0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
TLP748J(F)

TLP748J(F)

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    6-DIP(0.300",7.62mm)

  • 描述:

    OPTOISOLATOR 4KV SCR 6DIP

  • 数据手册
  • 价格&库存
TLP748J(F) 数据手册
TLP748J TOSHIBA Photocoupler IRED & Photo-Thyristor TLP748J Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit: mm The TOSHIBA TLP748J consists of a photo−thyristor optically coupled to an infrared emitting diode in a six lead plastic DIP package. • Peak OFF−state voltage: 600 V (min) • Trigger LED current: 10 mA (max) • ON−state current: 150 mA (max) • Isolation voltage: 4000 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 JEDEC ― • VDE-approved: EN 60747-5-5 JEITA ― (Note 1) TOSHIBA Note 1 : When a VDE approved type is needed, Weight: 0.42 g (typ.) please designate the Option(D4). • Pin Configuration (top 7.62 mm pitch standard type 7.0 mm (min) 10.16 mm pitch TLPxxxxF type 8.0 mm (min) Clearance: 7.0 mm (min) 8.0 mm (min) Insulation thickness: 0.4 mm (min) 0.4 mm (min) Creepage distance: 11−7A8 1 6 2 5 3 4 view) 1 : ANODE 2 : CATHODE 3 : N.C. 4 : CATHODE 5 : ANODE 6 : GATE Start of commercial production 2008-12 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-10 TLP748J Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C −0.7 mA / °C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 100 mW -1.4 mW/°C Peak forward voltage (RGK = 27 kΩ) △PD /°C VDRM 600 V Peak reverse voltage (RGK = 27 kΩ) VRRM 600 V ON−state current IT(RMS) 150 mA ON−state current derating (Ta ≥ 25°C) ΔIT / °C −2.0 mA / °C ITP 3 A Peak one cycle surge current ITSM 2 A Peak reverse gate voltage VGM 5 V Output power dissipation PO 150 mW ΔPO / °C −1.5 mW / °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 4000 Vrms Forward current LED Forward current derating (Ta ≥ 53 °C) Detector Diode power dissipation derating (Ta ≥ 53°C) Peak ON−state current (100 μs pulse, 120 pps) Output power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 60 s, R.H.≤ 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device Considered a two terminal device: pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VAC ― ― 240 Vac Forward current IF 15 ― 25 mA Operating temperature Topr −25 ― 85 °C Gate to cathode resistance RGK ― 10 27 kΩ Gate to cathode capacity CGK ― 0.01 0.1 μF Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-10 TLP748J Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT VF = 0 V, f = 1 MHz ― 30 ― pF VAK = 600 V, RGK = 27 kΩ ― ― 5 μA OFF−state current IDRM Reverse current IRRM VKA = 600 V, RGK = 27 kΩ ― ― 5 μA ON−state voltage VTM ITM = 100 mA ― ― 1.45 V IH RGK = 27 kΩ ― ― 1 mA VAK = 420 V, RGK = 27 kΩ 5 ― ― V/μs Anode to gate ― 5 ― Gate to cathode ― 500 ― Min Typ. Max Unit Holding current OFF−state dv / dt dv / dt Capacitance Cj V = 0 V, f = 1 MHz pF Coupled Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Trigger LED current IFT VAK = 6 V, RGK = 27 kΩ ― ― 10 mA Turn−on time tON IF = 30 mA, VAA = 50 V RGK = 27 kΩ ― 15 ― μs Capacitance (input to output) CS VS = 0 V, f = 1 MHz ― 0.8 ― pF Isolation resistance RS VS = 500 V, R.H.≤ 60 % 1×1012 1014 ― Ω Isolation voltage BVS AC, 60 s 4000 ― ― Vrms © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-10 TLP748J I F ─ Ta I T(RMS) ─ Ta 80 R.M.S. ON-STATE CURRENT IT(RMS) (mA) ALLOWABLE FORWARD CURRENT IF (mA) 100 60 40 20 0 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta(°C) AMBIENT TEMPERATURE Ta(°C) I F ─V F 3000 Pulse width ≤ 100μs Ta = 25°C FORWARD CURRENT IF (mA) ALLOWABLE PULSE FORWARD CURRENT IFP (mA) IFP- DR 1000 500 300 100 50 30 10 3 10-3 3 10-2 3 10-1 3 100 DUTY CYCLE RAITO DR FORWARD VOLTAGE VF (V) IFP -VFP FORWARD VOLTAGE TEMPERATURE COEFFICIENT ΔVF/ΔTa(mV/°C) PULSE FORWARD CURRENT IFP (mA) Δ V F/ Δ Ta - I F FORWARD CURRENT IF (mA) 1000 500 300 100 50 30 10 Pulse width ≤ 10μs 5 Repetitive 3 frequency = 100Hz Ta = 25°C 1 0.6 1.0 1.4 1.8 2.2 2.6 PULSE FORWARD VOLTAGE VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 4 2019-06-10 Toshiba Electronic Devices & Storage Corporation TLP748J I H ─ Ta IFT-Ta 2.0 HOLDING CURRENT IH (mA) TRIGGER LED CURRENT IFT (mA) 20 10 9 8 7 6 5 VAK = 6V RGK = 27kΩ RL = 100Ω 4 3 -40 -20 0 20 40 60 80 AMBIENT TEMPERATURE Ta(°C) 1.0 SPL B 0.5 SPL A 0.1 -40 100 RGK = 27kΩ -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta(°C) V TM- Ta ON-STATE VOLTAGE VTM (V) 1.4 ITM = 100mA 1.2 ITM = 50mA 1.0 ITM = 10mA ITM = 1mA 0.8 0.6 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta(°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-10 TLP748J EN 60747-5-5 Option (D4) Specification Types : TLP748J Type designations for “option: (D4)”, which are tested under EN 60747 requirements. Ex.: TLP748J (D4,F) D4 : EN 60747 option F : [[G]]/RoHS COMPATIBLE (Note 1) Note: Use TOSHIBA standard type number for safety standard application. Ex.: TLP748J (D4,F) → TLP748 Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. EN 60747 Isolation Characteristics Description Symbol Rating Unit Application classification for rated mains voltage≤300Vrms for rated mains voltage≤600Vrms I-IV I-III Climatic classification Pollution degree TLPxxx type Maximum operating insulation voltage 2 — Vpk 1130 TLPxxx type 1424 Vpr Input to output test voltage, method B Vpr=1.875×VIORM, 100% production test tp=1 s, partial discharge
TLP748J(F) 价格&库存

很抱歉,暂时无法提供与“TLP748J(F)”相匹配的价格&库存,您可以联系我们找货

免费人工找货