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TLP832

TLP832

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLP832 - Electronic Equipment Such As VCRS And CD Players - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
TLP832 数据手册
TLP832(F) TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP832(F) Lead(Pb)-Free Electronic Equipment Such As VCRS And CD Players Office Equipment Such As Copiers, Printers And Fax Machines Automatic Vending Machines Various Position Detection Sensors The TLP832(F) photointerrupter consists of a GaAs infrared LED and an Si phototransistor. Housed in a short− lead package, this device is ideal for automatic mounting. • • • • • • • • • • Designed for direct mounting on printed circuit boards (positioning pins included). Short leads enabling automatic mounting : Lead length 3.4mm ± 0.3mm Board thickness: 1.6mm or less Gap: 5mm Resolution: Slit width = 0.5mm High current transfer ratio: IC/IF = 5% (min) High temperature operation: Topr = 95°C (max) High response speed: tr, tf = 15μs (typ.) Detector impermeable to visible light package material: Polybutylene terephthalate (UL94V−0, black) TOSHIBA Weight: 0.58 g (typ.) 11−14F1 1 2007-10-01 TLP832(F) Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating Reverse voltage Collector−emitter voltage Emitter−collector voltage Detector Collector power dissipation Collector power dissipation derating (Ta > 25°C) Collector current Operating temperature Storage temperature Soldering temperature (5 s) (Note 1) LED 25°C < Ta ≦ 85°C Ta > 85°C Symbol IF ΔIF / °C VR VCEO VECO PC ΔPC / °C IC Topr Tstg Tsol Rating 50 −0.33 −2 5 35 5 75 −1 50 −30~85 −40~100 260 Unit mA mA / °C V V V mW mW / °C mA °C °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: At the location of 1.5mm from the resin package bottom Markings Monthly lot number Month of manufacture (January to December denoted by letters A to L respectively) Year of manufacture (last digit of year of manufacture) Operating Ranges Characteristic Supply voltage Forward current Operating temperature Symbol VCC IF Topr Min ― ― −10 Typ. 5 ― ― Max 24 25 75 Unit V mA °C 2 2007-10-01 TLP832(F) Optical And Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Peak emission wavelength Detector Dark current Peak sensitivity wavelength Current transfer ratio Coupled Collector−emitter saturation voltage Rise time Fall time Symbol VF IR λP ID (ICEO) λP IC / IF VCE (sat) tr tf VCE = 2V, IF = 10mA IF = 20mA, IC = 0.5mA VCC = 5V, IC = 1mA, RL = 1kΩ IF = 10mA VR = 5V IF = 10mA VCE = 24V, IF = 0 Test Condition Min 1.00 ― ― ― ― 5 ― ― (Note 2) ― Typ. 1.15 ― 940 ― 870 ― 0.1 15 15 Max 1.30 10 ― 0.1 ― 100 0.35 50 50 Unit V μA nm μA nm % V μs (Note 2): Switching time measurement circuit and waveform VCC RL VOUT IF IF VOUT td tr tf ts 90% 10% Precautions 1. When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent. Chemical residue on the LED emitter or the phototransistor may adversely affect the optical characteristics of the device and may drastically reduce the conversion efficiency. 2. Care must taken in relation to the environment in which the device is to be installed. Oil or chemicals may cause the package to melt or crack. 3. Mount the device on a level surface. 