TLP626,TLP626-2,TLP626-4
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP626,TLP626-2,TLP626-4
Unit in mm
Programmable Controllers AC / DC−Input Module Telecommunication
The TOSHIBA TLP626, −2 and −4 consist of gallium arsenide infrared emitting diodes connected in inverse parallel, optically coupled to a photo−transistor. The TLP626−2 offers two isolated channels in an eight lead plastic DIP, while the TLP626−4 provides four isolated channels in a sixteen plastic DIP. • • Collector−emitter voltage: 55V(min.) Current transfer ratio
Current Transfer Ratio(min.) Classi− fication Ta = 25°C IF = ±1mA VCE = 0.5V 200% 100% IF = ±0.5mA VCE = 1.5V 100% 50% Ta = −25~75°C IF = ±1mA VCE = 0.5V 100% 50% Marking Of Classi− fication BV BV, blank
TOSHIBA Weight: 0.26g
11−5B2
Rank BV Standard
• • • •
Isolation voltage: 5000Vrms min. UL recognized: UL1577, file no.E67349 BSI approved: BS EN60065: 2002 certificate no.7426 BS EN60950-1: 2002 certificate no.7427 Note: Application type name for certification test, please use standard product type name, i.e. TLP626(BV): TLP626 TOSHIBA Weight: 0.54g 11−10C4
Pin Configuration (top view)
TLP626 TLP626–2 TLP626–4
1 2
1 : Anode Cathode 2 : Cathode Anode 3 : Emitter 4 : Collector
4 3
1 2 3 4
1, 3 : Anode Cathode 2, 4 : Cathode Anode 5, 7 : Emitter 6, 8 : Collector
8 7 6 5
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
TOSHIBA Weight: 1.1g 11−20A3
1, 3, 5, 7 : Anode, Cathode 2, 4, 6, 8 : Cathode, Anode 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector
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Absolute Maximum Ratings (Ta = 25°C)
Rating Characteristic Forward current Forward current derating Pulse forward current LED Power dissipation (1 circuit) Power dissipation derating (Ta ≥ 25°C, 1 circuit) Junction temperature Collector−emitter voltage Emitter−collector voltage Detector Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (Ta ≥ 25°C, 1 circuit) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation (1 circuit) Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) Isolation voltage (Note 1) Symbol IF ΔIF / °C IFP PD ΔPD / °C Tj VCEO VECO IC PC ΔPC / °C Tj Tstg Popr Tsol PT ΔPT / °C BVS 250 −2.5 150 −1.5 125 −55~125 −55~100 260(10s) 150 −1.5 TLP626 60 −0.7(Ta ≥ 39°C) TLP626−2 TLP626−4 50 −0.5(Ta ≥ 39°C) Unit mA mA / °C A mW mW / °C °C V V mA 100 −1.0 mW mW / °C °C °C °C °C mW mW / °C Vrms
1(100μs pulse,100pps) 100 −1.0 125 55 7 50 70 −0.7
5000(AC, 1min., RH≤60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.
Recommended Operating Conditions
Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF(RMS) IC Topr Min. ― ― ― −25 Typ. 5 1.6 1 ― Max. 24 20 10 75 Unit V mA mA °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector Detector breakdown voltage Collector dark current Capacitance collector to emitter Symbol VF IF CT Test Condition IF = ±10mA VF = ±0.7V V = 0, f = 1MHz Min. 1.0 ― ― 55 7 ― ― ― Typ. 1.15 2.5 60 ― ― 10 2 12 Max. 1.3 20 ― ― ― 10 50 ― Unit V μA pF V V nA μA pF
V(BR)CEO IC = 0.5mA V(BR)ECO IE = 0.1mA ICEO CCE VCE = 24V VCE = 24V, Ta = 85°C V=0, f=1MHz
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = ±1mA, VCE = 0.5V rank BV IF = ±0.5mA, VCE = 1.5V rank BV IC = 0.5mA, IF = ±1mA VCE(sat) IC = 1mA, IF = ±1mA rank BV Off−state collector current CTR symmetry *1 IC(off) IC(ratio) VF = ±0.7V, VCE = 24V IC(IF = −1mA) / IC(IF = 1mA) Min. 100 200 50 100 ― ― ― ― 0.5 Typ. ― ― ― ― ― 0.2 ― 1 ― Max. 1200 1200 ― ― 0.4 ― 0.4 10 2 μA ― V Unit %
