TLP718
TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC
TLP718
Isolated Bus Drivers
High Speed Line Receivers
Microprocessor System Interfaces
Unit: mm
4.58±0.25
4
1 2
3
−0.05
1.27±0.2
Inverter logic type (totem pole output)
Guaranteed performance over temperature : −40 to 100°C
Power supply voltage : 4.5 to 20 V
Input current: IFHL = 3 mA (max)
Switching time ( tpHL / tpLH) : 250 ns (max)
Common-mode transient immunity : ±10 kV/μs (min)
Isolation voltage : 5000 Vrms (min)
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A
9.7±0.3
TOSHIBA
11-5J1S
Weight: 0.26 g (typ.)
Pin Configuration (Top View)
1
VCC
6
1: ANODE
2: N.C.
File No.E67349
+0.25
1.25±0.25
0.4±0.1
4.0 −0.20
7.62±0.25
0.25± +0.10
The Toshiba TLP718 consists of an infrared emitting diode and an integrated
high-gain, high-speed photodetector. This unit is a 6-pin SDIP. The TLP718 is
50% smaller than the 8-PIN DIP and meets the reinforced insulation class
requirements of international safety standards. Therefore the mounting area can
be reduced in equipment requiring safety standard certification.
The detector has a totem pole output stage to provide both source and sink
driving. The detector IC has an internal shield that provides a guaranteed
common-mode transient immunity of 10 kV/μs.
The TLP718 is inverter logic type. For buffer logic type, the TLP715 is in lineup.
3.65 +0.15
−0.25
6.8±0.25
6 5
2
VDE-approved: EN 60747-5-5 , EN 62368-1 (Note1)
5
3: CATHODE
4: GND
GND
3
SHIELD
4
5: VO (Output)
6: VCC
Note 1 : When a VDE approved type is needed,
Schematic
ICC
please designate the Option(D4).
VCC
Construction Mechanical Rating
IF
7.62 mm pitch
standard type
10.16 mm pitch
TLPXXXF type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
Creepage Distance
Clearance
Insulation Thickness
6 (Note)
Tr1
1+
IO
VF
VO
3-
5
Tr2
GND
SHIELD
Truth Table
Input
LED
Tr1
Tr2
Output
H
ON
OFF
ON
L
L
OFF
ON
OFF
H
4
Note: 0.1 μF bypass capacitor must be connected
between pins 6 and 4.
Start of commercial production
2008-12
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-06-03
TLP718
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
IF
20
mA
ΔIF/ΔTa
−0.48
mA/°C
IFPT
1
A
Reverse Voltage
VR
5
V
Input power dissipation
PD
40
mW
ΔPD/ΔTa
-0.96
mW/℃
Tj
125
°C
Output Current 1 (Ta ≤ 25°C)
IO1
25 / −15
mA
Output Current 2 (Ta ≤ 100°C)
IO2
13 / −13
mA
Output Voltage
VO
−0.5 to 20
V
Supply Voltage
VCC
−0.5 to 20
V
PO
75
mW
ΔPO/ΔTa
−0.75
mW / °C
Tj
125
°C
Operating Temperature Range
Topr
−40 to 100
°C
Storage Temperature Range
Tstg
−55 to 125
°C
Lead Solder Temperature (10 s)
Tsol
260
°C
BVS
5000
Vrms
Forward Current
(Ta ≤ 83°C)
(Ta ≥ 83°C)
Forward Current Derating
LED
Peak Transient Forward Current
(Note 1)
Input power dissipation derating (Ta ≥ 83°C)
DETECTOR
Junction Temperature
Output power dissipation
Output power dissipation derating （Ta ≥ 25°C）
Junction Temperature
Isolation Voltage (AC, 60 s, R.H. ≤ 60 %)
(Note 2)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width PW ≤ 1 μs, 300 pps.
Note 2: Device Considered a two terminal device: pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together.
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL
MIN
TYP.
