TMD7185-2

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD7185-2 FEATURES n HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN G1dB=28.0dB at 7.1GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 15 -10 10 -30 ∼ +80 -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Input VSWR 3rd Order Intermodulation Distortion IDD VSWRin IM3 Po (S.C.L.)=22.0 dBm G1dB SYMBOL P1dB VDD= 10V VGG= -5V dB A  dBc 27.0   -42 28.0 1.4  -45  1.7 3.0  CONDITIONS UNIT dBm MIN. 32.0 TYP. MAX. 33.0  f = 7.1 – 8.5GHz uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar.2006 TMD7185-2 PACKAGE OUTLINE (2-11E1B) Unit i n mm C2 2.5±0.2 j k l m q p 15 ± 0. 2 10 ± 0.2 o n 6 - 2.54± 0.2 18 ± 0.2 j: No Connect ion k: RF IN l: No Connection m: VGG n: No Connection o: p: q: r: RF OUT No Connection VDD GND 8- 0.4± 0. 1 r 7-R0.4 2.0±0.5 11.0 ± 0.2 2.0±0.5 0.1 ± 0.05 RECOMMENDED BIAS CONFIGURATION 2.5 MAX. 0.5 ± 0.2 0.5 ± 0.2 1.0 ± 0.3 8: VDD 3pF 1-3pF TMD7185-2 50Ω Mat ching 1-3pF 1,000pF 10-50µF 2:RF Input 6:RF Output 50Ω Mat ching 4 : VGG 10-50µF 1,000pF 3pF GND : Base Plate HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operat ing ti me should not exceed 10 seconds at 260°C. Fl anges of devices should be att ached using screws and washers. Recommended t orque i s 0.18-0.20 N·m. 2