TLP715(F)

TLP715 TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP715 Isolated Bus Drivers High Speed Line Receivers Microprocessor System Interfaces Unit: mm 4.58±0.25           1 2 3 H ON ON OFF H L OFF OFF ON VCC 2 GND SHIELD IF 1+ 1: ANODE 6 2: N.C. 5 3: CATHODE 4 5: VO (Output) 4: GND 6: VCC Schematic L 4.0 -0.20 -0.05 Pin Configuration (Top View) Truth Table Output 11-5J1S Weight: 0.26 g (t yp .) 3 Tr2 9.7±0.3 TOSHIBA Note 1 : When a VDE approved type is needed, please designate the Option(D4). Tr1 1.25±0.25 0.4±0.1 1 LED 0.25 +0.10 1.27±0.2 Buffer logic output (totem pole output) Guaranteed performance over temperature: -40 to 100°C Power supply voltage: 4.5 to 20 V Input current: IFLH = 3 mA (max) Switching time ( tpLH / tpHL): 250 ns (max) Common-mode transient immunity: ±10 kV / μs (min) Isolation voltage: 5000 Vrms (min) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved : EN 60747-5-5 , EN 62368-1 (Note 1) Input 7.62±0.25 +0.25 6.8±0.25 4 3.65 +0.15 -0.25 The Toshiba TLP715 consists of an infrared emitting diode and an integrated high-gain, high-speed photodetector. This unit is a 6-pin SDIP. The TLP715 is 50% smaller than the 8-PIN DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The detector has a totem pole output stage to provide both source and sink driving. The detector IC has an internal shield that provides a guaranteed common-mode transient immunity. The TLP715 is buffer logic type. For inverter logic type, the TLP718 is in line-up. 6 5 ICC 6 VCC Tr1 IO VF 3- Tr2 SHIELD 5 4 VO GND Note: 0.1 µF bypass capacitor must be connected between pins 6 and 4. Start of commercial production 2008-11 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-09-25 TLP715 Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT IF 20 mA ΔIF/ΔTa -0.48 mA/°C IFPT 1 A Reverse Voltage VR 5 V Diode power dissipation PD 40 mW ΔPD/°C -0.95 mW/°C Junction Temperature Tj 125 °C Output Current 1 (Ta ≤ 25°C) IO1 25 / -15 mA Output Current 2 (Ta ≤ 100°C) IO2 13 / -13 mA Output Voltage VO -0.5 to 20 V Supply Voltage VCC -0.5 to 20 V PC 75 mW ΔPC / °C -0.75 mW / °C Tj 125 °C Operating Temperature Range Topr -40 to 100 °C Storage Temperature Range Tstg -55 to 125 °C Lead Solder Temperature (10 s) Tsol 260 °C BVS 5000 Vrms Forward Current (Ta ≤ 83°C) Forward Current Derating (Ta ≥ 83°C) LED Peak Transient Forward Current (Note 1) DETECTOR Diode power dissipation derating (Ta ≥ 83°C) Power dissipation Power dissipation derating (Ta ≥ 25°C) Junction Temperature Isolation Voltage (AC,60 s, R.H. ≤ 60 %) (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 1 μs, 300 pps. Note 2: Device Considered a two terminal device: pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Input Current, ON IF(ON) 4.5 - 10 mA Input Voltage, OFF VF(OFF) 0 - 0.8 V VCC 4.5 - 20 V Supply Voltage (Note 1) Topr -40 100 °C Note 1: This item denotes operating ranges, not meaning of recommended operating conditions. Operating Temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-09-25 TLP715 Electrical Characteristics (Unless otherwise specified, Ta =-40 to 100°C, VCC = 4.5 to 20 V) CHARACTERISTIC SYMBOL TEST CIRCUIT VF CONDITION MIN TYP. MAX UNIT - IF = 5 mA , Ta = 25 °C 1.4 1.6 1.7 V ΔVF/ΔTa - IF = 5 mA - -2.0 - mV/°C IR - VR = 5 V , Ta = 25 °C - - 10 μA Input capacitance CT - V = 0 V, f = 1 MHz, Ta = 25 °C - 45 - pF Logic LOW output voltage VOL 1 IOL = 3.5 mA, VF = 0.8 V - 0.2 0.6 V Logic HIGH output voltage VOH (Note 1) 2 IOH = -2.6 mA, IF = 5 mA VCC = 4.5 V 2.7 3.5 - VCC = 20 V 17.4 19 - Logic LOW supply current ICCL 3 VF = 0 V - - 3.0 mA Logic HIGH supply current ICCH 4 IF = 5 mA - - 3.0 mA Logic LOW short circuit output current (Note 2) IOSL 5 VF = 0 V VCC = VO = 5.5 V 15 80 - VCC = VO = 20 V 20 90 - Logic HIGH short circuit output current (Note2) IOSH 6 IF = 5 mA, VCC = 5.5 V VO = GND VCC = 20 V -5 -15 - -10 -20 - IFLH - IO = -2.6 mA, VO > 2.4 V - 0.4 3 mA VFHL - IO = 3.5 mA, VO < 0.6V 0.8 - - V IHYS - VCC = 5 V - 0.05 - mA Input forward voltage Temperature coefficient of f d lt Input reverse current Input current logic HIGH t t Input voltage logic LOW t t Input current hysteresis V mA mA Note: All typical values are at Ta = 25 °C, VCC = 5 V. Note : A ceramic capacitor (0.1 μF) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. Note 1: VOH = VCC –VO [V] Note 2: Duration of output short circuit time should not exceed 10 ms. Isolation Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT - 1.0 - pF Capacitance input to output CS VS = 0 V, f = 1 MHz Isolation resistance RS R.H. ≤ 60 %, VS = 500 V 1012 1014 - Ω Isolation voltage BVS AC, 60 s 5000 - - Vrms Note : Device Considered a two terminal device: pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-09-25 TLP715 Switching Characteristics (Unless otherwise specified, Ta = -40 to 100°C, VCC = 4.5 to 20 V) CHARACTERISTIC SYMBOL Propagation delay time to logic HIGH output Propagation delay time to logic LOW output TEST CIRCUIT CONDITION MIN TYP. * MAX UNIT tpLH IF = 0 → 3 mA 30 120 250 ns tpHL IF = 3 → 0 mA 30 120 250 ns - - 220 ns 7 Switching time dispersion |tpLH-tpHL| between ON and OFF - 8 Rise Time (10 – 90 %) tr IF = 0 → 3 mA, VCC = 5 V - 30 - ns Fall Time (90 – 10 %) tf IF = 3 → 0 mA, VCC = 5 V - 30 - ns 10000 - - V/μs -10000 - - V/μs Common-mode transient VCM = 1000 Vp-p, IF = 5 mA, CMH Immunity at HIGH level output VCC = 20 V, Ta = 25 °C 9 Common-mode transient VCM = 1000 Vp-p, IF = 0 mA, CML Immunity at LOW level output VCC = 20 V, Ta = 25 °C *All typical values are at Ta = 25°C. TEST CIRCUIT 1: VOL VF VCC 1 2 3 TEST CIRCUIT 2: VOH IF → 6 5 SHIELD GND V VCC 1 0.1μF VOL IOL ↑ VCC ↑ 6 2 GND 4 3 SHIELD 5 V VO ↑ IOH VCC 0.1μF 4 VOH=VCC –VO [V] TEST CIRCUIT 3: ICCL VCC 1 6 2 3 GND SHIELD 5 TEST CIRCUIT 4: ICCH ICCL A 0.1μF IF → 1 VCC ↑ 3 TEST CIRCUIT 5: IOSL 1 2 3 5 A VCC 0.1μF SHIELD 4 TEST CIRCUIT 6: IOSH IF → 6 5 SHIELD 2 6 ICCH GND 4 VCC VCC GND 0.1μF ↑ A IOSL VCC 1 VO VCC 5 GND 4 © 2019 Toshiba Electronic Devices & Storage Corporation 2 6 3 4 SHIELD 0.1μF A IOSH VO VCC 4 2019-09-25 TLP715 TEST CIRCUIT 7: Switching Time Test Circuit IF=3 mA(P.G) (f=50 kHz, duty=50%, less than tr = tf = 5ns) IF VCC 0.1μF SHIELD 50% IF tp LH VCC VO tp HL 90% GND CL VOH 90% 1.3V 10% VO 1.3V 10% tr VOL tf CL: stray capacitance of probe and wiring (to 15 pF) TEST CIRCUIT 8: Switching Time Test Circuit IF=3 mA(P.G) (f=50 kHz, duty=50%, less than tr = tf = 5ns) VCC VO 5V IF VCC 620Ω 50% IF tp LH 0.1μF tp HL VOH GND CL SHIELD 5kΩ 1.3V 1.3V VO VOL CL: stray capacitance of probe and wiring (to 15 pF) TEST CIRCUIT 9: Common-Mode Transient Immunity Test Circuit IF → SW A B 6 1 VCC 2 5 3 SHIELD GND 0.1μF 4 VCM + 1000V 90% VO VCM 10% tr tf VCC ・SW A: I F =5mA 17V VO - CMH 1V CML ・SW B: I F =0mA 800( V ) CM = L t (µs) r 800( V ) CM = − H t f (µs) Note: CMH (CML) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the high (low) state. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-09-25 TLP715 EN 60747-5-5 Option (D4) Specification Types : TLP715 Type designations for “option: (D4)”, which are tested under EN 60747 requirements. Ex.: TLP715 (D4-TP,F) D4 : EN 60747 option TP : Standard tape & reel type F : [[G]]/RoHS COMPATIBLE (Note 1) Note: Use TOSHIBA standard type number for safety standard application. Ex.: TLP715 (D4-TP,F) → TLP715 Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. EN 60747 Isolation Characteristics Description Symbol Rating Unit Application classification for rated mains voltage≤300Vrms for rated mains voltage≤600Vrms I-IV I-III Climatic classification Pollution degree TLPxxx type Maximum operating insulation voltage TLPxxxFtype TLPxxx type Input to output test voltage, method A Vpr=1.6×VIORM, type and sample test tp=10 s, partial discharge