TPC6004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6004
Notebook PC Applications Portable Equipment Applications
• • • • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (Note 1) Pulse (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating 20 20 ±12 6 A 24 Unit V V V
Drain current
Drain power dissipation Drain power dissipation
JEDEC
2.2 0.7 5.8 3 0.22 150 −55 to 150 W W mJ A mJ °C °C
― ― 2-3T1A
JEITA TOSHIBA
Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 56.8 178.5 Unit °C/W °C/W
Circuit Configuration
6 5 4
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution.
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2
3
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TPC6004
Marking (Note 5)
Lot code (month) Lot No.
Part No. (or abbreviation code)
S2C
Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Pin #1
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = ±10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −12 V VDS = 10 V, ID = 200 µA VGS = 2.0 V, ID = 3 A Drain-source ON resistance RDS (ON) VGS = 2.5 V, ID = 3 A VGS = 4.5 V, ID = 3 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd VDD ∼ 16 V, VGS = 5 V, ID = 6 A − |Yfs| Ciss Crss Coss tr ton VGS 5 V 0V 4.7 Ω ID = 3 A RL = 3.3 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 3 A Min ⎯ ⎯ 20 8 0.5 ⎯ ⎯ ⎯ 5.5 ⎯ ⎯ ⎯ ⎯ VOUT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 30 25 19 11 1400 165 180 5 10 14 60 17 13 4 Max ±10 10 ⎯ ⎯ 1.2 37 32 24 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit µA µA V V
VDD ∼ 10 V − Duty < 1%, tw = 10 µs =
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Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Pulse drain reverse current Forward voltage (Diode) (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 6 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 24 −1.2 Unit A V
Note 1:
Ensure that the channel temperature does not exceed 150°C. (b) Device mounted on a glass-epoxy board (b)
Note 2: (a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 × 25.4 × 0.8 Unit: (mm)
FR-4 25.4 × 25.4 × 0.8 Unit: (mm)
(a)
(b)
Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω , IAR = 3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1.
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TPC6004
ID – VDS
5 10 8 6 3 4 2 1.8 1.6 Common source Ta = 25°C Pulse test 10 1.8 2 8
ID – VDS
1.7 4 6, 8, 10 6 1.5 4 1.4 2 VGS = 1.2 V 1.3 VGS = 1.2 V 0 0 1 2 3 4 5 Common source Ta = 25°C Pulse test 1.6
4
(A)
ID
Drain current
2
1.4
1.3 1
0 0
0.1
0.2
0.3
0.4
0.5
Drain-source voltage
VDS
(V)
Drain current
ID
(A)
1.5
Drain-source voltage
VDS
(V)
ID – VGS
12 Common source VDS = 10 V Pulse test 0.5
VDS – VGS
Common source Ta = 25°C Pulse test
VDS (V) Drain-source voltage
10
0.4
(A)
8
ID
0.3
Drain current
6 25°C 4
0.2 ID = 6 A 0.1 3A 1.5 A 2 4 6 8 10
2
100°C
Ta = −55°C
0 0
1
2
3
4
5
0 0
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| – ID
100 100
RDS (ON) – ID
|Yfs| (S)
50 30 Ta = −55°C 10 100°C 5 3
Drain-source on resistance RDS (ON) (mΩ)
30
VGS = 2 V 2.5 V 4.5 V
Forward transfer admittance
25°C
10
Common source VDS = 10 V Pulse test
3
Common source Ta = 25°C Pulse test
1 1
3
5
10
30
50
100
1 0.1
0.3
1
3
10
30
100
Drain current ID
(A)
Drain current ID
(A)
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TPC6004
RDS (ON) – Ta
60 Common source Pulse test 100
IDR – VDS
Drain-source on resistance RDS (ON) (mΩ)
ID = 6 A ID = 1.5 A, 3 A ID = 1.5 A, 3 A VGS = 2 V
IDR
(A)
50
30
40
10
10 V 3V
30
Drain reverse current
3
5V 1V VGS = 0 V
20 VGS = 4.5 V 10 VGS = 2.5 V
ID = 1.5 A, 3 A, 6 A
1
0.3
0 −80
−40
0
40
80
120
160
0.1 0
Common source Ta = 25°C Pulse test −0.4 −0.8 −1.2 −1.6 −2.0
Ambient temperature
Ta
(°C)
Drain-source voltage
VDS
(V)
Capacitance – VDS
10000 2.0
Vth – Ta
Common source VDS = 10 V ID = 200 µA Pulse test
3000
(V)
Ciss
(pF)
1000
Gate threshold voltage
C
Vth
1.5
Capacitance
300 Coss 100 Common source 30 VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 0.3 1 Crss
1.0
0.5
3
10
30
100
0 −80
−40
0
40
80
120
160
Drain-source voltage
VDS
Ambient temperature
Ta
(°C)
PD – Ta
2.5 (1) t = 5 s 20 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0
Dynamic input/output characteristics
Common source ID = 6 A 16 Ta = 25°C Pulse test 12 12 16 20
(W)
(V)
2
PD
VDS
Drain power dissipation
Drain-source voltage
8 VDD = 16 V 4 4V 8V
8
4
40
80
120
160
0 0
8
16
20
32
0 40
Ambient temperature
Ta
(°C)
Total gate charge
Qg
(nC)
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Gate-source voltage
1.5
VGS
(V)
TPC6004
rth − tw
1000
rth (°C/W)
300 100
Device mounted on a glassepoxy board (b) (Note 2b)
Transient thermal impedance
30 10 Device mounted on a glassepoxy board (a) (Note 2a)
3 1
0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse
tw (s)
Safe operating area
100 30 ID max (pulsed)* 1 ms* 10 10 ms * 3 1 0.3 0.1 0.03 0.01
Drain current
ID
(A)
*: Single nonrepetitive pulse Ta = 25°C 0.003 Curves must be derated linearly with increase in temperature 0.001 0.01 0.03 0.1 0.3 1
VDSS max 3 10 30 100
Drain-source voltage
VDS
(V)
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TPC6004
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
030619EAA
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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