TLP785(GR,F)

TLP785,TLP785F TOSHIBA Photocoupler IRED & Photo−Transistor TLP785, TLP785F TLP785 Office Equipment Home Electric Appliances Solid-State Relays Switching Power Supplies Contactless Controller Outputs Simplex/Multiplex Data Transmission Unit: mm The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to an infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5000 Vrms (min)). TLP785F is a lead forming type for the long creepage surface mounting of TLP785. • TLP785: 7.62 mm pitch type DIP4 • TLP785F: 10.16 mm pitch type DIP4 • Collector-emitter voltage: 80 V (min) • Current transfer ratio: 50% (min) TOSHIBA 11-5L1 Weight: 0.25 g (typ.) TLP785F Rank GB: 100% (min) • Isolation voltage: 5000 Vrms (min) • UL-recognized : UL 1577, File No.E67349 • cUL-recognized :CSA Component Acceptance Service No.5A Unit: mm File No.E67349 • VDE-approved : EN 60747-5-5 (Note 1) • CQC-approved: GB4943.1, GB8898 China Factory • SEMKO-approved : EN 62368-1 Note 1 : When a VDE approved type is needed, please designate the Option(D4). • Construction mechanical rating 7.62 mm Pitch Standard Type 10.16 mm Pitch TLPxxxF Type Creepage distance 7.0 mm (min) 8.0 mm (min) Clearance 7.0 mm (min) 8.0 mm (min) Insulation thickness 0.4 mm (min) 0.4 mm (min) Inner creepage distance 4.0 mm (min) 4.0 mm (min) TOSHIBA 11-5L102 Weight: 0.25 g (typ.) Pin Configurations (top view) 1 4 2 3 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector Start of commercial production 2010-11 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-03-11 TLP785,TLP785F Current Transfer Ratio (Note) Type TLP785 Classification (Note 1) Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min Max Marking of Classification None 50 600 Blank Rank Y 50 150 YE Rank GR 100 300 GR Rank BL 200 600 BL Rank GB 100 600 GB Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B Note 1: e.g. rank GB: TLP785 (GB) Note: Application type name for certification test, please use standard product type name, e.g. TLP785 (GB): TLP785 Absolute Maximum Ratings (Note) (Ta = 25°C) Characteristics Forward current Forward current derating (Ta ≥ 39°C) LED Pulse forward current (Note 2) Power dissipation Symbol Rating Unit IF 60 mA ΔIF / °C −0.7 mA / °C IFP 1 A PD 90 mW ΔPD / °C −0.9 mW / °C Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 80 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Power dissipation (single circuit) PC 150 mW ΔPC / °C −1.5 mW / °C Tj 125 °C Operating temperature range Topr −55 to 110 °C Storage temperature range Tstg −55 to 125 °C Lead soldering temperature (10 s) Tsol 260 °C Total package power dissipation PT 240 mW ΔPT / °C −2.4 mW / °C BVS 5000 Vrms Detector Power dissipation derating (Ta ≥ 39°C) Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (Note 3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: Pulse Width: 100 μs or less, 100 Hz frequency Note 3: AC, 60 s., R.H. ≤ 60%. Apply voltage to LED pin and detector pin together. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-03-11 TLP785,TLP785F Recommended Operating Conditions (Note) Characteristics Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 0.01 0.1 μA VCE = 24 V ,Ta = 85 °C ― 0.6 50 μA V = 0 V, f = 1 MHz ― 6 ― pF Min Typ. Max Unit 50 ― 600 100 ― 600 ― 60 ― 30 ― ― ― ― 0.4 ― 0.2 ― ― ― 0.4 Min Typ. Max Unit ― 0.8 ― pF 1×1012 1014 ― Ω 5000 ― ― Vrms Collector dark current Capacitance (collector to emitter) ID(ICEO) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristics Current transfer ratio Saturated CTR Symbol IC / IF IC / IF (sat) Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA Collector−emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB % % V Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Capacitance (input to output) CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS © 2019 Toshiba Electronic Devices & Storage Corporation AC, 60 s 3 2019-03-11 TLP785,TLP785F Switching Characteristics (Ta = 25°C) Characteristics Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time ton Storage time ts Turn−off time toff Test Condition VCC = 10 V, IC = 2 mA RL = 100 Ω RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (fig. 1) Min Typ. Max ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 1.5 ― ― 25 ― ― 50 ― Unit μs μs IF IF VCC RL ts VCE VCC 4.5 V VCE 0.5 V ton toff fig. 1: Switching time test circuit Surface-Mount Lead Form Option TLP785(LF6) 11-5L106 TOSHIBA Weight: TLP785F(LF7) Unit: mm © 2019 Toshiba Electronic Devices & Storage Corporation 11-5L107 TOSHIBA 0.24 g (typ.) Weight: 4 Unit: mm 0.25 g (typ.) 2019-03-11 TLP785,TLP785F Option: Specifications for Embossed-Tape Packing; (TP6) / (TP7) 1. Applicable Package Package Name Product Type DIP4LF6 TLP785 DIP4LF7 TLP785F 2. Product Naming System Type of package used for shipment is denoted by a symbol suffix after a product number. The method of classification is as below. (Example1) TLP785 (BL−TP6,F [[G]]/RoHS COMPATIBLE(Note) Tape type CTR Rank Device name (Example2) TLP785F (BL−TP7,F [[G]]/RoHS COMPATIBLE(Note) Tape type CTR Rank Device name Note: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronics equipment. 