TMD0507-2A

MICROWAVE MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TMD0507-2A TMD0507-2A HIGH POWER P1dB=33.0dBm at 5.1GHz to 7.2GHz HIGH GAIN G1dB=22.0dB at 5.1GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature ( Ta= 25°C ) SYMBOL VDD VGG Pin Tf Tstg UNIT V V W °C °C RATING 15 -10 0.1 -30 ∼ +80 -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Gain Flatness (1)* Gain Flatness (2)** Drain Current*** Input VSWR * ∆G1 at f = 5.9 – 7.2GHz ** ∆G2 at f = 5.1 – 7.2GHz *** IDD = IDD1 + IDD2 + IDD3 ∆G1 ∆G2 IDD VSWRi G1dB SYMBOL P1dB VDD1=VDD2=VDD3 = 10V VGG= -5V dB       1.60  ±1.5 ±2.0 1.90 3.0 dB 20.0 22.0  CONDITION UNIT MIN. TYP. MAX. dBm 32.0 33.0  f = 5.1 – 7.2GHz dB A  The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. June 1998