MAX
UNIT
Input Current, ON
IF (ON)
4.5
−
10
mA
Input Voltage, OFF
VF (OFF)
0
−
0.8
V
VCC
4.5
−
20
V
Topr
-40
−
100
°C
Supply Voltage
Operating Temperature
(Note 1)
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
Note 1: This item denotes operating ranges, not meaning of recommended operating conditions.
© 2019
Toshiba Electronic Devices & Storage Corporation
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TLP718
Electrical Characteristics
(Unless otherwise specified, Ta = −40 to 100°C, VCC = 4.5 to 20 V)
CHARACTERISTIC
SYMBOL
TEST
CIRCUIT
VF
CONDITION
MIN
TYP.
MAX
UNIT
―
IF = 5 mA, Ta = 25 °C
1.4
1.6
1.7
V
ΔVF/ΔTa
―
IF = 5 mA
―
−2.0
―
mV/°C
Input reverse current
IR
―
VR = 5 V, Ta = 25 °C
―
―
10
μA
Input capacitance
CT
―
V = 0 V, f = 1 MHz, Ta = 25 °C
―
45
―
pF
Logic LOW output voltage
VOL
Figure 1 IOL = 3.5 mA , IF = 5 mA
―
0.2
0.6
V
VOH
Figure 2
Input forward voltage
Temperature coefficient of
forward voltage
Logic HIGH output voltage
(Note 1)
IOH = −2.6 mA,
VCC = 4.5 V
2.7
3.5
―
VF = 0.8 V
VCC = 20 V
17.4
19
―
V
Logic LOW supply current
ICCL
Figure 3 IF = 5 mA
―
―
3.0
mA
Logic HIGH supply current
ICCH
Figure 4 VF = 0 V
―
―
3.0
mA
VCC = VO = 5.5 V
15
80
―
IOSL
Figure 5 IF = 5 mA
VCC = VO = 20 V
20
90
―
VCC = 5.5 V
−5
-15
―
VO = GND VCC = 20 V
−10
−20
―
Logic
LOW
short
output current
circuit
(Note 2)
Logic HIGH short circuit
output current
(Note 3)
Input current logic
LOW
output
Input voltage logic HIGH
output
Input current hysteresis
VF = 0 V,
mA
IOSH
Figure 6
IFHL
―
IO = 3.5 mA, VO < 0.6 V
―
0.4
3
mA
VFLH
―
IO = −2.6 mA, VO > 2.4 V
0.8
―
―
V
IHYS
―
VCC = 5 V
―
0.05
―
mA
mA
Note: All typical values are at Ta = 25 °C, VCC = 5 V unless otherwise specified.
Note 1: VOH = VCC –VO [V]
Note 2: Duration of output short circuit time should not exceed 10 ms.
Note 3: A ceramic capacitor (0.1 μF) should be connected from pin 6 to pin 4 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead
length between capacitor and coupler should not exceed 1 cm.
Isolation Characteristics (Ta = 25°C)
CHARACTERISTIC
Capacitance input to output
Isolation resistance
Isolation voltage
SYMBOL
TEST CONDITION
CS (Note 1)
VS = 0 V, f = 1 MHz
RS (Note 1)
R.H. ≤ 60 %, VS = 500 V
BVS (Note 1)
AC, 60 s
MIN
TYP.
MAX
UNIT
―
1.0
―
pF
1×1012
1014
―
Ω
5000
―
―
Vrms
Note : This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
© 2019
Toshiba Electronic Devices & Storage Corporation
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TLP718
Switching Characteristics
(Unless otherwise specified, Ta = −40 to 100°C, VCC = 4.5 to 20 V)
CHARACTERISTIC
SYMBOL
Propagation delay time
to logic HIGH output
Propagation delay time
to logic LOW output
TEST
CIRCUIT
CONDITION
MIN
TYP.