3. Tape Dimensions 3.1 Orientation of Device in Relation to Direction of Tape Movement Device orientation in the recesses is as shown in Figure 2. Tape feed P 1pin indication Figure2 Device Orientation 3.2 Tape Packing Quantity:2000 devices per reel © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-03-11 TLP785,TLP785F 3.3 Empty Device Recesses Are as Shown in Table 1. Table1 Empty Device Recesses Occurrences of 2 or more successive empty device recesses Single empty recesses device Standard Remarks 0 device Within any given 40mm section of tape, not including leader and trailer 6 devices (max) per reel Not including leader and trailer 3.4 Start and End of Tape The start of the tape has 30 or more empty holes. The end of the tape has 50 or more empty holes. 3.5 Tape Specification [1] TLP785(TP6) / TLP785F(TP7) ･Tape material: Synthetic Resin ･Dimensions: The tape dimensions are as shown in Figure 3. Unit: mm Figure 3 Tape Forms A B W F T © 2019 Toshiba Electronic Devices & Storage Corporation TP6 Type TP7 Type 5.1±0.1 10.6±0.1 16.0±0.3 7.5±0.1 4.2±0.15 5.05±0.1 12.35±0.1 24.0±0.3 11.5±0.1 4.4±0.1 6 2019-03-11 TLP785,TLP785F 3.6 Reel Specification [1] TLP785(TP6) / TLP785F(TP7) ･Material: Synthetic Resin ･Dimensions: The reel dimensions are as shown in Figure 4. 4.0±0.5 2.0±0.5 W2 φ330 max φ100±1.5 φ13.0±0.5 W1 W1 W2 TP6 Type 16.5ｔｙｐ 23max TP7 Type 24.4typ 30.4max Unit: mm Figure 4 Reel Forms 4. Packing Two reels of photocouplers are packed in a shipping carton. 5. Label Indication The carton bears a label indicating the product number, the symbol representing classification of standard, the quantity, the lot number and the Toshiba company name. 6. Ordering Information When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as shown in the following example. (Example) TLP785(BL−TP6,F 4000pcs. Quantity (must be a multiple of 4000) [[G]]/RoHS COMPATIBLE(Note 1) Tape type CTR Rank Device name Note: The order code may be suffixed with a letter or a digit. Please contact your nearest Toshiba sales representative for more details. Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronics equipment. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-03-11 TLP785,TLP785F 7. Soldering and Storage 7.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used.  When using soldering reflow The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. Fig. 7.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used  When using soldering flow Preheat the device at a temperature of 150 °C (package surface temperature) for 60 to 120 seconds. Mounting condition of 260 °C within 10 seconds is recommended. Flow soldering must be performed once.  When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260 °C or within 3 seconds not exceeding 350 °C Heating by soldering iron must be done only once per lead. 7.2. Precautions for General Storage  Avoid storage locations where devices may be exposed to moisture or direct sunlight.  Follow the precautions printed on the packing label of the device for transportation and storage.  Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively.  Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions.  Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads.  When restoring devices after removal from their packing, use anti-static containers.  Do not allow loads to be applied directly to devices while they are in storage.  If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-03-11 TLP785,TLP785F EN 60747-5-5 ‘Option: (D4)’ Attachment: Specification for EN 60747-5-5 option: (D4) Types: TLP785, TLP785F Type designations for ‘option: (D4) ’, which are tested under EN 60747 requirements. e.g.: TLP785(D4-GR-LF6,F D4: EN 60747 option GR: CTR rank name LF6: standard lead bend name F: [[G]]/RoHS COMPATIBLE(Note 1) Note: Use TOSHIBA standard type number for safety standard application. e.g. TLP785(D4-GR-LF6,F  TLP785 Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronics equipment. EN 60747 Isolation Characteristics Description Symbol Rating Unit Application classification I−IV I−III for rated mains voltage ≤ 300 Vrms for rated mains voltage ≤ 600 Vrms Climatic classification Pollution degree Maximum operating insulation voltage TLP785 