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TLYE16TP

TLYE16TP

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLYE16TP - TOSHIBA LED Lamp - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
TLYE16TP 数据手册
TL(RE,RME,SE,OE,YE)16TP(F) TOSHIBA LED Lamp TLRE16TP(F),TLRME16TP(F), TLSE16TP(F),TLOE16TP(F),TLYE16TP(F) Panel Circuit Indicator Unit: mm • • • • • • • • Lead(Pb)-free products (lead: Sn-Ag-Cu) 5 mm package InGaAℓP technology All plastic mold type Transparent lens High intensity light emission Excellent low current light output Applications: outdoor message signboards, safety equipment, automotive use, etc Lineup Product Name TLRE16TP(F) TLRME16TP(F) TLSE16TP(F) TLOE16TP(F) TLYE16TP(F) Color Red Red Red Orange Yellow InGaAlP Material JEDEC JEITA TOSHIBA ― ― ― Maximum Ratings (Ta = 25°C) Product Name TLRE16TP(F) TLRME16TP(F) TLSE16TP(F) TLOE16TP(F) TLYE16TP(F) Forward Current IF (mA) 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 Weight: 0.31 g Operating Temperature Topr (°C) Storage Temperature Tstg (°C) −40~100 −40~120 For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: info@marktechopto.com 1 2005-09-15 TL(RE,RME,SE,OE,YE)16TP(F) Electrical and Optical Characteristics (Ta = 25°C) Product Name Typ. Emission Wavelength λd TLRE16TP(F) TLRME16TP(F) TLSE16TP(F) TLOE16TP(F) TLYE16TP(F) Unit 630 626 613 605 587 λP (644) (636) (623) (612) (590) nm ∆λ 20 23 20 20 17 IF 20 20 20 20 20 mA Luminous Intensity IV Min 272 272 476 850 476 Typ. 800 1200 1500 2000 1500 mcd IF 20 20 20 20 20 mA Forward Voltage VF Typ. 1.9 1.9 1.9 2.0 2.0 V Max 2.4 2.4 2.4 2.4 2.4 IF 20 20 20 20 20 mA Reverse Current IR Max 50 50 50 50 50 µA VR 4 4 4 4 4 V Precautions • • • Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2005-09-15 TL(RE,RME,SE,OE,YE)16TP(F) TLRE16TP(F) IF – VF 100 Ta = 25°C 50 3000 Ta = 25°C IV – IF V (mA) (mcd) Luminous intensity IV 1000 30 Forward current IF 10 100 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C IV Relative luminous intensity 1 Relative luminous intensity −20 0 20 40 60 0.8 0.6 0.5 0.3 0.4 0.2 0.1 80 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (mA) 80 IF – Ta 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current IF 60 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 3 2005-09-15 TL(RE,RME,SE,OE,YE)16TP(F) TLRME16TP(F) IF – VF 100 Ta = 25°C 50 10000 Ta = 25°C IV – IF (mA) 30 (mcd) Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 Forward current IF 10 5 3 IV 1 1.6 1000 100 2.3 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C 5 3 Relative luminous intensity Relative luminous intensity −20 0 20 40 60 0.8 IV 0.6 1 0.5 0.3 0.4 0.2 0.1 80 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (mA) 80 IF – Ta 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current IF 60 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 4 2005-09-15 TL(RE,RME,SE,OE,YE)16TP(F) TLSE16TP(F) IF – VF 100 Ta = 25°C 50 10000 Ta = 25°C IV – IF (mA) 30 (mcd) Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 Forward current IF 10 5 3 IV 1 1.6 1000 100 2.3 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C IV Relative luminous intensity 1 Relative luminous intensity −20 0 20 40 60 0.8 0.6 0.5 0.3 0.4 0.2 0.1 80 0 560 580 600 620 640 660 680 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (mA) 80 IF – Ta 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current IF 60 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2005-09-15 TL(RE,RME,SE,OE,YE)16TP(F) TLOE16TP(F) IF – VF 100 Ta = 25°C 50 10000 Ta = 25°C IV – IF (mA) 30 (mcd) Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 Forward current IF 10 5 3 IV 1 1.6 1000 100 2.3 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C IV Relative luminous intensity 1 Relative luminous intensity −20 0 20 40 60 0.8 0.6 0.5 0.3 0.4 0.2 0.1 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (mA) 80 IF – Ta 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current IF 60 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2005-09-15 TL(RE,RME,SE,OE,YE)16TP(F) TLYE16TP(F) IF – VF 100 Ta = 25°C 50 10000 Ta = 25°C IV – IF (mA) 30 (mcd) Luminous intensity 1.7 1.8 1.9 2.0 2.1 2.2 Forward current IF 10 5 3 IV 1 1.6 1000 100 2.3 10 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Ta = 25°C IV Relative luminous intensity 1 Relative luminous intensity −20 0 20 40 60 0.8 0.6 0.5 0.3 0.4 0.2 0.1 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength λ (nm) Radiation pattern Ta = 25°C (mA) 80 IF – Ta 30° 40° 50° 60° 70° 80° 90° 20° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current IF 60 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 7 2005-09-15 TL(RE,RME,SE,OE,YE)16TP(F) 8 2005-09-15
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