TPC6001

TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 20 20 ±12 6 24 2.2 0.7 5.8 3 0.22 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C Pulse (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) JEDEC JEITA TOSHIBA ― ― 2-3T1A Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range Weight: 0.011 g (typ.) Circuit Configuration 6 5 4 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 56.8 178.5 Unit °C/W °C/W 1 2 3 Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle it with caution. 1 2004-07-06 TPC6001 Marking (Note 5) Lot code (month) Lot No. Part No. (or abbreviation code) S2A Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd VDD ∼ 16 V, VGS = 5 V, ID = 6 A − |Yfs| Ciss Crss Coss tr ton VGS 5 V 0V 4.7 Ω ID = 3 A RL = 3.3 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −12 V VDS = 10 V, ID = 200 µA VGS = 2.0 V, ID = 3 A VGS = 2.5 V, ID = 3 A VGS = 4.5 V, ID = 3 A VDS = 10 V, ID = 3 A Min ⎯ ⎯ 20 8 0.5 ⎯ ⎯ ⎯ 7.5 ⎯ ⎯ ⎯ ⎯ VOUT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 35 28 22 15 755 172 222 6 11 32 64 15 10 5 Max ±10 10 ⎯ ⎯ 1.2 60 45 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit µA µA V V VDD ∼ 10 V − Duty < 1%, tw = 10 µs = 2 2004-07-06 TPC6001 Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Pulse drain reverse current Forward voltage (diode) (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 6 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 24 −1.2 Unit A V Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) (a) (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω , IAR = 3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: . • on lower left of the marking indicates Pin 1. 3 2004-07-06 TPC6001 ID – VDS 10 4 6 8 2.5 2 1.8 1.7 16 10 1.6 6 1.5 4 1.4 2 VGS = 1.3 V 0 0 Common source Ta = 25°C Pulse test 0.2 0.4 0.6 0.8 1.0 0 0 20 2.5 4.5 ID – VDS Common source Ta = 25°C Pulse test 2 10, 8, 6 12 1.8 (A) ID Drain current Drain current ID (A) 8 1.6 4 1.4 VGS = 1.2 V 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 14 12 Common source VDS = 10 V Pulse test 0.5 VDS – VGS Common source Ta = 25°C Pulse test VDS (V) Drain-source voltage 0.4 ID (A) 10 8 6 4 25°C 0.3 Drain current 0.2 ID = 6 A 0.1 3A 1.5 A 0 0 2 100°C 0 0 0.5 1 Ta = −55°C 1.5 2 2.5 3 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 100 RDS (ON) – ID |Yfs| (S) 50 Drain-source on resistance RDS (ON) (mΩ) 30 Forward transfer admittance Ta = −55°C 25°C 100°C 30 2V 2.5 V VGS = 4.5 V 10 5 3 10 Common source VDS = 10 V Pulse test 3 Common source Ta = 25°C Pulse test 1 1 3 5 10 30 50 100 1 0.1 0.3 1 3 10 30 100 Drain current ID (A) Drain current ID (A) 4 2004-07-06 TPC6001 RDS (ON) – Ta 100 Common source Pulse test 100 IDR – VDS (A) Drain-source on resistance RDS (ON) (mΩ) 80 30 10 V 5V 1V 3V VGS = 0 V IDR Drain reverse current 60 ID = 3 A, 1.5 A 40 VGS = 2 V 20 6A 10 3 1 VGS = 2.5 V ID = 6 A, 3 A, 1.5 A VGS = 4.5 V ID = 6 A, 3 A, 1.5 A −40 0 40 80 120 160 0.3 0 −80 0.1 0 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1 −1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 1.4 Vth – Ta Common source VDS = 10 V ID = 200 µA Pulse test 3000 (pF) Vth Gate threshold voltage Ciss Coss Crss (V) 1.2 1 0.8 0.6 0.4 0.2 0 −80 1000 Capacitance C 300 100 Common source 30 VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 0.3 1 3 10 30 100 −40 0 40 80 120 160 Drain-source voltage VDS Ambient temperature Ta (°C) PD – Ta 2.5 (1) t = 5 s 30 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0 Dynamic input/output characteristics 12 Common source ID = 6 A Ta = 25°C Pulse test 20 VDS = 16 V 15 8V 10 VGS 5 4V 2 4 VDD = 16 V 4V 8 (W) (V) 2 PD VDS Drain power dissipation Drain-source voltage 6 40 80 120 160 0 0 4 8 12 16 20 24 0 28 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2004-07-06 Gate-source voltage 1.5 VGS (V) 25 8V 10 TPC6001 rth − tw 1000 rth (°C/W) 300 100 Device mounted on a glassepoxy board (b) (Note 2b) Transient thermal impedance 30 10 Device mounted on a glassepoxy board (a) (Note 2a) 3 1 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse tw (s) Safe operating area 100 30 10 ID max (pulse)* 1 ms* (A) 10 ms * 3 1 0.3 0.1 0.03 Drain current ID *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature 0.03 0.1 0.3 1 VDSS max 3 10 30 100 0.01 0.01 Drain-source voltage VDS (V) 6 2004-07-06 TPC6001 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06