4. Keep the device away from external light. Although the phototransistor is of low optical sensitivity, the device may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it. 5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1. IC / IF (t) PO (t) = IC / IF (0) PO (0) 3 2007-10-01 TLP832(F) Package Dimensions 11-14F1 Unit: mm Weight: 0.58 g (typ.) Pin Connection 1 2 1.Anode 2.Cathode 3.Collector 4.Emitter 4 3 4 2007-10-01 TLP832(F) Stick Specification Of TLP832(F) 15.8 Top view 9.4 6.4 Unit:mm Unless otherwise specified, tolerance:±0.3mm Material:Polyvinyl chloride (PVC) TOSHIBA ANTISTATIC MADE IN JAPAN Φ3.15 Cross section 0.6 10.8 14.6 650.0±1.5 633 1.6 5.0 3.3 TOSHIBA ANTISTATIC MADE IN JAPAN (note) : Marking color is red. 4.0 14.8 5 2007-10-01 TLP832(F) ○Packing Format Pack 100 devices are packed in a magazine and put it in a carton. The carton contains 20 magazines. Stopper pin Stopper TLP832(F) Magazine Plastic adhesive tape Quality assurance seal Barcode label Carton containing 20 magazines 85mm 680mm 95mm Magazine containing 100 devices ○Label Product number:TLP832 Add. Code:(F) P/N TYPE ADD.C NOTE TLP832 Q´TY Quantity PCS. Lot number Toshiba code Barcode TOSHIBA MADE IN JAPAN 6 2007-10-01 TLP832(F) IF – Ta 80 80 PC – Ta Allowable forward current IF (mA) Allowable collector power dissipation PC (mW) 60 60 40 40 20 20 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IF – VF 50 30 (typ.) 100 Ta = 25 °C VCE = 2 V 50 VCE = 0.4 V IC/IF – IF (mA) Current transfer ratio IC /IF (%) 30 Sample 2 Forward current IF 10 5 Ta=75°C 3 50 1 0.8 25 10 Sample 1 5 3 0 1.1 −25 1 3 5 10 30 50 100 1.2 1.3 1.4 0.9 1.0 Forward voltage VF (V) Forward current IF (mA) IC – IF 10 Ta = 25 °C VCE = 2 V 5 VCE = 0.4 V 5 6 Ta = 25 °C IC – VCE (typ.) 20 (mA) 3 (mA) 4 Collector current IC Sample 2 1 Sample 1 Collector current IC 15 3 10 2 IF = 5 mA 0.5 0.3 1 0.1 1 3 5 10 30 50 100 0 0 2 4 6 8 10 12 Forward current IF (mA) Collector-emitter voltage VCE (V) 7 2007-10-01 TLP832(F) Relative 1.2 IC – Ta (typ.) 5 ID(ICEO) – Ta (typ.) Relative collector current 1.0 0.8 VCE = 2 V IF = 20 mA IF = 10 mA IF = 5 mA 1 VCE = 24 V ID(ICEO) (μA) 0.6 10 −1 10 5 0.4 Dark current 0.2 −40 10 −2 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 10 −3 10 −4 0 20 40 60 80 100 120 Ambient temperature Ta (°C) VCE(sat) – Ta 0.20 IC = 0.5 mA IF = 20 mA 0.16 (typ.) 500 300 Switching characteristics (non saturated operation) Ta = 25 °C VCC = 5 V VOUT = 1 V 100 tr, tf (typ.) Collector-emitter saturation Voltage VCE(sat) (V) Switching time (μs) 0.12 50 30 td ts 0.08 0.04 10 5 3 0 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 1 0.5 0.3 0.1 0.3 0.5 1 3 5 10 30 50 Switching characteristics (saturated operation) 3000 Ta = 25 °C IF = 20 mA 1000 VCC = 5 V 500 VOUT ≧ 4.65 V ts tf Load resistance RL (kΩ) (typ.) Switching time (μs) 300 100 50 30 tr 10 5 3 1 td 3 5 10 30 50 100 300 500 Load resistance RL (kΩ) 8 2007-10-01 TLP832(F) Detection position Characteristics(1) 1.2 (typ.) 1.2 IF = 10 mA Detection position Characteristics(2) (typ.) IF = 10 mA 1.0 VCE = 2 V Ta = 25 °C 1.0 VCE = 2 V Ta = 25 °C Relative collector current 0.8 −0+ d Shutter Relative collector current 0.8 Shutter 0.6 0.6 d 0.4 Detection position 0.2 0 0.4 0.2 0 −3 −2 −1 0 1 2 Detection position d=0±0.3mm 3 4 d=7.95−1.35mm 5 6 7 8 9 10 11 12 +1.25 Distance d (mm) Distance d (mm) Relative Positioning Of Shutter And Device For normal operation position the shutter and the device as shown in the figure below. By considering the device’s detection direction characteristic and switching time, determine the shutter slit width and pitch. Shutter A A´ Unit:mm Center of sensor 9.2min 6.6max 7.95 Cross section between A and A´ 9 2007-10-01 TLP832(F) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-10-01
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