TLP620-2

TLP620,TLP620−2,TLP620−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP620, TLP620−2, TLP620−4 Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor optically coupled to two gallium arsenide infrared emitting diode connected in inverse parallel. The TLP620−2 offers two isolated channels in an eight lead plastic DIP, while the TLP620−4 provides four isolated channels in a sixteen plastic DIP. • • Collector−emitter voltage: 55V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) TOSHIBA Weight: 0.26 g 11−5B2 Unit in mm Pin Configurations (top view) TLP620 1 4 1 2 3 TLP620-2 8 1 2 3 TLP620-4 16 2 1 : ANODE CATHODE 2 : CATHODE ANODE 3 : EMITTER 4 : COLLECTOR 3 7 6 15 14 TOSHIBA 4 5 1, 3 : ANODE CATHODE 2, 4 : CATHODE ANODE 5, 7 : EMITTER 6, 8 : COLLECTOR 4 5 13 12 11 11−10C4 Weight: 0.54 g 6 7 8 10 9 1, 3, 5, 7 2, 4, 6, 8 9, 11, 13, 15 10, 12, 14, 16 : ANODE, CATHODE : CATHODE, ANODE : EMITTER : COLLECTOR TOSHIBA Weight: 1.1 g 11−20A3 1 2007-10-01 TLP620,TLP620−2,TLP620−4 Made In Japan UL recognized BSI approved E67349 7426, 7427 *1 *2 Made In Thailand E152349 7426, 7427 *1 *2 • • *1 UL1577 *2 BS EN60065: 2002, BS EN60950-1: 2002 Isolation voltage: 5000Vrms (min.) Option (D4) type VDE approved: DIN EN 60747-5-2, certificate no.40009302 Maximum operating insulation voltage: 890VPK Highest permissible over voltage: 8000VPK (Note) When an EN 60747-5-2 approved type is needed, please designate the “Option(D4)”. • Creepage distance: 6.4mm (min.) Clearance: 6.4mm (min.) Insulation thickness: 0.4mm (min.) Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Forward current Forward current derating LED Pulse forward current Power dissipation (1 circuit) Power dissipation derating Junction temperature Collector−emitter voltage Emitter−collector voltage Detector Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit) (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) Isolation voltage Symbol IF (RMS) ΔIF / °C IFP PD ΔPD / °C Tj VCEO VECO IC PC ΔPC / °C Tj Tstg Topr Tsold PT ΔPT / °C BVS 250 −2.5 150 −1.5 125 −55~125 −55~100 260 (10s) 150 −1.5 100 −1.0 125 55 7 50 100 −1.0 TLP620 60 −0.7 (Ta ≥ 39°C) TLP620−2 TLP620−4 50 −0.5 (Ta ≥ 25°C) Unit mA mA / °C A 70 −0.7 mW mW / °C °C V V mA mW mW / °C °C °C °C °C mW mW / °C Vrms 1 (100μs pulse, 100pps) 5000 (AC, 1 min., RH ≤ 60%) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2007-10-01 TLP620,TLP620−2,TLP620−4 Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF (RMS) IC Topr Min. ― ― ― −25 Typ. 5 16 1 ― Max. 24 20 10 85 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Forward current Capacitance Collector−emitter breakdown voltage Detector Emitter−collector breakdown voltage Collector dark current Capacitance (collector to emitter) Symbol VF IF CT V (BR) CEO V (BR) ECO ICEO CCE Test Condition IF = ±10mA VF = ±0.7V V = 0, f = 1MHz IC = 0.5mA IE = 0.1mA VCE = 24V VCE = 24V, Ta = 85°C VCE = 0, f = 1MHz Min. 1.0 ― ― 55 7 ― ― ― Typ. 1.15 2.5 60 ― ― 10 2 10 Max. 1.3 20 ― ― ― 100 50 ― Unit V μA pF V V nA μA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = ±5mA, VCE = 5V Rank GB IF = ±1mA, VCE = 0.4V Rank GB IC = 2.4mA, IF = ±8mA VCE (sat) IC = 0.2 mA, IF = ±1 mA Rank GB VF = ± 0.7V, VCE = 24V IC (IF = −5mA) / IC (IF = +5mA) MIn. 50 100 ― 30 ― ― ― ― 0.33 Typ. ― ― 60 ― ― 0.2 ― 1 1 Max. 600 600 ― ― 0.4 ― 0.4 10 3 μA ― V Unit % Saturated CTR IC / IF (sat) % Collector−emitter saturation voltage Off−state collector current CTR symmetry IC (off) IC (ratio) 3 2007-10-01 TLP620,TLP620−2,TLP620−4 Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1MHz