – IF I F – VF Forward current IF (mA) 50 Ta = 25°C Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) 100 30 10 5 3 1 0.5 0.3 0.1 0.4 0.6 1.0 0.8 1.2 1.4 −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 −0.4 0.1 1.6 1 0.3 Forward voltage VF (V) IFP – VFP ID (μA) Ta = 25°C 100 Collector dark current IFP (mA) Pulse forward current 101 Pulse width≤10μs 500 Repetitive 300 Frequency = 100Hz 50 30 10 5 3 0.4 1.2 0.8 1.6 2.0 Pulse forward voltage VFP 100 10−1 10−2 10−3 10−4 0 2.4 (V) 40 Collector current IC (mA) Collector current IC (mA) Ta = 25°C Ta = 25°C 20mA 15mA 50mA PC (MAX) 10mA 20 IF = 5mA 2 4 6 160 IC – VCE 30mA 0 0 120 80 Ambient temperature Ta (°C) 60 40 30 10V 5V VCE = 24V IC – VCE 80 10 IF (mA) I D – Ta 1000 1 0 3 Forward current 8 Collector-emitter voltage VCE (V) 10 50mA 25 40mA 20 30mA 20mA 15 10mA 10 5mA 5 0 0 IF = 2mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 7 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP620,TLP620−2,TLP620−4 I F – VF Ta = 25°C (mA) 20 I C – VF 100 Collector current IC (mA) 40 Forward voltage IF 60 0 −20 −40 50 30 Ta = 25°C 10V 5V 10 VCE = 0.4V 5 3 1 0.5 0.3 0.1 0.05 −3 −2 −1 0 1 2 0.03 3 0.01 Forward voltage VF (V) 0.8 1.0 0.9 1.2 1.1 1.3 Forward voltage VF (V) IC – IF Ta = 25°C 50 30 VCE = 5V VCE = 0.4V IC / IF – IF 10 500 5 3 300 Sample A Sample A Current transfer ratio IC / IF (%) Collector current IC (mA) 100 Sample B 1 0.5 0.3 0.1 50 Sample B 30 Ta = 25°C VCE = 5V VCE = 0.4V 10 0.05 0.03 0.3 100 1 3 Forward current 10 30 5 0.3 100 IF (mA) 1 3 Forward current 10 30 100 IF (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-06-24 TLP620,TLP620−2,TLP620−4 IC – Ta 100 VCE = 5V 30 10mA 5mA 10 5 3 1mA 1 0.5 0.20 0.16 0.12 0.08 0.04 0 0.5mA 0.3 0.1 IF = 5mA IC = 1mA 50 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (mA) IF = 25mA VCE (sat) – Ta 0.24 0 −20 20 40 60 80 100 Ambient temperature Ta (°C) −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Switching Time – RL 1000 ton, toff, ts Test condition 500 IF IF RL 4.5V5V VCE 0.5V VCE RBE Switching time (μs) VCC ts tON Ta = 25°C IF = 16mA VCC = 5V 300 tOFF 100 50 ts 30 tOFF 10 5 3 1 1 tON 3 10 30 Load resistance RL 100 (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-06-24 TLP620,TLP620−2,TLP620−4 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ © 2019 Toshiba Electronic Devices & Storage Corporation 10 2019-06-24