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TLP628(GB,F)

TLP628(GB,F)

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    DIP4

  • 描述:

    TLP628(GB,F)

  • 数据手册
  • 价格&库存
TLP628(GB,F) 数据手册
TLP628,TLP628−2,TLP628−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP628,TLP628−2,TLP628−4 Unit: mm Programmable Controllers DC−Output Module Telecommunication The TOSHIBA TLP628, −2, and −4 consists of a gallium arsenide infrared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector−emitter breakdown voltage. The TLP628−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP628−4 provide four isolated channels per package. • Collector−emitter voltage: 350 V (min.) • Current transfer ratio: 50% (min.) TOSHIBA 11−5B2 Weight: 0.26 g (typ.) • Isolation voltage: 5000Vrms (min.) • UL recognized: UL1577, file No. E67349 • cUL approved: CSA Component Acceptance Service No.5A, file No. E67349 • Option (D4) VDE approved : DIN EN60747-5-5 (Note1) (Note 1) : When a EN60747-5-5 approved type is needed, please designate “Option(D4)” Pin Configurations (top view) TLP628 TOSHIBA TLP628-4 TLP628-2 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 1: Anode 2: Cathode 3: Emitter 4: Collector 1, 3: Anode 2, 4: Cathode 5, 7: Emitter 11−10C4 Weight: 0.54 g (typ.) 6, 8: Collector TOSHIBA 11−20A3 Weight: 1.1 g (typ.) 8 9 1, 3, 5, 7: Anode 2, 4, 6, 8: Cathode 9, 11, 13, 15: Emitter 10, 12, 14, 16: Collector Start of commercial production 1993/10 1 2017-12-25 TLP628,TLP628−2,TLP628−4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Forward current LED Forward current derating TLP628 TLP628−2 TLP628−4 Unit IF 60 50 mA ΔIF / °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA / °C Pulse forward current IFP 1 (100μs pulse, 100pps) A Reverse voltage VR 5 V Input power dissipation PD 100 70 mW ΔPD / °C −1.0 −0.7 mW / °C Input power dissipation derating (Ta ≥ 25°C, 1 circuit) Detector Symbol Collector−emitter voltage VCEO 350 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (Ta ≥ 25°C, 1 circuit) ΔPC / °C −1.5 −1.0 mW / °C Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −55 to 100 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation (1 circuit) PT 200 150 mW Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) ΔPT / °C −2.0 −1.5 mW / °C Isolation voltage 5000 (AC, 1min., R.H. ≤ 60%) (Note 1) BVS Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― ― 200 V Forward current IF ― 16 25 mA Collector current IC ― ― 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2017-12-25 TLP628,TLP628−2,TLP628−4 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.1 mA 350 ― ― V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V VCE = 300 V ― 10 200 nA VCE = 300 V, Ta = 85°C ― ― 50 μA V = 0 V, f = 1 MHz ― 10 ― pF Min. Typ. Max. Unit 50 ― 600 100 ― 600 Collector dark current Capacitance collector to emitter ICEO CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Collector−emitter saturation voltage Symbol Test Condition IC / IF IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB ― 60 IC / IF (sat) ― 30 ― ― IC = 2.4 mA, IF = 8 mA ― ― 0.4 ― 0.2 ― ― ― 0.4 Min. Typ. Max. Unit ― 0.8 ― pF ― Ω VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB % % V Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol Test Condition CS VS = 0 V, f = 1 MHz RS VS = 500 V R.H. ≤ 60% BVS 10 14 5000 ― ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― AC, 1 minute Isolation voltage 5×10 10 3 Vrms Vdc 2017-12-25 TLP628,TLP628−2,TLP628−4 Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time Test Condition VCC = 10 V, IC = 2 mA ARL = 100Ω ton Min. Typ. Max. ― 2 ― ― 3 ― ― 3 ― Turn−off time toff ― 3 ― Turn−on time tON ― 3 ― ― 40 ― ― 90 ― Storage time ts Turn−off time tOFF RL = 1.9 kΩ (Note 1) VCC = 5 V, IF = 16 mA Unit μs μs Note 1 Switching time test circuit IF VCC IF VCC tS RL 4.5V VCE VCE 0.5V tON 4 tOFF 2017-12-25 TLP628,TLP628−2,TLP628−4 PC– Ta 200 80 160 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 100 TLP628. 60 TLP628-2,-4 40 20 0 -20 TLP628. 120 TLP628-2,-4 80 40 0 20 40 60 80 100 0 -20 120 0 20 Ambient temperature Ta (°C) 100 120 IF – V F Ta = 25°C 50 Ta = 25°C (mA) 30 1000 10 500 Forward current IF Allowable pulse forward current IFP (mA) 80 100 Pulse width ≤ 100μs 3000 60 Ambient temperature Ta (°C) IFP – DR 5000 40 300 100 50 30 10 10-3 10-2 3 1 0.5 0.3 0.1 0.4 100 10-1 5 0.6 Duty cycle ratio DR 0.8 1.0 1.2 Forward voltage VF ΔVF/ΔTa – IF 1.4 1.6 2.0 2.4 (V) IFP – VFP 1000 Pulse forward current IFP (mA) Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 0.3 0.5 1 3 5 Forward current IF 10 30 Pulse width ≤ 100μs 500 Repetitive 300 Frequency = 100 Hz Ta = 25°C 100 50 30 10 5 3 1 0 50 (mA) 0.4 0.8 1.2 1.6 Pulse forward voltage VFP (V) 5 2017-12-25 TLP628,TLP628−2,TLP628−4 ICEO – Ta IC – VCE 80 (mA) Collector dark current ICEO (μA) 101 100 Ta = 25°C 60 Collector current IC 5 VCE = 300 V 200 V 10-1 100 V 30 20 40 15 10 PC(MAX.) 20 IF = 5 mA 10-2 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) 10-3 0 20 40 60 80 100 Ambient temperature Ta (°C) IC – VCE 50 (mA) 30 Collector current IC (mA) Ta = 25°C 50 VCE = 5 V VCE = 0.4 V Collector current IC 100 40 50 IC – I F 10 Sample A 5 3 Ta = 25°C 30 20 25 10 Sample B 5 1 IF = 2 mA 0 0 0.5 0.5 1.0 1.5 Collector-emitter voltage VCE (V) 0.3 0.1 0.05 0.03 0.3 1 3 10 Forward current IF 30 100 (mA) 6 2017-12-25 TLP628,TLP628−2,TLP628−4 IC – Ta VCE(sat)– Ta 0.20 30 IF = 5 mA 10 0.12 mA) 5 3 Collector current IC Collector-emitter saturation voltage VCE(sat) (V) IC = 1 mA 0.16 0.08 0.04 0 -20 0 20 40 60 80 1 0.5 0.3 100 Ambient temperature Ta (°C) VCE = 5 V IF = 5 mA 0.1 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) IC / IF – I F 1000 Switching Time – RL Sample A IF = 16 mA 500 VCC = 5 V 100 Ta = 25°C 300 Sample B tOFF ts 100 10 Switching time (μs) Current transfer ratio IC/IF (%) 1000 Ta = 25°C VCE = 5 V VCE = 0.4 V 1 0.1 1 Forward current IF 10 100 (mA) 50 30 10 5 3 1 1 tON 3 5 10 30 Load resistance RL 7 50 100 300 (kΩ) 2017-12-25 TLP628,TLP628−2,TLP628−4 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 8 2017-12-25
TLP628(GB,F) 价格&库存

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TLP628(GB,F)
    •  国内价格
    • 20+28.68868

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      •  国内价格
      • 1+4.52160

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