TLP797J(F)

TLP797J TOSHIBA Photocoupler Photo Relay TLP797J Telecommunication Measurement Instrumenation FA Unit: mm The TOSHIBA TLP797J consists of an infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package (DIP6). The TLP797J is a bi-directional switch can replace mechanical relays in many applications. • 6 pin DIP (DIP6) • 1-form-A • Peak off-state voltage: 600 V (min) • Trigger LED current: 5 mA (max) • On-state current: 100 mA (max) • On-state resistance: 35 Ω (max) • Isolation voltage: 5000 Vrms (min) • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 • VDE- approved: EN 60747-5-5 JEDEC ― JEITA ― TOSHIBA 11-7A8S Weight: 0.4 g (typ.) (Note 1) Note 1 : When a VDE approved type is needed, please designate the Option(D4). • Schematic Construction mechanical rating Creepage distance Clearance Insulation thickness 7.62 mm pitch standard type 10.16 mm pitch TLPXXXF type 7.0 mm (min) 7.0 mm (min) 0.4 mm (min) 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) Note: When applying safety standard certification, use the standard part number, e.g., TLP797J. Pin Configurations (top view) 1 6 2 5 3 4 1: Anode 2: Cathode 3: N.C. 4: Drain D1 5: Source 6: Drain D2 Start of commercial production 2001-07 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP797J Absolute Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta ≥ 25°C) LED Symbol Rating Unit IF 50 mA ∆IF/°C −0.5 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD /°C -0.5 mW/°C Tj 125 °C VOFF 600 V Diode power dissipation derating (Ta ≥ 25°C) Junction temperature Off-state output terminal voltage A connection On-state current On-state current derating (Ta ≥ 25°C) Detector Output power dissipation Output power dissipation derating (Ta ≥ 25°C) 100 B connection ION 100 C connection 200 A connection −1.0 −1.0 ∆ION/°C B connection C connection −2.0 A connection 430 PO B connection 330 C connection 504 A connection -4.3 ΔPO /°C B connection -3.3 C connection mA mA/°C mW mW / °C -5.04 Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) BVS 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ― ― 480 V Forward current IF 7.5 15 25 mA On-state current ION ― ― 100 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP797J Circuit Connections 5 3 4 A connection 1 6 2 5 3 4 LOAD 1 6 2 5 3 4 B connection LOAD DC 2 LOAD DC 6 AC or DC 1 C connection Individual Electrical Characteristics (Ta = 25°C) Characteristics LED Detector Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF Off-state current IOFF VOFF = 600 V ― ― 1 μA Capacitance COFF V = 0 V, f = 1 MHz ― 120 ― pF Min Typ. Max Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Trigger LED current IFT ION = 100 mA ― 1.6 5 mA Close LED current IFC IOFF = 100 μA 0.1 ― ― mA ION = 100 mA, IF = 10 mA, t < 1 s ― 25 35 ION = 100 mA, IF = 10 mA ― 30 45 ION = 100 mA, IF = 10 mA ― 23 35 ION = 200 mA, IF = 10 mA ― 12 ― Min Typ. Max Unit ― 0.8 ― pF 1014 ― Ω ― ― Vrms A connection On-state resistance B connection RON C connection Ω Isolation Characteristics (Ta = 25°C) Characteristics Capacitance input to output Isolation resistance Isolation voltage Symbol CS RS BVS © 2019 Toshiba Electronic Devices & Storage Corporation Test Condition VS = 0 V, f = 1 MHz VS = 500 V, R.H. ≤ 60 % AC, 60 s 3 5× 1010 5000 2019-06-24 TLP797J Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 10 mA Min Typ. Max Unit ― 0.2 1.5 ms ― 0.2 1 ms (Note) Note: Switching time test circuit IF 1 6 RL VDD IF 2 VOUT VOUT 90% 4 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 4 tOFF 2019-06-24 TLP797J NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 5 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP797J NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-24 TLP797J RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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