TLP734

TLP733,TLP734 TOSHIBA Photocoupler GaAs Ired&Photo−Transistor TLP733, TLP734 Office Machine Household Use Equipment Solid State Relay Switching Power Supply The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. • • • • Collector−emitter voltage: 55 V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) UL recognized: UL1577, file no. E67349 BSI approved: BS EN60065: 1994 Certificate no. 7364 BS EN60950: 1992 Certificate no. 7365 • • • SEMKO approved: SS4330784 Certificate no. 9325163, 9522142 Isolation voltage: 4000 Vrms (min.) Option (D4) type VDE approved: DIN VDE0884 / 06.92, Certificate no. 74286, 91808 Maximum operating insulation voltage: 630, 890 VPK Highest permissible over voltage: 6000, 8000 VPK (Note) When a VDE0884 approved type is needed, please designate the “Option (D4)” 1 Unit in mm TOSHIBA Weight: 0.42 g 11−7A8 Pin Configurations (top view) TLP733 6 5 4 1 2 3 TLP734 6 5 4 • Creepage distance Clearance Insulation thickness 7.62 mm pich standard type : 7.0 mm (min.) : 7.0 mm (min.) : 0.5 mm (min.) 10.16 mm pich TLP×××F type 8.0 mm (min.) 8.0 mm (min.) 4.0 mm (min.) 0.5 mm (min.) 2 3 Internal creepage path : 4.0 mm (min.) 1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base 1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc 1 2002-09-25 TLP733,TLP734 Current Transfer Ratio Type Classi− fication *1 (None) TLP733 TLP734 Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min. 50 50 Rank GR 100 200 Rank GB 100 Max. 600 150 300 600 600 Blank, Y, Y , G, G , B, B , GB Y, Y ■ ■ ■ ■ ■ Marking Of Classification G, G B, B ■ ■ ■ G, G , B, B , GB *1: Ex. rank GB: TLP733 (GB) Note: Application type name for certification test, please use standard product type name, i.e. TLP733 (GB): TLP733 Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 39°C) LED Peak forward current (100 μs pulse, 100 pps) Reverse voltage Junction temperature Collector−emitter voltage Collector−base voltage (TLP733) Emitter−collector voltage Detector Emitter−base voltage (TLP733) Collector current Power dissipation Power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1 min., R.H.≤ 60%) Symbol IF ΔIF / °C IFP VR Tj VCEO VCBO VECO VEBO IC PC ΔPC / °C Tj Tstg Topr Tsol PT ΔPT / °C BVS Rating 60 −0.7 1 5 125 55 80 7 7 50 150 −1.5 125 −55~125 −40~100 260 250 −2.5 4000 Unit mA mA / °C A V °C V V V V mA mW mW / °C °C °C °C °C mW mW / °C Vrms 2 2002-09-25 TLP733,TLP734 Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. ― ― ― −25 Typ. 5 16 1 ― Max. 24 25 10 85 Unit V mA mA °C Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector−base breakdown voltage Emitter−base breakdown voltage Detector (TLP733) (TLP733) Symbol VF IR CT V(BR)CEO V(BR)ECO V(BR)CBO V(BR)EBO Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA IC = 0.1 mA IE = 0.1 mA VCE = 24 V Collector dark current ICEO VCE = 24 V Ta = 85°C (ambient light below 1000 ℓx) (ambient light below 1000 ℓx) Min. 1.0 ― ― 55 7 80 7 ― ― ― ― ― ― Typ. 1.15 ― 30 ― ― ― ― 0.01 (2) 2 (4) 0.5 0.1 400 10 Max. 1.3 10 ― ― ― ― ― 0.1 (10) 50 (50) 10 ― ― ― Unit V μA pF V V V V μA μA μA nA ― pF Collector dark current (TLP733) Collector dark current (TLP733) DC forward current gain (TLP733) Capacitance collector to emitter ICER ICBO hFE CCE VCE = 24 V, Ta = 85°C RBE = 1MΩ VCB = 10 V VCE = 5 V, IC = 0.5 mA V = 0, f = 1 MHz 3 2002-09-25 TLP733,TLP734 Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IF = 5 mA, VCB = 5 V IC = 2.4 mA, IF = 8 mA VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB MIn. 50 100 — 30 — — — — Typ. — — 60 — 10 — 0.2 — Max. 600 600 — — — 0.4 — 0.4 V Unit % Saturated CTR Base photo−current Collector−emitter saturation voltage IC / IF (sat) IPB % % Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H.≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. — 1×10 12 Typ. 0.8 10 14 Max. — — — — — Unit pF Ω Vrms Vdc 4000 — — — 10000 10000 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf tON tOFF tON tS tOFF tON tS tOFF RL = 1.9 kΩ RBE = open VCC = 5 V, IF = 16 mA RL = 1.9 kΩ RBE = 220 kΩ (TLP733) VCC = 5 V, IF = 16 mA (Fig.1) VCC = 10 V, IC = 2 mA RL = 100Ω Test Condition Min. — — — — — — — (Fig.1) — — — Typ. 2 3 3 3 3 40 90 3 30 60 Max. — — 10 10 — — — — — — μs μs μs Unit 4 2002-09-25 TLP733,TLP734 Fig. 1 Switching time test circuit IF IF VCC RL RBE VCE VCE ts 4.5V 0.5V tON tOFF 5 2002-09-25 TLP733,TLP734 IF – Ta 100 200 PC – Ta Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 80 160 60 120 40 80 20 40 0 −20 0 20 40 60 80 100 120 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 3000 Pulse width ≤ 100 μs Ta = 25°C 100 Ta = 25°C 50 30 IF – V F Pulse forward current IFP (mA) 500 300 (mA) Forward current IF 1 0 −3 3 1 0 −2 3 10−1 3 10 0 1000 10 5 3 100 50 30 1 0.5 0.3 10 3 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) ∆VF / ∆Ta – IF −2.8 1000 IFP – VFP 500 300 Forward voltage temperature coefficient ∆VF / ∆Ta (mV / °C) −2.0 Pulse forward current IFP (mA) −2.4 100 50 30 −1.6 −1.2 −0.8 10 5 3 Pulse width ≤ 10 μs Repetitive frequency = 100 Hz Ta = 25°C −0.4 0.1 0.3 1 3 10 30 50 1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Forward current IF (mA) Pulse forward voltage VF (V) 6 2002-09-25 TLP733,TLP734 IC – VCE 50 50 mA Ta = 25°C 30 Ta = 25°C IC – VCE 50 mA 40 mA 30 mA 20 20 mA 15 10 mA 10 5 mA 5 IF = 2 mA (mA) 30 mA 20 mA Collector current IC 30 15 mA 20 10 mA PC (MAX.) 10 IF = 5 mA 0 0 Collector current IC 10 (mA) 40 25 2 4 6 8 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – IF 1000 30 IC / IF – IF Ta = 25°C VCE = 5 V VCE = 0.4 V SAMPLE A IC / IF (%) Current transfer ratio Ta = 25°C VCE = 5 V VCE = 0.4 V (mA) 10 3 1 500 300 SAMPLE A Collector current IC 100 0.3 0.1 0.03 0.01 0.1 SAMPLE B 50 30 SAMPLE B 0.3 1 3 10 30 100 300 10 0.1 0.3 1 3 10 30 100 Forward current IF (mA) Forward current IF (mA) TLP733 100 Ta = 25°C 50 VCE = 5 V IC – IF at RBE 1000 300 100 30 10 3 1 0.3 TLP733 Ta = 25°C IPB – IF Collector current IC 10 RBE=∞ 50kΩ 1 100kΩ 500kΩ 0.3 3 IF VCC A Base photo current IPB (μA) (mA) 30 IF VCB = 0 V VCB = 5 V VCB RBE 0.3 1 3 10 30 100 A 0.3 1 3 10 30 100 0.1 0.1 0.1 0.1 Forward current IF (mA) Forward current IF (mA) 7 2002-09-25 TLP733,TLP734 ICEO / Ta Ambient light 101 Below = 0 ℓx 0.24 IF = 5 mA IC = 1 mA VCE (sat) – Ta VCE = 24 V 100 Collector-emitter saturation voltage VCE (sat) (V) 0.20 0.16 (μA) 10 V 5V 0.12 Collector dark current ICEO 10−1 0.08 0.04 −40 10 −2 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 10−3 TLP733 100 tOFF 10−4 0 20 40 60 80 100 120 50 Switching Time – RL ts (μs) Ambient temperature Ta (°C) 30 SWITCHING TIME 10 Ta = 25°C IF = 16 mA VCC = 5 V RBE = 220kΩ 5 3 tON 1 1 3 5 10 30 50 100 300 IC – Ta 100 50 30 IF = 25 mA VCE = 5 V Load resistance RL (kΩ) 10 mA (mA) 10 5 3 5 mA Collector current IC 1 0.5 1 mA 0.5 mA 0.3 0.1 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 8 2002-09-25 TLP733,TLP734 Switching Time 50 30 tOFF ts RBE Ta = 25°C 3000 I = 16 mA F VCC = 5 V 1000 Switching Time – RL Switching time (μs) Switching time (μs) 300 100 30 10 3 tOFF ts 10 5 3 tON Ta = 25°C IF = 16 mA VCC = 5 V RL = 1.9kΩ tON 1 100k 300k 1M 3M ∞ 1 1 3 5 10 30 50 100 Base emitter resistance RBE (Ω) Load resistance RL (kΩ) 9 2002-09-25 TLP733,TLP734 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2002-09-25