MAX
UNIT
tpLH
IF = 3 → 0 mA
30
120
250
ns
tpHL
IF = 0 → 3 mA
30
120
250
ns
―
―
220
ns
Figure 7,
Switching time dispersion
|tpHL-
between ON and OFF
tpLH|
Rise Time (10 – 90 %)
tr
IF = 3 → 0 mA, VCC = 5 V
―
30
―
ns
Fall Time (90 – 10 %)
tf
IF = 0 → 3 mA, VCC = 5 V
―
30
―
ns
10000
―
―
V/μs
−10000
―
―
V/μs
Common-mode transient
―
Figure 8
VCM = 1000 Vp-p, IF = 0 mA,
CMH
Immunity at HIGH level output
VCC = 20 V, Ta = 25 °C
Figure 9
Common-mode transient
VCM = 1000 Vp-p, IF = 5 mA,
CML
Immunity at LOW level output
VCC = 20 V, Ta = 25 °C
Note: All typical values are at Ta = 25 °C.
Figure 2: VOH TEST CIRCUIT
Figure 1: VOL TEST CIRCUIT
IF
→
VCC
VCC
6
1
0.1 μF
1
↑
2
5
GND
3
SHIELD
V
VOH
6
V
VF
VOL IOL
↑
Vcc
↑
IOH
Vcc
2
0.1 μF
5
GND
SHIELD
3
4
4
VOH = VCC –VO [V]
Figure 3: ICCL TEST CIRCUIT
IF
→
Figure 4: ICCH TEST CIRCUIT
ICCL
A
VCC
1
6
A
1
6
2
5
Vcc
Vcc
↑
2
5
GND
3
SHIELD
ICCH
VCC
0.1 μF
0.1 μF
GND
SHIELD
3
4
Figure 5: IOSL TEST CIRCUIT
4
Figure 6: IOSH TEST CIRCUIT
IF
→
VCC
VCC
1
6
↑
1
0.1 μF
A
2
5
IOSL
GND
3
SHIELD
Vcc
0.1 μF
A
2
5
Vo
IOSH
Vo
Vcc
GND
3
4
© 2019
Toshiba Electronic Devices & Storage Corporation
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4
SHIELD
4
2019-06-03
TLP718
Figure 7: Switching Time Test Circuit
IF = 3 mA(P.G)
(f = 50 kHz , duty = 50%
less than tr = tf = 5ns)
IF
Vcc
50%
0.1 μF
IF
Vcc
Vo
tp HL
Vo
GND
VOH
90%
90%
CL
SHIELD
tp LH
1.3 V
10%
1.3 V
10%
tf
VOL
tr
CL: stray capacitance of probe and wiring (to 15 pF)
Figure 8: Switching Time Test Circuit
IF = 3 mA(P.G)
(f = 50 kHz , duty = 50%
less than tr = tf = 5ns)
Vcc
Vo
5V
IF
50%
Vcc
IF
620 Ω
0.1μF
Vo
VOH
GND
CL
SHIELD
5kΩ
1.3 V
VOL
tp LH
tp HL
CL: stray capacitance of probe and wiring (to 15 pF)
Figure 9: Common-Mode Transient Immunity Test Circuit
IF
→
SW
A
B
1000 V
6
1
90%
Vcc
2
5
0.1μF
VCM
Vo
tr
tf
Vcc
3
GND
4
・SW A : I F = 0 mA
SHIELD
CMH
17 V
Vo
VCM
+
10%
・SW B : I F = 5 mA
-
800( V )
CM =
H t (µs)
r
1V
CML
800( V )
CM = −
L
t f (µs)
CMH (CML) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output
voltage in the high (low) state.
© 2019
Toshiba Electronic Devices & Storage Corporation
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TLP718
EN 60747-5-5 Option:(D4)
Types
: TLP718, TLP718F
Type designations for “option: (D4)”, which are tested under EN 60747 requirements.
Ex.: TLP718 (D4-TP,F)
D4 : EN 60747 option
TP : Standard tape & reel type
F : [[G]]/RoHS COMPATIBLE (Note 1)
Note: Use TOSHIBA standard type number for safety standard application.
