TLP628M,TLP628MF
Photocouplers
Infrared LED & Photo Transistor
TLP628M,TLP628MF
1. Applications
•
Programmable Logic Controllers (PLCs)
•
Home Electric Appliances
2. General
TLP628M is a photocoupler that consists of a photo transistor optically coupled to an infrared emitting diode in
a 4pin DIP.
TLP628M is guaranteed high temperature operation (125 max), with the high Collector-emitter voltage (VCEO)
350 V, it's suitable for use in programmable logic controllers (PLCs), and home appliance, include air conditioners.
TLP628MF is a lead forming type for the long creepage mounting of TLP628M.
3. Features
(1)
Collector-emitter voltage: 350 V (min)
(2)
Current transfer ratio: 50 % (min) (@IF = 5 mA, VCE = 5 V)
(3)
Isolation voltage: 5000 Vrms (min)
(4)
Operating temperature: -55 to 125
(5)
Safety standards
GB Rank: 100 % (min) (@IF = 5 mA, VCE = 5 V)
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan Factory (Pending)
Note 1: When a VDE approved type is needed, please designate the Option (D4)
(D4).
Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation
1
2018-12
2018-12-06
Rev.1.0
TLP628M,TLP628MF
4. Packaging (Note)
TLP628M
TLP628M(LF1,TP1)
TLP628M(LF5,TP5)
11-5B205S
11-5B201S
11-5B2S
TLP628MF
TLP628MF(LF4,TP4)
11-5B204S
11-5B202S
Note:
Through-hole type: TLP628M, TLP628MF
Lead forming option: (LF1), (LF4), (LF5)
Taping option: (TP1), (TP4), (TP5)
5. Pin Assignment
1: Anode
2: Cathode
3: Emitter
4: Collector
6. Mechanical Parameters
7.62 mm pitch
TLP628M type
(Min)
10.16 mm pitch
TLP628MF type
(Min)
Unit
Creepage distances
7.0
8.0
mm
Clearance
7.0
8.0
Internal isolation thickness
0.4
0.4
Characteristics
©2018
Toshiba Electronic Devices & Storage Corporation
2
2018-12-06
Rev.1.0
TLP628M,TLP628MF
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
LED
Symbol
Input forward current
Input forward current derating
(Ta ≥ 90 )
Unit
IF
50
mA
-1.11
mA/
1
A
5
V
IFP
Input reverse voltage
VR
Input power dissipation
(Ta ≥ 90 )
Rating
∆IF/∆Ta
Input forward current (pulsed)
Input power dissipation derating
Note
(Note 1)
PD
100
mW
∆PD/∆Ta
-2.22
mW/
Tj
135
Detector Collector-emitter voltage
Junction temperature
VCEO
350
V
Emitter-collector voltage
VECO
7
V
IC
50
mA
Collector current
Collector power dissipation
Collector power dissipation derating
(Ta ≥ 25 )
PC
150
mW
∆PC/∆Ta
-1.36
mW/
Junction temperature
Common Operating temperature
Storage temperature
135
-55 to 125
Tstg
-55 to 125
(10 s)
Tsol
260
PT
250
mW
(Ta ≥ 25 )
∆PT/∆Ta
-2.27
mW/
(AC, 60 s, R.H. ≤ 60 %)
BVS
5000
Vrms
Lead soldering temperature
Total power dissipation
Total power dissipation derating
Isolation voltage
Tj
Topr
(Note 2)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 0.1 ms, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
8. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
LED
Input forward voltage
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
1.25
1.4
V
VF
IF = 10 mA
1.1
Input reverse current
IR
VR = 5 V
10
µA
Input capacitance
Ct
V = 0 V, f = 1 MHz
30
pF
Detector Collector-emitter breakdown voltage V(BR)CEO
IC = 0.1 mA
350
V
Emitter-collector breakdown voltage V(BR)ECO
IE = 0.1 mA
7
V
Dark Current
VCE = 300 V
0.001
0.2
µA
VCE = 300 V, Ta = 85
200
V = 0 V, f = 1 MHz
20
Collector-emitter capacitance
©2018
Toshiba Electronic Devices & Storage Corporation
IDARK
CCE
3
pF
2018-12-06
Rev.1.0
TLP628M,TLP628MF
9. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Current transfer ratio
IC/IF
Note
Test Condition
IC/IF(sat)
Collector-emitter saturation voltage VCE(sat)
OFF-state collector current
Typ.
