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TLP628_07

TLP628_07

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP628_07 - Programmable Controllers - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLP628_07 数据手册
TLP628,TLP628−2,TLP628−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP628,TLP628−2,TLP628−4 Programmable Controllers DC−Output Module Telecommunication The TOSHIBA TLP628, −2, and −4 consists of a gallium arsenide infrared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector−emitter breakdown voltage. The TLP628−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP628−4 provide four isolated channels per package. • • • • • Collector−emitter voltage: 350 V (min.) Current transfer ratio: 50% (min.) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577, file No. E67349 BSI approved: BS EN60065:2002, certificate no.7426 BS EN60950-1:2002, certificate no.7427 TOSHIBA Weight: 0.26g 11−5B2 Unit in mm Pin Configurations (top view) TLP628 1 4 1 TLP628-2 8 1 TLP628-4 16 2 1: Anode 2: Cathode 3: Emitter 4: Collector 3 2 7 2 15 TOSHIBA 3 14 11−10C4 3 6 Weight: 0.54g 4 1, 3: Anode 2, 4: Cathode 5, 7: Emitter 6, 8: Collector 5 4 13 5 12 6 11 7 10 8 1, 3, 5, 7: Anode 2, 4, 6, 8: Cathode 9, 11, 13, 15: Emitter 10, 12, 14, 16: Collector 9 TOSHIBA Weight: 1.1g 11−20A3 1 2007-10-01 TLP628,TLP628−2,TLP628−4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Forward current Forward current derating LED Pulse forward current Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Detector Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (Ta ≥ 25°C, 1 circuit) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation (1 circuit) Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) Isolation voltage Symbol IF ΔIF / °C IFP VR Tj VCEO VECO IC PC ΔPC / °C Tj Tstg Topr Tsol PT ΔPT / °C BVS 200 −2.0 150 −1.5 125 −55~125 −55~100 260 (10s) 150 −1.5 TLP628 60 −0.7 (Ta ≥ 39°C) TLP628−2 TLP628−4 50 −0.5 (Ta ≥ 25°C) Unit mA mA / °C A V °C V V mA 100 −1.0 mW mW / °C °C °C °C °C mW mW / °C Vrms 1 (100μs pulse, 100pps) 5 125 350 7 50 5000 (AC, 1min., R.H. ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. ― ― ― −25 Typ. ― 16 ― ― Max. 200 25 10 85 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP628,TLP628−2,TLP628−4 Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Detector Emitter−collector breakdown voltage Collector dark current Capacitance collector to emitter Symbol VF IR CT V(BR) CEO V(BR) ECO ICEO CCE Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.1 mA IE = 0.1 mA VCE = 300 V VCE = 300 V, Ta = 85°C V = 0, f = 1 MHz Min. 1.0 ― ― 350 7 ― ― ― Typ. 1.15 ― 30 ― ― 10 ― 10 Max. 1.3 10 ― ― ― 200 50 ― Unit V μA pF V V nA μA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB Min. 50 100 ― 30 ― ― ― Typ. ― ― 60 ― ― 0.2 ― Max. 600 600 ― ― 0.4 ― 0.4 V Unit % Saturated CTR IC / IF (sat) % Collector−emitter saturation voltage Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. ― 5×10 10 Typ. 0.8 10 14 Max. ― ― ― ― ― Unit pF Ω Vrms Vdc 5000 ― ― ― 10000 10000 3 2007-10-01 TLP628,TLP628−2,TLP628−4 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf ton toff tON ts tOFF RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA VCC = 10 V, IC = 2 mA ARL = 100Ω Test Condition Min. ― ― ― ― ― ― ― Typ. 2 3 3 3 3 40 90 Max. ― ― ― ― ― ― ― μs μs Unit Fig. 1 Switching time test circuit IF VCC RL VCE VCE IF tS VCC 4.5V 0.5V tON tOFF 4 2007-10-01 TLP628,TLP628−2,TLP628−4 IF – Ta 100 200 PC– Ta 80 160 TLP628. TLP628. Allowable forward current IF (mA) 60 TLP628-2,-4 40 Allowable collector power dissipation PC (mW) 120 TLP628-2,-4 80 20 40 0 -20 0 20 40 60 80 100 120 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 5000 3000 Pulse width ≤ 100μs Ta = 25°C 100 50 30 1000 500 300 Ta = 25°C IF – V F Allowable pulse forward current IFP (mA) (mA) 10 Forward current IF 10-3 10-2 10-1 5 3 1 0.5 0.3 100 50 30 10 3 3 3 3 100 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Duty cycle ratio DR Forward voltage VF (V) ΔVF/ΔTa – IF 1000 -2.8 Pulse width ≤ 100μs 500 Repetitive 300 Frequency = 100 Hz Ta = 25°C 100 50 30 10 5 3 IFP – VFP -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 Pulse forward current IFP (mA) 0.3 0.5 1 3 5 10 30 50 Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) 1 0 0.4 0.8 1.2 1.6 2.0 2.4 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2007-10-01 TLP628,TLP628−2,TLP628−4 ID – Ta 101 Collector dark current ICEO (μA) 100 VCE = 300 V 200 V 10 -1 100 V 10-2 10 -3 0 20 40 60 80 100 Ambient temperature Ta (°C) IC – VCE 80 Ta = 25°C (mA) 60 5 30 40 20 15 10 20 IF = 5 mA PC(MAX.) Collector current IC 0 0 2 4 6 8 10 Collector-emitter voltage IC – IF 100 50 30 Ta = 25°C VCE = 5 V VCE = 0.4 V VCE (V) IC – VCE (mA) 10 5 3 Sample B 1 0.5 0.3 Sample A 50 50 40 Ta = 25°C Collector current IC Collector current IC (mA) 30 20 25 10 0.1 0.05 0.03 0.3 1 3 10 30 100 5 0 0 IF = 2 mA 0.5 1.0 1.5 Forward current IF (mA) Collector-emitter voltage VCE (V) 6 2007-10-01 TLP628,TLP628−2,TLP628−4 VCE(sat)– Ta 0.20 IF = 5 mA IC = 1 mA 30 IC – Ta Collector-emitter saturation voltage VCE(sat) (V) 0.16 10 0.12 5 mA) 3 0.08 Collector current IC 0.04 1 0.5 0.3 VCE = 5 V 0.1 -20 0 20 40 60 IF = 5 mA 80 100 0 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IC / IF – IF 1000 Current transfer ratio IC/IF (%) Sample A 100 Sample B 10 Ta = 25°C VCE = 5 V VCE = 0.4 V 1 0.3 1 10 100 Forward current IF (mA) Switching Time – RL 1000 IF = 16 mA 500 VCC = 5 V Ta = 25°C 300 tOFF ts 100 Switching time (μs) 50 30 10 5 3 tON 1 1 3 5 10 30 50 100 300 Load resistance RL (kΩ) 7 2007-10-01 TLP628,TLP628−2,TLP628−4 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01
TLP628_07
物料型号: - TLP628 - TLP628-2 - TLP628-4