TLP785F Input to output test voltage, Vpr = 1.6×VIORM, type and sample test tp = 10 s, partial discharge < 5pC TLP785 Input to output test voltage, Vpr = 1.875×VIORM, 100% production test tp = 1 s, partial discharge < 5pC TLP785 TLP785F TLP785F Highest permissible overvoltage (transient overvoltage, tpr = 60s) Safety limiting values (max. permissible ratings in case of fault) current (input current) Psi = 0mW power (output or total power dissipation) temperature Insulation resistance, VIO = 500 V, Ta=25°C © 2019 Toshiba Electronic Devices & Storage Corporation 9 VIORM Vpr Vpr ― 55 / 115 / 21 ― 2 ― 890 1140 1424 1824 1670 2140 Vpk Vpk Vpk VTR 8000 Vpk Isi Psi Ts 400 700 175 mA mW °C Rsi ≥1012 Ω 2019-03-11 TLP785,TLP785F Insulation Related Specifications 7.62 mm pitch TLPxxx type 10.16 mm pitch TLPxxxF type 8.0 mm Minimum creepage distance Cr 7.0 mm Minimum clearance Cl 7.0 mm Minimum insulation thickness ti 0.4 mm CTI 175 Comparative tracking index 8.0 mm (1) If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value. (e.g.at a standard distance between soldering eye centres of 7.5mm). If this is not permissible, the user shall take suitable measures. (2) This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. VDE test sign: Marking on product for EN 60747 4 Marking on packing for EN 60747 Marking Example: TLP785, TLP785F P Lot No. Part No. (or abbreviation code) CTR Rank Marking 4: Mark for option (D4) 1pin indication © 2019 Toshiba Electronic Devices & Storage Corporation 10 2019-03-11 TLP785,TLP785F Figure 1 Partial discharge measurement procedure according to EN 60747 Destructive test for qualification and sampling tests. Method A (for type and sampling tests, destructive tests) t1, t2 t3, t4 tp(Measuring time for partial discharge) tb tini Figure 2 VINITIAL(8kV) V Vpr(1424 V for TLP785) (1824 V for TLP785F) = 1 to 10 s =1s = 10 s = 12 s = 60 s VIORM(890 V for TLP785) (1140 V for TLP785F) 0 t1 tini t3 tP t2 tb Partial discharge measurement procedure according to EN 60747 Non-destructive test for100% inspection. Method B t3, t4 tp(Measuring time for partial discharge) tb Vpr(1670 V for TLP785) (2140 V for TLP785F) V (for sample test,nondestructive test) VIORM(890 V for TLP785) (1140 V for TLP785F) = 0.1 s =1s = 1.2 s Isi (mA) 3 t tP t3 Figure t t4 tb t4 Dependency of maximum safety ratings on ambient temperature 500 1000 400 800 600 300  Isi 200 400 Psi  100 0 Psi (mW) 0 25 50 75 100 200 125 150 0 175 Ta (°C) © 2019 Toshiba Electronic Devices & Storage Corporation 11 2019-03-11 TLP785,TLP785F I F - Ta 100 200 Collector power dissipation PC (mW) This curve shows the maximum limit to the forward current. 80 I F (mA) P C - Ta Forward current 60 40 20 0 -20 0 20 40 60 80 100 120 120 80 This curve shows the maximum limit to the 40 collector power dissipation. 0 -20 20 0 40 60 80 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) ∆ V F / ∆ Ta - I F IF-VF 120 100 -3 Ta=25˚C -2.2 -1.8 -1.4 -1 IF (mA) -2.6 10 Forward current Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) 160 1 0.1 -0.6 0.1 1 Forward current 10 100 0.4 IF (mA) 0.9 1.4 1.9 Forward voltage VF (V) IFP – VFP Pulse forward current IFP (mA) 1000 Pulse width ≤ 10 μs Repetitive frequency=100 Hz Ta=25°C 100 10 1 0 0.4 0.8 1.2 1.6 2 2.4 Pulse forward voltage VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 12 2019-03-11 TLP785,TLP785F IC-VCE I C E O - Ta 80 10 Ta=25˚C 1 Collector current IC (mA) Collector dark current ID (μA ) VCE =24 V 0.1 0.01 0.001 60 50 30 20 15 40 10 20 5 I F= 2 m A 0.0001 0 40 20 60 80 0 100 0 2 6 Collector-emitter voltage Ambient temperature Ta (°C) 8 10 VCE (V) IC-IF IC-VCE 40 4 Ta=25˚C Ta=25˚C 30 (mA) 30 IC 20 15 20 Collector current Collector current IC (mA) 50 10 5 10 I F= 2 m A 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage 1 1.2 VCE (V) VCE=5 V VCE=0.4 V IC/IF -IF 1000 Forward current IF (mA) Current transfer ratio IC / IF (%) Ta=25˚C 100 10 VCE=5 V VCE=0.4 V 1 0.1 1 10 Forward current IF (mA) 100 NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 13 2019-03-11 TLP785,TLP785F I C - Ta V C E ( s a t ) - Ta 0.2 100 IC=1 mA Collector-Emitter saturation Voltage VCE(sat) (V) 5 10 IC (mA) 10 Collector current IF=5 mA, 20 1 1 IF=0.5 mA VCE=5 V 0.16 0.12 0.08 0.04 0 0.1 -40 -20 0 20 40 60 80 -40 100 Ambient temperature Ta (°C) -20 0 20 40 60 80 100 Ambient temperature Ta (°C) S wi t c h i n g t i m e - R L 1000 Ta=25˚C IF=16 mA VCC=5 V toff Switching time (μs) 100 ts 10 ton 1 1 10 100 Load resistance RL (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 14 2019-03-11 TLP785,TLP785F RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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