Max
Unit
%
(Note 1) IF = 5 mA, VCE = 5 V
50
600
100
600
IF = 1 mA, VCE = 0.4 V
60
IF = 1 mA, VCE = 0.4 V, GB Rank
30
IC = 2.4 mA, IF = 8 mA
0.4
IC = 0.2 mA, IF = 1 mA
0.2
IC = 0.2 mA, IF = 1 mA, GB Rank
0.4
V
VF = 0.7 V, VCE = 350 V
200
µA
IF = 5 mA, VCE = 5 V, GB Rank
Saturated current transfer ratio
Min
IC(off)
%
V
Note 1: See Table 9.1 for current transfer ratio.
Table 9.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, Ta = 25 )
Rank
Note
Blank
GB
Note:
Current transfer ratio Current transfer ratio
IC/IF (min)
IC/IF (max)
Test Condition
Marking of
classification
Unit
%
IF = 5 mA, VCE = 5 V
50
600
Blank, GB
IF = 5 mA, VCE = 5 V
100
600
GB
Specify both the part number and a rank in this format when ordering.
Example: TLP628M(GB,E
For safety standard certification, however, specify the part number alone.
Example: TLP628M(GB,E → TLP628M
10. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Total capacitance (input to output)
CS
(Note 1) VS = 0 V, f = 1 MHz
Isolation resistance
RS
(Note 1) VS = 500 V, R.H. ≤ 60 %
Isolation voltage
BVS
Note
Test Condition
(Note 1) AC, 60 s
Min
Typ.
Max
Unit
0.6
pF
1 × 1012
1014
Ω
5000
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
11. Switching Characteristics (Unless otherwise specified,Ta = 25 )
Characteristics
Rise time
Fall time
Symbol
tr
tf
Turn-on time
ton
Turn-off time
toff
Turn-on time
ton
Storage time
ts
Turn-off time
toff
Note
Test Condition
VCC = 10 V, IC = 2 mA,
RL = 100 Ω
See Fig. 11.1.
RL = 1.9 kΩ, VCC = 5 V,
IF = 16 mA
Min
Typ.
Max
Unit
5.5
µs
10
10
10
1.3
55
68
Fig. 11.1 Switching Time Test Circuit and Waveform
©2018
Toshiba Electronic Devices & Storage Corporation
4
2018-12-06
Rev.1.0
TLP628M,TLP628MF
12. Characteristics Curves (Note)
Fig. 12.1 IF - Ta
Fig. 12.2 PC - Ta
Fig. 12.3 IFP - DR
Fig. 12.4 IF - VF
Fig. 12.5 ∆VF/∆Ta - IF
Fig. 12.6 IFP - VFP
©2018
Toshiba Electronic Devices & Storage Corporation
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2018-12-06
Rev.1.0
TLP628M,TLP628MF
Fig. 12.7 IC - VCE
Fig. 12.8 IC - VCE
Fig. 12.9 IDARK - Ta
Fig. 12.10 VCE(sat) - Ta
Fig. 12.11 IC - IF
Fig. 12.12 IC/IF - IF
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Toshiba Electronic Devices & Storage Corporation
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2018-12-06
Rev.1.0
TLP628M,TLP628MF
Fig. 12.13 IC - Ta
Fig. 12.14 Switching Time - RL
Fig. 12.15 Switching Time - Ta
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2018
Toshiba Electronic Devices & Storage Corporation
7
2018-12-06
Rev.1.0
TLP628M,TLP628MF
13. Soldering and Storage
13.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective
of whether a soldering iron or a reflow soldering method is used.
•
When using soldering reflow.
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig. 13.1.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
•
When using soldering flow
Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds.
Mounting condition of 260 within 10 seconds is recommended.
Flow soldering must be performed once.
•
When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not
exceeding 350
Heating by soldering iron must be done only once per lead.
