TLP631(GR,F)

TLP631,TLP632 TOSHIBA Photocoupler GaAs IRed & Photo-Transistor TLP631, TLP632 Programmable Controllers AC/DC-Input Module Solid State Relay Unit: mm The TOSHIBA TLP631 and TLP632 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP632 has no-base internal connection for high-EMI environments. • Collector-emitter voltage: 55 V (min) • Current transfer ratio: 50% (min) • Isolation voltage: 5000 Vrms (min) Rank GB: 100% (min) • UL recognized: UL1577, file no. E67349 • cUL approved : CSA Component Acceptance Service No. 5A, File No.E67349 TOSHIBA 11-7A8 Weight: 0.4 g (typ.) Pin Configurations (top view) TLP631 TLP632 1 6 1 6 2 5 2 5 3 4 3 4 1: Anode 2: Cathode 3: N.C. 1: Anode 2: Cathode 3: N.C. 4: Emitter 4: Emitter 5: Collector 5: Collector 6: Base 6: N.C Start of commercial production 1983-05 1 2017-05-17 TLP631,TLP632 Current Transfer Ratio Current Transfer Ratio (%) (IC/IF) Classification (Note 1) IF = 5 mA, VCE = 5 V, Ta = 25°C Marking Of Classification Min Max Blank 50 600 Blank, Y■, YE, G, G■, GR, B, BL, GB Rank Y 50 150 YE, Y■ Rank GR 100 300 GR, G, G■ Rank BL 200 600 BL, B Rank GB 100 600 GB, GR, G, G■, BL, B Rank YH 75 150 Y■ Rank GRL 100 200 G Rank GRH 150 300 G■ Rank BLL 200 400 B Note 1: Ex, rank GB: TLP631 (GB) Note: Application type name for certification test, please use standard product type name, i, e. TLP631 (GB): TLP631 TLP632 (GB): TLP632 2 2017-05-17 TLP631,TLP632 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 60 mA ΔIF/°C -0.7 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 70 mW ΔPD/°C -0.82 mW/°C VCEO 55 V Collector-base voltage (TLP631) VCBO 80 V Emitter-collector voltage VECO 7 V Emitter-base voltage (TLP631) VEBO 7 V Collector current IC 50 mA Power dissipation PC 150 mW ΔPC/°C -1.5 mW/°C Storage temperature range Tstg -55 to 125 °C Operating temperature range Topr -55 to 100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW ΔPT/°C -2.5 mW/°C BVS 5000 Vrms Forward current LED Forward current derating (Ta ≥ 39°C) Diode power dissipation derating (Ta ≥39 °C) Detector Collector-emitter voltage Power dissipation derating (Ta ≥ 25°C) Total package power dissipation derating (Ta≥ 25°C) Isolation voltage (AC, 60 s, R.H. ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two terminal device: LED side pins Shorted together and DETECTOR side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr -25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 3 2017-05-17 TLP631,TLP632 Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 ― ― V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V Collector-base breakdown voltage (TLP631) V(BR) CBO IC = 0.1 mA 80 ― ― V Emitter-base breakdown voltage (TLP631) V(BR) EBO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 10 100 nA VCE = 24 V, Ta = 85°C ― 2 50 μA V = 0 V, f = 1 MHz ― 10 ― pF Min Typ. Max Unit 50 ― 600 100 ― 600 ― 60 ― 30 ― ― ― ― 0.4 Collector dark current ICEO Capacitance collector to emitter CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC/IF Saturated CTR IC/IF (sat) Collector-emitter saturation voltage VCE (sat) Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA 4 % % V 2017-05-17 TLP631,TLP632 Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition Min Typ. Max Unit ― 0.8 ― pF 5×1010 1014 ― Ω 5000 ― ― AC, 1 s, in oil ― 10000 ― DC, 60 s, in oil ― 10000 ― Vdc