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TLP624-2

TLP624-2

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP624-2 - Programmable Controllers - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
TLP624-2 数据手册
TLP624,TLP624−2,TLP624−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP624,TLP624−2,TLP624−4 Programmable Controllers AC/DC−Input Module Telecommunication The TOSHIBA TLP624, −2 and −4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo−transistor. The TLP624−2 offers two isolated channels in an eight lead plastic DIP, while the TLP624−4 provides four isolated channels in a sixteen plastic DIP. • • Collector−emitter voltage: 55V min. Current transfer ratio Classi− fication Rank BV Standard Current Transfer Ratio(min) Ta = 25°C Ta=−25~75°C IF=0.5mA IF=1mA IF=1mA VCE=0.5V VCE=1.5V VCE=0.5V 200% 100% 100% 50% 100% 50% BV BV,blank Marking of classi− fication Unit in mm TOSHIBA Weight: 0.26 g 11−5B2 • • • • Isolation voltage: 5000Vrms min. UL recognized: UL1577, file No.E67349 BSI approved: BS EN60065: 2002 Certificate No.7426 BS EN60950-1: 2002 Certificate No.7427 Note: Application type name for certification test, please use standard product type name, i.e. TLP624(BV): TLP624 TLP624−2(BV): TLP624−2 Pin Configurations (top view) TLP624 TLP624–2 TLP624–4 TOSHIBA Weight: 0.54 g 11−10C4 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 4 3 1 2 3 4 1,3 : Anode 2,4 : Cathode 5,7 : Emitter 6,8 : Collector 8 7 6 5 1 2 3 4 5 6 7 8 1,3,5,7: Anode 2,4,6,8: Cathode 9,11,13,15: Emitter 10,12,14,16: Collector 16 15 14 13 12 11 10 9 TOSHIBA Weight: 1.1 g 11−20A3 1 2007-10-01 TLP624,TLP624−2,TLP624−4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Forward current Forward current detating Pulse forward current LED Power dissipation(1 Circuit) Power dissipation derating (Ta ≥ 25°C, 1 Circuit) Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Detector Collector current Collector power dissipation(1 circuit) Collector power dissipation derating (Ta ≥ 25°C, 1 Circuit) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation(1 Circuit) Total package power dissipation derating (Ta ≥ 25°C, 1 Circuit) Isolation voltage (Note 1) Symbol IF ΔIF / °C IFP PD ΔPD / °C VR Tj VCEO VECO IC PC ΔPC / °C Tj Tstg Popr Tsol PT ΔPT / °C BVS 250 −2.5 150 −1.5 125 −55~125 −55~100 260(10s) 150 −1.5 TLP624 60 TLP624−2 TLP624−4 50 Unit mA −0.7(Ta ≥ 39°C) −0.5(Ta ≥ 25°C) mA / °C 1(100μs, pulse, 100pps) 100 −1.0 5 125 55 7 50 100 −1.0 70 −0.7 A mW mW / °C V °C V V mA mW mW / °C °C °C °C °C mW mW / °C Vrms 5000(AC, 1min., RH≤60%) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. ― ― ― −25 Typ. 5 1.6 1 ― Max. 24 20 10 75 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP624,TLP624−2,TLP624−4 Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector Detector breakdown voltage Collector dark current Capacitance collector to emitter Symbol VF IR CT Test Condition IF = 10mA VR= 5V V = 0, f = 1MHz Min. 1.0 ― ― 55 7 ― ― ― Typ. 1.15 ― 30 ― ― 10 2 12 Max. 1.3 10 ― ― ― 100 50 ― Unit V μA pF V V nA μA pF V(BR)CEO IC = 0.5mA V(BR)ECO IE = 0.1mA ICEO CCE VCE = 24V VCE = 24V, Ta = 85°C V=0 , f=1MHz Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF IC / IF (low) Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV IC = 0.5mA, IF = 1mA Min. 100 200 50 100 ― ― ― Typ. ― ― ― ― ― 0.2 ― Max. 1200 1200 ― ― 0.4 ― 0.4 Unit % Low input CTR % Collector−emitter saturation voltage VCE (sat) IC = 1mA, IF = 1mA Rank BV V Coupled Electrical Characteristics (Ta = −25°C~75°C) Characteristic Current transfer ratio Symbol IC / IF IC / IF (low) Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV Min. 50 100 ― ― Typ. ― ― 50 100 Max. ― ― ― ― Unit % Low input CTR % 3 2007-10-01 TLP624,TLP624−2,TLP624−4 Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1MHz VS = 500V AC, 1minute Isolation voltage BVS AC, 1second, in oil DC, 1 minute, in oil Min. ― 5×10 10 Typ. 0.8 10 14 Max. ― ― ― ― ― Unit pF Ω Vrms Vdc 5000 ― ― ― 10000 10000 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf ton toff tON tS TOFF RL = 4.7 kΩ (Fig.1) VCC = 5 V, IF = 1.6mA VCC = 10V, IC = 2mA RL = 100Ω Test Condition Min. ― ― ― ― ― ― ― Typ. 8 8 10 8 10 50 300 Max. ― ― ― ― ― ― ― μs μs Unit Fig. 1 Switching time test circuit IF VCC RL VCE VCE IF tS VCC 4.5V 0.5V tON tOFF 4 2007-10-01 TLP624,TLP624−2,TLP624−4 IF – Ta 100 200 PC – Ta 80 160 TLP624 Allowable forward current IF (mA) TLP624 60 TLP624-2,-4 Allowable collector power dissipation PC (mW) 120 TLP624-2,-4 40 80 20 40 0 –20 0 20 40 60 80 100 120 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 5000 3000 Pulse width ≦ 100 μs Ta = 25 °C 100 50 30 1000 500 300 Ta = 25 °C IF – V F Allowable pulse forward current IFP (mA) (mA) 10 Forward current IF 10- 3 5 3 100 50 30 1 0.5 0.3 0.1 0.4 10 3 3 1 0 -2 3 1 0 -1 3 100 0.6 0.8 1.0 1.2 1.4 1.6 Duty cycle ratio DR Forward voltage VF (V) ΔVF / ΔTa – IF 1000 IFP – VFP IFP (mA) Pulse width ≦ 10 μs 500 Repetitive 300 Frequency = 100 Hz Ta = 25 °C 100 50 30 -2.8 Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) -2.4 -2.0 -1.6 -1.2 Pulse forward current 0.3 0.5 1 3 5 10 30 50 10 5 3 1 0 -0.8 -0.4 0.1 0.4 0.8 1.2 1.6 2.0 2.4 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2007-10-01 TLP624,TLP624−2,TLP624−4 IC / IF – IF 1000 4.0 Ta = 25 °C IC – VCE IF = 1.0 mA IC / IF (%) 500 300 3.5 3.0 100 Current transfer ratio (mA) 2.5 0.8 mA 50 30 Ta = 25 °C VCE = 5 V VCE = 1.5 V VCE = 0.5 V Collector current IC 2.0 0.6 mA 1.5 0.5 mA 1.0 0.4 mA 0.5 0.2 mA 0 0.1 10 0.1 0.3 0.5 1 3 5 10 Forward current IF (mA) 0.3 0.5 1 3 5 10 Collector-emitter voltage VCE (V) IC – IF 50 30 Ta = 25 °C VCE = 5 V VCE = 1.5 V VCE = 0.5 V 10 IF = 2 mA 10 2 mA 5 1 mA 30 IC – Ta VCE = 1.5 V VCE = 0.5 V 5 Collector current IC (mA) 3 (mA) 1 3 Collector current IC 0.5 0.3 0.5 mA 1 0.5 0.3 0.2 mA 0.1 0.05 0.1 0.03 0.05 0.01 0.1 0.03 0.3 0.5 1 3 5 10 -20 0 20 40 60 80 100 Forward current IF (mA) Ambient temperature Ta (°C) 6 2007-10-01 TLP624,TLP624−2,TLP624−4 ID – Ta 10 1 Switching Time – RL 3000 Ta = 25 °C IF = 1.6 mA VCC = 5 V 1000 500 VCE = 24 V 100 10 V Collector dark current ID (ICEO) (μA) 5V 10-1 Switching time (μs) 300 tOFF 10 -2 100 50 30 10- 3 ts tON 10-4 10 5 10-5 3 1 50 0 20 40 60 80 100 120 3 5 10 30 100 Ambient temperature Ta (°C) Load resistance RL (kΩ) 7 2007-10-01 TLP624,TLP624−2,TLP624−4 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01
TLP624-2 价格&库存

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