13.2. Precautions for General Storage
•
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
•
Follow the precautions printed on the packing label of the device for transportation and storage.
•
Keep the storage location temperature and humidity within a range of 5 to 35 and 45 % to 75 %,
respectively.
•
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
•
Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
•
When restoring devices after removal from their packing, use anti-static containers.
•
Do not allow loads to be applied directly to devices while they are in storage.
•
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
©2018
Toshiba Electronic Devices & Storage Corporation
8
2018-12-06
Rev.1.0
TLP628M,TLP628MF
14. Marking (Note)
Fig. 14.1 Marking example of TLP628M
Note:
Fig. 14.2 Marking example of TLP628MF
A different marking is used for photocouplers that have been qualified according to option (D4) of EN 60747.
See Fig.15.4 and Fig.15.5.
©2018
Toshiba Electronic Devices & Storage Corporation
9
2018-12-06
Rev.1.0
TLP628M,TLP628MF
15. EN 60747-5-5 Option (D4) Specification
•
Part number: TLP628M,TLP628MF (Note 1)
•
The following part naming conventions are used for the devices that have been qualified according to
option (D4) of EN 60747.
Example: TLP628M(D4GBT1,E
D4: EN 60747 option
CB: CTR rank
T1: Tape type (TP1)
E: [[G]]/RoHS COMPATIBLE (Note 2)
Note 1: Use TOSHIBA standard type number for safety standard application.
e.g., TLP628M(D4GBT1,E → TLP628M
Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Fig. 15.1 EN 60747 Insulation Characteristics
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Toshiba Electronic Devices & Storage Corporation
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2018-12-06
Rev.1.0
TLP628M,TLP628MF
Fig. 15.2 Insulation Related Specifications (Note)
Note:
Note:
If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value.
(e.g., at a standard distance between soldering eye centers of 7.5 mm). If this is not permissible, the user shall
take suitable measures.
This photocoupler is suitable for safe electrical isolation only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
Fig. 15.3 Marking on packing for EN 60747
Fig. 15.4 Marking Example of TLP628M (Note 1)
Fig. 15.5 Marking Example TLP628MF (Note 1)
Note 1: The above marking is applied to the photocouplers that have been qualified according to option (D4) of EN 60747.
©2018
Toshiba Electronic Devices & Storage Corporation
11
2018-12-06
Rev.1.0
TLP628M,TLP628MF
Fig. 15.6 Measurement Procedure
©2018
Toshiba Electronic Devices & Storage Corporation
12
2018-12-06
Rev.1.0
TLP628M,TLP628MF
Package Dimensions
Unit: mm
TLP628M
Weight: 0.24 g (typ.)
Package Name(s)
TOSHIBA: 11-5B2S
©2018
Toshiba Electronic Devices & Storage Corporation
13
2018-12-06
Rev.1.0
TLP628M,TLP628MF
Package Dimensions
Unit: mm
TLP628M(LF1,TP1)
Weight: 0.24 g (typ.)
Package Name(s)
TOSHIBA: 11-5B201S
©2018
Toshiba Electronic Devices & Storage Corporation
14
2018-12-06
Rev.1.0
TLP628M,TLP628MF
Package Dimensions
Unit: mm
TLP628M(LF5,TP5)
Weight: 0.24 g (typ.)
Package Name(s)
TOSHIBA: 11-5B205S
©2018
Toshiba Electronic Devices & Storage Corporation
15
2018-12-06
Rev.1.0
TLP628M,TLP628MF
Package Dimensions
Unit: mm
TLP628MF
Weight: 0.24 g (typ.)
Package Name(s)
TOSHIBA: 11-5B202S
©2018
Toshiba Electronic Devices & Storage Corporation
16
2018-12-06
Rev.1.0
TLP628M,TLP628MF
Package Dimensions
Unit: mm
TLP628MF(LF4,TP4)
Weight: 0.24 g (typ.)
Package Name(s)
TOSHIBA: 11-5B204S
©2018
Toshiba Electronic Devices & Storage Corporation
17
2018-12-06
Rev.1.0
TLP628M,TLP628MF
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2018-12-06
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