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TLP798GA_07

TLP798GA_07

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP798GA_07 - Measurement Instrumentation - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
TLP798GA_07 数据手册
TLP798GA TOSHIBA Photocoupler Photo Relay TLP798GA Telecommunication Data Acquisition Measurement Instrumentation Unit in mm The TOSHIBA TLP798GA consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a six lead plastic DIP package (DIP6). The TLP798GA is a bi-directional switch which can replace mechanical relays in many applications. • • • • • Peak off−state voltage: 400 V (min.) On−state current: 150 mA (max.) (A connection) On−state resistance: 12 Ω (max.) (A connection) Isolation voltage: 5000 Vrms (min.) (A connection) Isolation Thickness: 0.4 mm (min.) TOSHIBA Weight: 0.4 g 11−7A8 Pin Configuration (top view) 1 2 3 6 5 4 1. : ANODE 2. : CATHODE 3. : NC 4. : DRAIN D1 5. : SOURCE 6. : DRAIN D2 Schematic 1 2 6 5 4 1 2007-10-01 TLP798GA Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 25°C) LED Peak forward current (100 μs pulse, 100 pps) Reverse voltage Junction temperature Off−state output terminal voltage A connection On−state RMS current Detector B connection C connection A connection On−state current derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H. ≤ 60%) (Note 2) B connection C connection Tj Tstg Topr Tsol BVS ΔION / °C ION Symbol IF ΔIF / °C IFP VR Tj VOFF Rating 30 −0.3 1 5 125 400 150 200 300 −1.5 −2.0 −3.0 125 −55~125 −40~85 260 5000 °C °C °C °C Vrms mA / °C mA Unit mA mA / °C A V °C V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 2): Device considered a two−terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current On−state current (A connection) Operating temperature Symbol VDD IF ION Topr Min. — 5 — −20 Typ. — 7.5 — — Max. 320 20 150 80 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Circuit Connections 1 2 3 6 5 4 LOAD AC or DC 1 2 3 6 5 4 LOAD DC 1 2 3 6 5 4 LOAD DC A connection B connection C connection 2 2007-10-01 TLP798GA Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Detector Off−state current Capacitance Symbol VF IR CT IOFF COFF Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 400 V V = 0, f = 1 MHz Min. 1.18 — — — — Typ. 1.33 — 30 — — Max. 1.48 10 — 1 — Unit V μA pF μA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Trigger LED current A connection On−state resistance B connection C connection RON Symbol IFT Test Condition ION = 150 mA ION = 150 mA, IF = 5 mA ION = 200 mA, IF = 5 mA ION = 300 mA, IF = 5 mA Min. — — — — Typ. 1 8 4 2 Max. 3 12 6 3 Ω Unit mA Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second (in oil) DC, 1 minute (in oil) Min. — 5 × 10 10 Typ. 0.8 10 14 Max. — — — — — Unit pF Ω Vrms VDC 5000 — — — 10000 10000 Switching Characteristics (Ta = 25°C) Characteristic Turn−on time Turn−off time Symbol tON tOFF Test Condition VDD = 20 V, RL = 200 Ω IF = 5 mA Min. — (Note 3) — Typ. 0.3 0.2 Max. 1.0 1.0 Unit ms (Note 3): Switching time test circuit IF VDD 1 2 6 4 RL VOUT tON IF VOUT 10% tOFF 90% 3 2007-10-01 TLP798GA IF – Ta 100 280 A, C connection PC – Ta Allowable MOS FET power dissipation PC (mW) Allowable forward current IF (mA) 80 B 240 200 160 120 80 40 0 −20 connection 60 40 20 0 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 0 20 40 60 80 100 120 Ambient temperature Ta (°C) IF – V F 100 350 ION (RMS) – Ta (mA) C connection 50 Ta = 25°C (mA) 30 300 250 200 150 100 50 0 −20 IF 10 5 3 ION (RMS) B connection Forward current A connection 1 0.5 0.3 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 On-state current 0 20 40 60 80 100 120 Forward voltage VF (V) Ambient temperature Ta (°C) IFP – DR 5000 3000 Pulse width≦100μs Ta = 25°C (mA) IFP Pulse forward current 1000 500 300 100 50 30 10 3 − 10 3 3 − 10 2 3 − 10 1 3 100 Duty cycle ratio DR 4 2007-10-01 TLP798GA RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-10-01
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