器件简介: 东芝TLP628, TLP628-2, 和TLP628-4是由砷化镓红外发光二极管与光电晶体管组成的光耦器件。TLP628-2在一个八脚塑料DIP封装中提供两个隔离通道,TLP628-4提供四个隔离通道。

引脚分配: - TLP628: 1. 阳极(Anode) 2. 阴极(Cathode) 3. 发射极(Emitter) 4. 集电极(Collector)

- TLP628-2: 1, 3: 阳极(Anode) 2, 4: 阴极(Cathode) 5, 7: 发射极(Emitter) 6, 8: 集电极(Collector)

- TLP628-4: 1, 3, 5, 7: 阳极(Anode) 2, 4, 6, 8: 阴极(Cathode) 9, 11, 13, 15: 发射极(Emitter) 10, 12, 14, 16: 集电极(Collector)

参数特性: - 集电极-发射极电压:350V(最小值) - 电流传输比:50%(最小值) - 隔离电压:5000Vrms(最小值) - UL认证:UL1577, 文件编号E67349 - BSI批准:BS EN60065:2002, 证书编号7426;BS EN60950-1:2002, 证书编号7427

功能详解: TLP628系列光耦具有高隔离电压和高集电极-发射极击穿电压,适用于需要电气隔离的应用,如可编程控制器的直流输出模块和电信领域。

应用信息: 这些光耦适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。它们不适用于需要极高质量和/或可靠性或其故障可能导致人员伤亡的设备(如原子能控制仪器、飞机或宇宙飞船仪器等)。

封装信息: - TLP628和TLP628-2的重量分别为0.26g和0.54g。 - TLP628-4的重量为1.1g。
TLP628_07 价格&库存

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