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TMD5872-2

TMD5872-2

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TMD5872-2 - MICROWAVE POWER MMIC AMPLIFIEMICROWAVE AMPLIFIER - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
TMD5872-2 数据手册
MICROWAVE MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TMD5872-2 TMD5872-2 HIGH POWER P1dB=34.0dBm (TYP.) HIGH POWER ADDED EFFICIENCY ηadd=21% (TYP.) HIGH GAIN G1dB=28.0dB (TYP.) BROADBAND OPERATION f=5.8-7.2GHz ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature ( Ta= 25°C ) SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 15 -10 10 -30 ∼ +80 -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency Input VSWR (small signal) ∆G IDD dB A %       1.2 21 2.0:1 ±2.0 1.6  3.0:1 G1dB SYMBOL f P1dB VDD= 10V VGG= -5V dB 25.0 28.0  CONDITION UNIT MIN. TYP. MAX. GHz dBm 5.8 32.0  34.0 7.2  ηadd VSWRi The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Revised August 2000 TMD5872-2 PACKAGE OUTLINE (2-9E1F) 4-C1.5 11 Unit in mm 2.4 1.0 : 0.25±0.1 0.5 1.2± 0.2 No Connection (Open) : RF Input : VGG : VDD 13.4±0.2 17.8±0.2 8.8±0.2 2.6± 0.2 : RF Output 11 4-R0.5 2.0Min. 8.35±0.2 2.0Min. 1.2± 0.2 2.6± 0.2 : Orientation Tab 0.1±0.05 0.75±0.2 0.254±0.2 Recommended Bias Configuration 7: VDD 1.004±0.2 2.4 MAX. 3pF 3: RF Input 1-3pF TMD5872-2 50 ohm Matching 1-3pF 1,000pF 10-50µF 8: RF Output 50 ohm Matching 10-50µF 2 : VGG 1,000pF 3pF GND : Base Plate 2 TMD5872-2 S-Parameters of TMD5872-2 VDD= 10V, VGG= -5V Freq. (GHz) 5.6 5.7 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3 7.4 MAG 0.33 0.24 0.15 0.13 0.18 0.23 0.26 0.26 0.25 0.24 0.22 0.21 0.20 0.20 0.20 0.19 0.19 0.19 0.21 S11 ANG -60 -64 -56 -23 -6 -8 -15 -22 -29 -34 -37 -39 -43 -49 -57 -73 -96 -127 -159 MAG 38.4 43.4 45.6 46.1 45.6 44.6 43.2 41.6 39.7 37.9 36.2 35.1 34.8 35.1 36.1 37.6 38.4 37.6 34.4 S21 ANG -49 -103 -151 163 122 83 46 10 -23 -55 -86 -117 -146 -177 151 117 81 41 1 MAG 0.0005 0.0005 0.0007 0.0003 0.0004 0.0004 0.0004 0.0003 0.0002 0.0001 0.0000 0.0004 0.0005 0.0003 0.0005 0.0010 0.0006 0.0010 0.0008 S12 ANG -46 -40 -42 -79 -80 -68 -80 -101 -107 -138 -96 -165 -166 171 153 158 153 129 80 MAG 0.17 0.10 0.06 0.07 0.10 0.13 0.13 0.13 0.13 0.13 0.14 0.15 0.17 0.19 0.20 0.21 0.20 0.17 0.12 S22 ANG -93 -112 -161 132 100 80 67 59 56 58 61 61 57 48 35 18 -2 -28 -63 3
TMD5872-2 价格&库存

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