TLP624-4(F)

TLP624,TLP624-2,TLP624-4 TOSHIBA Photocoupler IRED & Photo-Transistor TLP624, TLP624-2, TLP624-4 Programmable Controllers AC/DC-Input Module Telecommunication Unit: mm The TOSHIBA TLP624, -2 and -4 consist of an infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic DIP, while the TLP624-4 provides four isolated channels in a sixteen plastic DIP. • Collector-emitter voltage: 55 V (min) • Isolation voltage: 5000 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL recognized: CSA Component Acceptance Service No.5A 11-5B2 Weight: 0.26 g (typ.) File No.E67349 • TOSHIBA VDE-approved: EN 60747-5-5 (Note 1) Unit: mm Note 1: When a VDE approved type is needed, please designate the Option(D4). • Note: Application type name for certification test, please use standard product type name, i.e. TLP624(BV): TLP624 TLP624-2(BV): TLP624-2 TOSHIBA 11-10C4 Weight: 0.54 g (typ.) Unit: mm TOSHIBA 11-20A3 Weight: 1.1 g (typ.) Classification Current Transfer Ratio(min) Ta = 25°C Ta=-25 to 75°C IF=1mA IF=0.5mA IF=1mA VCE=0.5V VCE=1.5V VCE=0.5V Marking of classification Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, blank © 2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 1986-04 2019-06-24 TLP624,TLP624-2,TLP624-4 Pin Configurations (top view) TLP624–4 TLP624–2 TLP624 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1. Anode 2. Cathode 3. Emitter 4. Collector 1,3 : Anode 2,4 : Cathode 5,7 : Emitter 6,8 : Collector 1,3,5,7: Anode 2,4,6,8: Cathode 9,11,13,15: Emitter 10,12,14,16: Collector © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP624,TLP624-2,TLP624-4 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current LED Forward current detating TLP624 TLP624-2 TLP624-4 Unit IF 60 50 mA ΔIF / °C -0.7(Ta ≥ 39°C) -0.5(Ta ≥ 25°C) mA / °C Pulse forward current IFP Diode Power dissipation PD 100 ΔPD / °C -1.2(Ta ≥ 39°C) Diode Power dissipation derating Detector Rating Symbol 1 (100μs, pulse, 100pps) 70 A mW -0.7(Ta ≥ 25°C) mW / °C Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 55 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW ΔPC / °C -1.5 -1.0 mW / °C Collector power dissipation derating (Ta ≥ 25°C, 1 circuit) Junction temperature Tj 125 °C Storage temperature range Tstg -55 to 125 °C Operating temperature range Popr -55 to 100 °C Lead soldering temperature Tsol 260 (10 s) °C Total package power dissipation (1 circuit) PT 250 150 mW ΔPT / °C -2.5 -1.5 mW / °C Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) Isolation voltage (Note 1) BVS 5000 (AC, 60 s, R.H.≤60 %) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― 1.6 20 mA Collector current IC ― 1 10 mA Topr -25 ― 75 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-24 TLP624,TLP624-2,TLP624-4 Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR V R= 5 V ― ― 10 μA Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF IC = 0.5 mA 55 ― ― V Collector-emitter breakdown voltage V(BR)CEO Emitter-collector breakdown voltage V(BR)ECO Collector dark current ICEO Capacitance collector to emitter CCE IE = 0.1 mA 7 ― ― V VCE = 24 V ― 10 100 nA VCE = 24 V, Ta = 85 °C ― 2 50 μA V = 0 V, f = 1 MHz ― 12 ― pF Min Typ. Max Unit 100 ― 1200 200 ― 1200 50 ― ― 100 ― ― IC = 0.5 mA, IF = 1 mA ― ― 0.4 IC = 1 mA, IF = 1 mA ― 0.2 ― ― ― 0.4 Min Typ. Max 50 ― ― 100 ― ― ― 50 ― ― 100 ― Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Low input CTR Collector-emitter saturation voltage Symbol IC / IF IC / IF (low) VCE (sat) Test Condition IF = 1 mA, VCE = 0.5 V Rank BV IF = 0.5 mA, VCE = 1.5 V Rank BV Rank BV % % V Coupled Electrical Characteristics (Ta = -25°C to 75°C) Characteristic Current transfer ratio Low input CTR Symbol IC / IF IC / IF (low) © 2019 Toshiba Electronic Devices & Storage Corporation Test Condition IF = 1 mA, VCE = 0.5 V Rank BV IF = 0.5 mA, VCE = 1.5 V Rank BV 4 Unit % % 2019-06-24 TLP624,TLP624-2,TLP624-4 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Isolation voltage BVS Test Condition VS = 0 V, f = 1 MHz VS = 500 V, R.H. ≤ 60 % AC, 60 s Min Typ. Max Unit ― 0.8 ― pF 5×1010 1014 ― Ω 5000 ― ― Vrms Min Typ. Max Unit ― 8 ― ― 8 ― ― 10 ― ― 8 ― ― 10 ― ― 50 ― ― 300 ― Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time tON Storage time tS Turn-off time tOFF Test Condition VCC = 10 V, IC = 2 mA RL = 100 Ω RL = 4.7 kΩ (Fig.1) VCC = 5 V, IF = 1.6 mA μs μs Fig. 1 Switching time test circuit IF RL IF VCC tS VCE VCE VCC 4.5V 0.5V tON © 2019 Toshiba Electronic Devices & Storage Corporation 5 tOFF 2019-06-24 TLP624,TLP624-2,TLP624-4 P C – Ta 200 80 160 60 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) I F – Ta 100 TLP624 TLP624-2,-4 40 20 0 –20 0 20 40 60 80 Ambient temperature Ta 100 TLP624 120 TLP624-2,-4 80 40 0 -20 120 0 20 40 120 1.4 1.6 2.0 2.4 Ta = 25 °C 50 Ta = 25 °C (mA) 30 1000 500 Forward current IF Allowable pulse forward current IFP (mA) 100 I F – VF 100 Pulse width ≤ 100 μs 3000 80 Ambient temperature Ta (°C) (°C) IFP – DR 5000 60 300 100 50 30 10 10 5 3 1 0.5 0.3 10-3 10-2 10-1 0.1 0.4 100 0.6 Duty cycle ratio DR 0.8 1.0 1.2 Forward voltage VF (V) ΔVF / ΔTa – IF IFP – VFP 1000 IFP (mA) -2.4 Pulse forward current Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) -2.8 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 0.3 0.5 1 3 Forward current 5 10 IF (mA) 30 50 Pulse width ≤ 10 μs 500 Repetitive 300 Frequency = 100 Hz Ta = 25 °C 100 50 30 10 5 3 1 0 0.4 0.8 1.2 1.6 Pulse forward voltage VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 6 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP624,TLP624-2,TLP624-4 IC – VCE IC / IF – IF 4.0 (%) 300 Ta = 25 °C IF = 1.0 mA 3.5 (mA) 3.0 Ta = 25 °C 50 VCE = 5 V 30 VCE = 1.5 V VCE = 0.5 V 10 0.1 0.3 0.5 1 Forward current 3 IF 0.8 mA 2.5 IC 100 5 10 Collector current Current transfer ratio 500 IC / IF 1000 2.0 0.6 mA 1.5 0.5 mA 1.0 (mA) 0.4 mA 0.5 0.2 mA 0 0.1 0.3 0.5 1 Collector-emitter voltage 3 5 VCE (V) 10 IC – IF 50 Ta = 25 °C 30 VCE = 5 V VCE = 1.5 V IC – Ta VCE = 0.5 V 30 VCE = 1.5 V 10 VCE = 0.5 V IF = 2 mA 10 5 (mA) 1 mA 3 IC 1 0.5 Collector current Collector current 2 mA 3 IC (mA) 5 0.3 0.1 0.5 mA 1 0.5 0.3 0.2 mA 0.05 0.1 0.03 0.05 0.01 0.1 0.3 0.5 1 Forward current 3 IF (mA) 5 10 0.03 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 7 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP624,TLP624-2,TLP624-4 ICEO – Ta 10 Switching Time – RL 1 3000 VCE = 24 V 1000 5V 500 (μs) 10-1 Switching time Collector dark current ICEO (μA) IF = 1.6 mA VCC = 5 V 10 V 100 Ta = 25 °C 10-2 10-3 300 tOFF 100 50 ts 30 tON 10-4 10 5 10-5 0 20 40 60 80 100 Ambient temperature Ta (°C) 120 3 1 3 5 10 Load resistance RL 30 50 100 (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 8 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP624,TLP624-2,TLP624-4 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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