TLP668J

TLP668J(S) TOSHIBA Photocoupler GaAℓAs Ired & Photo-Triac TLP668J(S) Office Machine Household Use Equipment Triac Driver Solid State Relay The TOSHIBA TLP668J(S) consists of a zero voltage crossing turn-on photo-triac optically coupled to a GaAlAs infrared emitting diode in a six lead plastic DIP package. Unit: mm • • • • • • • • Peak off-state voltage: 600V (Min.) Trigger LED current: 3mA (Max.) On-state current: 100mA (Max.) Isolation voltage: 5000Vrms (Min.) UL recognized: UL1577, file No. E67349 BSI approved: BS EN60065:2002, file No. 8385 BS EN60950-1:2002, file No. 8386 SEMCO approved:EN60065,EN60950-1,EN60335-1 Certificate no.708960 Option(D4) type VDE approved: DIN EN 60747-5-2 Certificate No. 40009302 Maximum operating insulation voltage : 890Vpk Highest permissible over voltage : 8000 Vpk JEDEC TOSHIBA 11-7A9 Weight: 0.39 g (Typ.) (Note) When an EN60747-5-2 approved type is needed, please designate the “Option(D4)”. •Construction mechanical rating 7.62 mm pich standard type Creepage distance Clearance Insulation thickness 7.0 mm (Min.) 7.0 mm (Min.) 0.5 mm (Min.) 10.16 mm pich TLPXXXF type 8.0 mm (Min.) 8.0 mm (Min.) 0.5 mm (Min.) Pin configuration (top view) 1 2 3 ZC 6 4 1: Anode 2: Cathode 3: N.C. 4:Terminal 1 6:Terminal 2 ZC:Zero-cross circuit 1 2007-10-01 TLP668J(S) Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta≥25°C) LED Peak forward current (100μs pulse, 100pps) Reverse voltage Junction temperature Off-state output terminal voltage On-state RMS current Detector On-state current derating (Ta≥25°C) Peak on-state current (100μs pulse, 120pps) Peak nonrepetitive surge current Junction temperature Operating temperature range Storage temperature range Lead soldering temperature (10s) Isolation voltage (AC,1min. , R.H. ≤60%) (Note 2) (Pw=10ms,DC=10%) Ta=25°C Ta=70°C Symbol IF ∆IF /°C IFP VR Tj VDRM IT(RMS) ∆IT/°C ITP ITSM Tj Topr Tstg Tsol BVS Rating 30 −0.3 1 5 125 600 100 50 -1.1 2 1.2 110 −40~100 −55~125 260 5000 mA /°C A A °C °C °C °C Vrms Unit mA mA /°C A V °C V mA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 2) Device considered a two terminal device:Pins1,2 and 3 shorted together and pin4 and pin6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Peak on-state current Operating temperature Symbol VAC IF ITP Topr Min. Typ. Max. 240 7.5 1 85 Unit Vac mA A °C — 4.5 — 6 — −10 — — Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP668J(S) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Peak off-state current Peak on-state voltage Detector Holding current Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage Symbol VF IR CT IDRM VTM IH dv/dt dv/dt(c) IF = 10 mA VR = 3 V V = 0, f=1MHz VDRM =600V ITM =100mA — Vin=240Vrms , Ta=85°C Vin=60Vrms , IT=15mA Test Condition Min. 1.2 Typ. 1.4 Max. 1.7 10 — 1000 3.0 Unit V μA pF nA V mA V/μs V/μs — — — — — 200 — 30 10 — 0.6 500 0.2 — — — — Coupled Electrical Characteristics (Ta = 25°C) Characteristic Trigger LED current Inhibit voltage Leakage in inhibited state Capacitance (input to output) Isolation resistance Symbol IFT VIH IIH CS RS Test Condition VT =6V ,Resistive load IF =Rated IFT IF =Rated IFT , VT =rated VDRM VS =0 , f=1MHz VS =500V AC , 1minute Isolation voltage BVS AC , 1second,in oil DC , 1minute,in oil Min. — — — — 1×10 12 Typ. — — 200 0.8 10 14 Max. 3 50 600 — — — — — Unit mA V μA pF Ω Vrms Vdc 5000 — — — 10000 10000 3 2007-10-01 TLP668J(S) 4 2007-10-01 TLP668J(S) 5 2007-10-01 TLP668J(S) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01