VS = 500V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. ― 1×10 12 Typ. 0.8 10 14 Max. ― ― ― ― ― Unit pF Ω Vrms Vdc 5000 ― ― ― 10000 10000 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf ton toff tON ts tOFF RL = 1.9kΩ VCC = 5V, IF = ±16mA (Fig.1) VCC = 10V IC = 2mA RL = 100Ω Test Condition Min. ― ― ― ― ― ― ― Typ. 2 3 3 3 2 15 25 Max. ― ― ― ― ― ― ― μs μs Unit Fig. 1 Switching time test circuit IF VCC RL VCE IF tS VCE VCC 4.5V 0.5V tOFF tON 4 2007-10-01 TLP620,TLP620−2,TLP620−4 TLP620 100 IF – Ta 100 TLP620-2 TLP620-4 IF – Ta Allowable forward current IF (RMS) (mA) 60 Allowable forward current IF (RMS) (mA) 60 100 120 80 80 60 40 40 20 20 0 −20 0 20 40 80 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) TLP620 240 PC – Ta 120 TLP620-2 TLP620-4 PC – Ta Allowable collector power dissipation PC (mW) 160 Allowable collector power dissipation PC (mW) 0 20 40 60 80 100 120 200 100 80 120 60 80 40 40 20 0 −20 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) TLP620 3000 IFP – DR Pulse width≦100μs Ta = 25°C 3000 TLP620-2 TLP620-4 IFP – DR Pulse width≦100μs Ta = 25°C Allowable pulse forward current IFP (mA) 500 300 Allowable pulse forward current IFP (mA) − 10 3 − 10 2 − 10 1 1000 1000 500 300 100 50 30 100 50 30 10 3 3 3 3 100 10 3 − 10 3 3 − 10 2 3 − 10 1 3 100 Duty cycle ratio DR Duty cycle ratio DR 5 2007-10-01 TLP620,TLP620−2,TLP620−4 IF – V F 100 50 Ta = 25°C ΔVF / ΔTa – IF Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) −2.8 −2.4 (mA) 30 IF 10 5 3 −2.0 −1.6 Forward current 1 0.5 0.3 0.1 0.4 −1.2 −0.8 −0.4 0.1 0.6 0.8 1.0 1.2 1.4 1.6 0.3 1 3 10 30 Forward voltage VF (V) Forward current IF (mA) IFP – VFP 1000 Pulse width≦10μs 500 Repetitive 300 Frequency = 100Hz Ta = 25°C 100 101 ID – Ta 10 5 IFP (mA) ID (μA) 100 VCE = 24V Collector dark current Pulse forward current 50 30 − 10 1 − 10 2 10 5 3 1 0 − 10 3 − 10 4 0 0.4 0.8 1.2 1.6 2.0 2.4 40 80 120 160 Pulse forward voltage VFP (V) Ambient temperature Ta (°C) IC – VCE 80 Ta = 25°C IC – VCE Ta = 25°C IC (mA) 60 30mA 40 50mA 20mA 15mA IC (mA) 25 50mA 40mA 20 30mA 20mA Collector current Collector current 15 10mA 10 5mA 10mA 20 PC (MAX.) IF = 5mA 0 0 5 IF = 2mA 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 6 2007-10-01 TLP620,TLP620−2,TLP620−4 VF – IF 60 Ta = 25°C 100 50 30 10 5 3 1 0.5 0.3 0.1 0.05 −3 −2 −1 0 1 2 3 0.03 0.01 0.8 0.9 Ta = 25°C IC – V F 10 5 (mA) (mA) 40 IF 20 0 −20 −40 Forward voltage VF (V) Collector current Forward voltage IC VCE = 0.4V 1.0 1.1 1.2 1.3 Forward voltage VF (V) IC – IF 100 50 30 Ta = 25°C VCE = 5V VCE = 0.4V IC 10 5 3 Sample A Sample B 1 0.5 0.3 500 300 Sample A (mA) Collector current IC / IF – IF Current transfer ratio IC / IF (%) 100 Sample B 50 30 Ta = 25°C VCE = 5V VCE = 0.4V 0.1 0.05 0.03 0.3 1 3 10 30 100 10 5 0.3 1 3 10 30 100 Forward current IF (mA) Forward current IF (mA) 7 2007-10-01 TLP620,TLP620−2,TLP620−4 IC – Ta 100 IF = 25mA 50 VCE = 5V 0.24 VCE (sat) – Ta IF = 5mA IC = 1mA (mA) 30 10 Collector-emitter saturation voltage VCE (sat) (V) 0.20 IC 0.16 Collector current 10 5 3 5 0.12 0.08 1 1 0.5 0.3 0.5 0.04 0 −20 0 20 40 60 80 100 Ambient temperature −20 0 20 60 100 Ta (°C) 0.1 40 80 Ambient temperature Ta (°C) RL – Switching 1000 Ta = 25°C IF = 16mA VCC = 5V Time ton, toff, ts Test condition IF IF VCE VCE RBE tON tOFF ts 4.5V 5V 0.5V (μs) VCC RL 500 300 Switching time tOFF 100 50 30 ts 10 5 3 tON 1 1 3 10 30 100 Load resistance RL (kΩ) 8 2007-10-01 TLP620,TLP620−2,TLP620−4 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01