Min Typ. Max Unit ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 15 ― ― 25 ― ― 2 ― ― 12 ― ― 20 ― VS = 0 V, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 60 s Isolation voltage BVS Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time tON Storage time ts Turn-off time tOFF Turn-on time tON Storage time ts Turn-off time tOFF Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ (Fig.1) RBE = OPEN VCC = 5 V, IF = 16 mA RL = 1.9 kΩ (Fig.1) RBE = 220 kΩ (TLP631) VCC = 5 V, IF = 16 mA μs μs μs Fig. 1 Switching time test circuit 5 2017-05-17 TLP631,TLP632 PC– Ta 200 80 160 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 100 60 40 20 0 -20 120 80 40 0 20 40 60 80 100 0 -20 120 0 Ambient temperature Ta (°C) 20 40 Ta = 25°C (mA) 30 500 Forward current IF (mA) IFP Pulse forward current 120 50 Ta = 25°C 1000 300 100 50 30 10 10 5 3 1 0.5 0.3 10-3 10-2 10-1 0.1 0.4 10０ 0.6 0.8 Duty cycle ratio DR ΔVF / ΔTa – IF 1.2 VF 1.4 1.6 (V) IFP – VFP 1000 100 Pulse forward current -2.0 (mA) -2.4 300 IFP 500 -2.8 -1.6 -1.2 -0.8 -0.4 0.1 1.0 Forward voltage -3.2 Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) 100 I F – VF 100 Pulse width ≤ 100μs 3000 80 Ambient temperature Ta (°C) IFP – DR 5000 60 0.3 1 3 Forward current 10 IF 50 30 10 1 0.4 30 (mA) Pulse width ≤ 100μs 5 3 Repetitive frequency = 100 Hz Ta = 25°C 0.8 1.2 1.6 2.0 Pulse forward voltage VF 6 2.4 (V) 2017-05-17 TLP631,TLP632 IC – VCE IC – VCE 80 30 Ta = 25°C Ta = 25°C 40 15 mA 10 mA PC MAX. 20 2 4 6 8 Collector-emitter voltage 20 mA 15 10 mA 10 5 mA IF = 2 mA 0 0 10 0.2 VCE (V) 0.4 IC – IF (%) IC/IF Sample A 10 Sample B 5 Current transfer ratio (mA) IC Collector current 1.0 1.2 1.4 VCE (V) IC/IF – IF 3 1 05 0.3 Ta = 25°C VCE = 5 V 0.1 0.05 0.03 0.3 1 3 10 TLP631 30 100 IF 300 1 Sample B Ta = 25°C 30 VCE = 5 V (μA) 50 kΩ 100 kΩ 500 kΩ VCC IF A 0.5 1 3 Forward current 10 30 IF (mA) 10 30 IPB – IF Ta = 25°C 100 50 VCB = 0 V 30 VCB = 5 V 10 5 3 VCB IF 1 0.5 0.1 0.1 100 A 0.3 1 3 10 Forward current 7 100 (mA) 0.3 R BE 0.3 3 TLP631 300 RBE = ∞ 1 Forward current IF IC –IF at RBE 0.3 0.1 0.1 50 (mA) Base photo current IPB 3 Sample A 100 10 0.3 1000 Ta = 25°C 50 VCE = 5 V 30 5 300 VCE = 0.4 V 100 10 500 VCE = 0.4 V Forward current (mA) 0.8 1000 50 30 IC 0.6 Collector-emitter voltage 100 Collector current 40 mA 30 mA 20 5 IF = 5 mA 0 0 50 mA (mA) 30 mA 20 mA Collector current Collector current IC 50 mA IC (mA) 25 60 30 IF 100 300 (mA) 2017-05-17 TLP631,TLP632 ICEO – Ta VCE(sat) – Ta 0.20 IF = 5 mA IC = 1 mA 10 V Collector-emitter saturation voltage VCE(sat) (V) Collector dark current ICEO (μA) 101 VCE = 24 V 100 5V 10-1 10-2 0.16 0.12 0.08 0.04 0 -40 10 -20 -3 10-4 0 20 40 60 80 100 Ambient temperature Ta (°C) 0 20 40 60 80 100 120 Ambient temperature Ta (°C) TLP631 Switching Time – RL 50 tOFF 30 Switching time (μs) ts 10 Ta = 25°C IF = 16 mA VCC = 5 V 5 RBE = 220 kΩ 3 tON 1 1 3 10 30 Load resistance RL IC – Ta 100 100 (kΩ) VCE = 5 V IF = 25 mA 50 30 TLP631 5 mA 10 Switching Time – RBE 50 tOFF 30 5 (μs) ts 3 Switching time Collector current IC (mA) 10 mA 1 mA 1 0.5 0.5 mA 0.3 0.1 -20 0 20 40 60 80 10 IF = 16 mA Ambient temperature Ta (°C) VCC = 5 V 5 RL = 1.9 kΩ 3 1 100k 100 Ta = 25°C tON 300k 1M 3M ∞ Base-emitter resistance RBE (Ω) 8 2017-05-17 TLP631,TLP632 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 9 2017-05-17