TLP830_07

TLP830(F) TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP830(F) Lead(Pb)-Free Track "00" Sensor For Floppy Disk Drive Detection Of Sub−Scanning Quantity By Image Scanner Various Position Detection Sensor TLP830(F) is a photointerrupter which uses a high−radiant power GaAs LED and a fast−response Si phototransistor. The device is high resolution with a narrow slit pitch. • • • • • • • • Small package: 7.4mm (H), 4.5mm (D) Printed wiring board direct mounting type (with a locating pin). Board thickness: 1mm or less Short lead type enabling automated mounting Gap: 2mm High resolution: Slit width 0.15mm High current transfer ratio: IC/IF = 3% (min) Material of the package : Polybutylene terephthalate (UL94V−0, black color) • Detector side is of visible light cut type. TOSHIBA Weight: 0.4 g (typ.) 11−11C1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current LED Forward current derating Reverse voltage Collector−emitter voltage Emitter−collector voltage Detector Collector power dissipation Collector power dissipation derating (Ta > 25°C) Collector current Operating temperature range Storage temperature range Soldering temperature (5 s) Ta > 25°C Ta > 85°C Symbol IF ΔIF / °C VR VCEO VECO PC ΔPC / °C IC Topr Tstg Tsol Rating 50 −0.33 −2 5 35 5 75 −1 50 −30~85 −40~100 260 Unit mA mA / °C V V V mW mW / °C mA °C °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-10-01 TLP830(F) Product Indication Monthly production lot Production month (Jan.-Dec. are indicated by alphabetes of A-L) Production year (last digit of a.d. is indicated) Operating Ranges Characteristic Supply voltage Forward current Operating temperature Symbol VCC IF Topr Min ― ― −10 Typ. 5 ― ― Max 24 25 75 Unit V mA °C Opto Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Peak emission wavelength Dark current Detector Symbol VF IR λP ID Test Condition IF = 10 mA VR = 5 V IF = 10 mA VCE = 24 V, IF = 0 Min 1.00 ― ― ― Typ. 1.15 ― 940 ― Max 1.30 10 ― 0.1 Unit V μA nm μA Peak sensitivity wavelength λP ― 870 ― nm Current transfer ratio Collector−emitter saturation voltage Rise time Switching times Fall time Response time (1) Response time (2) IC/IF VCE (sat) tr tf t1 t2 VCE = 2 V, IF = 10 mA IF = 20 mA, IC = 0.3 mA VCC = 5 V, IC = 1 mA RL = 1 kΩ VCC = 4.4 V, IC = 13 mA RL = 4 7 k Ω (Note) 3 ― ― ― ― ― ― 0.1 15 15 ― ― 20 0.35 ― ― 80 800 % V Coupled μs Note: t1, t2 test condition VCC=4.4V IF=13mA RL=47kΩ VOUT IF VOUT 0.8V t1 t2 2.5V 2 2007-10-01 TLP830(F) Precaution 1. If the chemical are used for cleaning, the soldered surface only shall be cleaned with chemicals avoiding the whole cleaning of the package. 2. The container is made of polybutylene terephthalate. Oil or chemicals may cause melting or cracks. Check the environment carefully before installing. 3. Shall be mounted on an unwarped surface. 4. A visible light cut−off type photo transistor which blocks light with frequencies of 700nm or above is used. However, the device cannot block ambient light with a wavelength of 700nm or more or sunlight. Install avoiding the disturbance light. 5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1: 1. IC / IF (t) PO (t) = IC / IF (0) PO (0) 3 2007-10-01 TLP830(F) Outline: TOSHIBA Unit: mm Weight: 0.4 g (typ.) Pin Connections 1 2 4 3 1. Anode 2. Cathode 3. Collector 4. Emitter 4 2007-10-01 TLP830(F) IF – Ta Allowable Forward current IF (mA) 80 80 PC – Ta 60 Allowable collector power dissipation PC (mW) 60 40 40 20 20 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IF – VF 50 (typ.) 100 Ta=25°C IC / IF – IF (typ.) (mA) 30 50 VCE = 2 V VCE = 0.4 V Current transfer ratio IC / IF (%) 50 25 0 −25 30 Forward current IF 10 5 Ta=75°C 3 10 5 3 1 3 5 10 30 50 100 1 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Forward voltage VF (V) Forward current IF (mA) 5 2007-10-01 TLP830(F) IC – IF 10 5 Ta=25°C VCE = 2 V VCE = 0.4 V (typ.) 3.0 Ta = 25 °C IC – VCE (typ.) 2.5 20 (mA) 3 (mA) Collector current IC 2.0 Collector current IC 15 1 1.5 10 1.0 IF=5mA 0.5 0.3 0.5 0.1 1 3 5 10 30 50 100 0 0 2 4 6 8 10 12 Forward current IF (mA) Collector-emitter voltage VCE (V) Relative IC – Ta 1.2 (typ.) 5 ID(ICEO) – Ta (typ.) Relative collector current 1.0 0.8 0.6 0.4 VCE = 2 V IF = 20 mA IF = 10 mA IF = 5 m A −20 0 20 40 60 80 100 1 Dark current ID(ICEO) (μA) VCE = 24 V 10 10−1 5 0.2 −40 10−2 Ambient temperature Ta (°C) 10−3 10−4 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2007-10-01 TLP830(F) VCE(sat) – Ta 0.20 IC = 0.5 mA IF = 20 mA (TYP.) Switching time test circuit IF RL VCC VOUT IF VOUT td tr 90% 10% Collector-emitter saturation voltage VCE(sat) (V) 0.16 0.12 0.08 0.04 tf ts 0 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Switching characteristics (non saturated operation) 500 300 Ta = 25 °C VCC = 5 V VOUT = 1 V 100 tr･tf (typ.) 3000 Switching characteristics (saturated operation) Ta = 25 °C IF = 20 mA tf (typ.) Switching time (μs) 1000 V CC = 5 V 500 VOUT ≧ 4.65V 300 ts Switching time (μs) 50 30 td ts 100 50 30 10 tr 10 5 3 1 0.5 0.3 0.1 5 3 1 0.3 0.5 1 3 5 10 30 50 3 5 10 30 50 100 td 300 500 Load resistance RL (kΩ) Load resistance RL (kΩ) 7 2007-10-01 TLP830(F) Detecting position characteristics(2) 1.2 Detecting position characteristics(1) 1.2 IF=10mA VCE=2V Ta=25°C (typ.) (typ.) 1.0 1.0 Relative collector current Relative collector current 0.8 −0 d + 0.8 IF=10mA VCE=2V Ta=25°C shutter 0.6 shutter 0.4 Detection position 0.2 d = 0 ±0.11 mm 0.6 0.4 Detection 0.2 0 3 d position +1.1 d=5.5 −1.5 mm 4 5 6 7 8 9 0 −0.2 −0.1 0 0.1 0.2 0.3 0.4 Distance d (mm) Distance d (mm) Positioning Of Shutter And Device To operate correctly, make sure that the shutter and the device are positioned as shown in the figure below. The shit pitch of the shutter must be set wider than the slit width of the device. Determine the width taking the switching time into consideration. Unit in mm Shutter A Sensor center 6.6min. A′ 4.0max. A-A’ cross section 5.5 8 2007-10-01 TLP830(F) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01