Ex.: TLP718 (D4-TP,F) → TLP718
Note 1 : Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
EN 60747 Isolation Characteristics
Description
Symbol
Rating
Unit
Application classification
for rated mains voltage ≤ 300 Vrms
for rated mains voltage ≤ 600 Vrms
I-IV
I-III
Climatic classification
Pollution degree
TLPxxx type
Maximum operating insulation voltage
2
—
Vpk
1140
TLPxxx type
1424
Vpr
TLPxxxF type
Vpk
1824
TLPxxx type
Input to output test voltage, method B
Vpr = 1.875×VIORM, 100% production test
tp = 1 s, partial discharge < 5 pC
1670
Vpr
TLPxxxF type
Highest permissible overvoltage
(transient overvoltage, tpr = 60 s)
Safety limiting values (max permissible ratings in case of
fault, also refer to thermal derating curve)
current (input current IF, Psi = 0)
power (output or total power dissipation)
temperature
VIO = 500 V, Ta = 25°C
VIO = 500 V, Ta = 100°C
VIO = 500 V, Ta = Tsi
© 2019
Toshiba Electronic Devices & Storage Corporation
—
890
TLPxxxF type
Insulation resistance,
40 / 100 / 21
VIORM
Input to output test voltage, method A
Vpr = 1.6×VIORM, type and sample test
tp = 10 s, partial discharge < 5 pC
6
—
Vpk
2140
VTR
8000
Vpk
Isi
Psi
Tsi
300
700
150
mA
mW
°C
Rsi
≥1012
≥1011
≥109
Ω
2019-06-03
TLP718
Insulation Related Specifications
7.62 mm pitch
TLPxxx type
10.16 mm pitch
TLPxxxF type
Minimum creepage distance
Cr
7.0 mm
8.0 mm
Minimum clearance
Cl
7.0 mm
8.0 mm
Minimum insulation thickness
ti
0.4 mm
CTI
175
Comperative tracking index
Note: If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this
value. If this is not permissible, the user shall take suitable measures.
Note: This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
Marking on product for EN 60747
:
4
Marking Example:
6
4
Lot.Code
P718
Type name without “TL”
4
Mark for option(D4)
1
3
1pin indication
Note: The above marking is applied to the photocouplers that have been qualified according to option (D4) of
EN 60747.
© 2019
Toshiba Electronic Devices & Storage Corporation
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TLP718
Figure
1
Partial discharge measurement procedure according to EN 60747
Destructive test for qualification and sampling tests.
Method A
(for type and sampling tests,
destructive tests)
t1, t2
t3, t4
tp(Measuring time for
partial discharge)
tb
tini
Figure
2
VINITIAL(8 kV)
V
Vpr(1424 V for TLPxxx)
(1824 V for TLPxxxF)
= 1 to 10 s
=1s
VIORM(890 V for TLPxxx)
(1140 V for TLPxxxF)
= 10 s
= 12 s
= 60 s
0
t1
tini
t3
tP
t2
tb
Partial discharge measurement procedure according to EN 60747
Non-destructive test for100% inspection.
Method B
Vpr(1670 V for TLPxxx)
(2140 V for TLPxxxF)
V
(for sample test,nondestructive test)
t3, t4
tp(Measuring time for
partial discharge)
tb
VIORM(890 V for TLPxxx)
(1140 V for TLPxxxF)
= 0.1 s
=1s
= 1.2 s
Isi
(mA)
3
t
tP
t3
Figure
t
t4
tb
t4
Dependency of maximum safety ratings on ambient temperature
500
1000
400
800
300
600
Psi
(mW)
400
200
Psi
Isi
100
200
0
0
25
50
75
100
125
150
0
175
Ta (°C)
© 2019
Toshiba Electronic Devices & Storage Corporation
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TLP718
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical
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control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE
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except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of
Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled
substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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