Low input CTR
IC / IF(low)
%
Collector−emitter saturation voltage
Coupled Electrical Characteristics (Ta = −25~75°C)
Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 1mA, VCE = 0.5V rank BV IF = 0.5mA, VCE = 1.5V rank BV Min. 50 100 ― ― Typ. ― ― 50 100 Max. ― ― ― ― Unit %
Low input CTR
IC / IF(low)
%
*1
IC1
I (I = I V = 5 V) IC(ratio) = C2 F F2, CE IC1(IF = IF1, VCE = 5 V)
IF1 IF2
IC2
VCE
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Isolation Characteristics (Ta = 25°C)
Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1MHz VS = 500V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. ― 5×10
10
Typ. 0.8 10
14
Max. ― ― ― ― ―
Unit pF Ω Vrms Vdc
5000 ― ―
― 10000 10000
Switching Characteristics (Ta = 25°C)
Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf ton toff tON ts TOFF RL = 4.7kΩ (Fig.1) VCC = 5 V, IF = ±1.6mA VCC = 10V, IC = 2mA RL = 100Ω Test Condition Min. ― ― ― ― ― ― ― Typ. 8 8 10 8 10 50 300 Max. ― ― ― ― ― ― ― μs μs Unit
Fig. 1 Switching operating conditions
IF tS VCE VCC 4.5V 0.5V tON tOFF
IF
VCC RL VCE
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IF – Ta
100 200
PC – Ta
80
160
TLP626
Allowable forward current IF (RMS) (mA)
TLP626 60 TLP626-2, -4
Allowable collector power dissipation PC (mW)
120
TLP626-2, -4
40
80
20
40
0 -20
0
20
40
60
80
100
120
0 -20
0
20
40
60
80
100
120
Ambient temperature
Ta (°C)
Ambient temperature
Ta (°C)
IFP – DR
5000 3000 Pulse width ≤ 100 μs Ta = 25 °C 100 50 30 1000 500 300 Ta = 25 °C
IF – VF
Allowable pulse forward current IFP (mA)
(mA)
10
Forward current IF
10-
3
5 3
100 50 30
1 0.5 0.3 0.1 0.4
10 3
3
1 0 -2
3
1 0 -1
3
100
06
0.8
1.0
1.2
1.4
1.6
Duty cycle ratio
DR
Forward voltage
VF
(V)
ΔVF / ΔTa – IF
1000
IFP – VFP
IFP (mA)
Pulse width ≦ 10 μs 500 Repetitive 300 Frequency = 100 Hz Ta = 25 °C 100 50 30
-2.8
Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C)
-2.4
-2.0
-1.6 -1.2
Pulse forward current
0.3 0.5 1 3 5 10 30 50
10 5 3 1 0
-0.8 -0.4 0.1
0.4
0.8
1.2
1.6
2.0
2.4
Forward current
IF
(mA)
Pulse forward voltage
VFP
(V)
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IC / IF – IF
1000 4.0 Ta = 25 °C
IC – VCE
IF = 1.0 mA
IC / IF (%)
500 300
3.5
3.0
Current transfer ratio
(mA)
100
2.5
0.8 mA
30
VCE = 5 V VCE = 1.5 V VCE = 0.5 V
Collector current IC
50
Ta = 25 °C
2.0 0.6 mA
10 0.1
1.5
0.3
0.5
1
3
5
10
0.5 mA 1.0 0.4 mA 0.5 0.2 mA 0 0.1
Forward current IF
(mA)
0.3
0.5
1
3
5
10
Collector-emitter voltage
VCE (V)
IC – IF
50 Ta = 25 °C 30 VCE = 5 V VCE = 1.5 V VCE = 0.5 V 10 IF = 2 mA 10 2 mA 5 3 1 mA 30 VCE = 1.5 V VCE = 0.5 V 5 3
IC – Ta
Collector current IC
(mA)
1
(mA)
0.5 0.3
Collector current IC
0.5 mA 1
0.5 0.3
0.1
0.2 mA
0.05 0.03 0.1
0.05 0.01 0.1 0.03
0.3
0.5
1
3
5
10
-20
0
20
40
60
80
100
Forward current IF
(mA)
Ambient temperature
Ta
(°C)
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ID – Ta
10
1
Switching Time – RL
Ta = 25 °C 3000 I = 1.6 mA F VCC = 5 V 1000
VCE = 24 V 100 10 V
Collector dark current ID (ICEO) (μA)
5V 500 10-
1
Switching time (μs)
300 tOFF
10
-2
100
50 30
10-
3
ts
tON 10-4 10
5. 10-5 3 1 50
0
20
40
60
80
100
120
3
5
10
30
100
Ambient temperature
Ta
(°C)
Load resistance
RL
(kΩ)
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RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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