TPC6006-H(TE85L,F)

TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • High-speed switching • Small gate charge: Qsw = 2.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 59 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 kΩ) VDGR 40 V Gate-source voltage VGSS ±20 V (Note 1) ID 3.9 Pulse (Note 1) IDP 15.6 Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) EAS 7 mJ Avalanche current IAR 3.9 A Repetitive avalanche energy (Note 4) EAR 0.22 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current A JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ ”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. 6 5 4 1 2 3 This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-12-20 TPC6006-H Marking (Note 5) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. S2F Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = 40 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 40 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 25 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 1.9 A ⎯ 78 100 VGS = 10 V, ID = 1.9 A ⎯ 59 75 VDS = 10 V, ID = 1.9 A 3.5 7 ⎯ ⎯ 251 ⎯ ⎯ 18 ⎯ ⎯ 73 ⎯ ⎯ 4 ⎯ ⎯ 9 ⎯ ⎯ 3 ⎯ Duty < = 1%, tw = 10 μs ⎯ 18 ⎯ VDD ∼ − 32 V, VGS = 10 V, ID = 3.9 A ⎯ 4.4 ⎯ VDD ∼ − 32 V, VGS = 5 V, ID = 3.9 A ⎯ 2.4 ⎯ ⎯ 1.0 ⎯ ⎯ 0.8 ⎯ ⎯ 1.3 ⎯ Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-ON time ton Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) tf toff 0V 4.7 Ω Switching time ID = 1.9 A VOUT 10 V RL = 10.5 Ω Drain-source breakdown voltage VDD ∼ − 20 V V V mΩ S pF ns Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW VDD ∼ − 32 V, VGS = 10 V, ID = 3.9 A 2 nC 2007-12-20 TPC6006-H Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Pulse drain reverse current Forward voltage (Diode) Note 1: (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 15.6 A ⎯ ⎯ −1.2 V VDSF IDR = 3.9 A, VGS = 0 V Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 3.9 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. 3 2007-12-20 TPC6006-H ID – VDS 5 3.8 4 ID – VDS 3.6 10 3.4 6 6 Common source Ta = 25°C Pulse test (A) 10 3.2 ID 8 3 Drain Current Drain Current ID (A) 4.5 4 3 2 2.8 1 8 3.8 Common source Ta = 25°C Pulse test 4 8 10 3.4 6 3.2 3 4 2.8 2 VGS = 2.5 V VGS = 2.5 V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0 0 1 (V) 2 4 ID – VGS (V) VDS (A) Drain-source voltage ID Drain Current (V) Common source Ta = 25°C Pulse test 0.4 4 2 Tc = −55°C 100 25 1 2 3 4 Gate-source voltage VGS 0.3 ID = 3.9 A 0.2 1.9 0.1 0.9 0 0 5 (V) 5 10 15 Gate-source voltage |Yfs| – ID VGS Drain-source ON-resistance RDS (ON) (mΩ) 1000 Tc = −55°C 25 100 1 Common source VDS = 10 V Pulse test 1 Drain Current 20 (V) RDS (ON) – ID 100 Forward transfer admittance |Yfs| (S) VDS 10 VDS – VGS 6 0.1 0.1 8 0.5 Common source VDS = 10 V Pulse test 10 6 Drain-source voltage 8 0 0 3.6 VGS = 4.5 V 10 10 0.1 10 ID 100 Common source Ta = 25°C Pulse test 1 Drain Current (A) 4 10 ID (A) 2007-12-20 TPC6006-H RDS (ON) – Ta IDR – VDS 150 100 (A) 100 VGS = 4.5 V IDR ID = 3.9 A 1.9 0.9 Drain reverse current ID = 0.9 , 1.9, 3.9 A 50 VGS = 10 V 0 −80 −40 0 40 Ambient temperature 80 120 Ta 5 10 10 3 Common source Ta = 25°C Pulse test -0.2 (°C) -0.4 Capacitance – VDS Vth (V) (pF) Gate threshold voltage C (V) Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss VDS 1 0.5 0 −80 100 10 1.5 −40 (V) 0 40 80 Ambient temperature Ta (V) 30 Drain-source voltage 1.5 35 VDS 40 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 2 (1) DC 1 (2) t = 5 s 0.5 (2) DC 40 80 Ambient temperature 160 (°C) Dynamic input/output characteristics 2.5 (1) t = 5 s 120 120 Ta (°C) VDD = 32V VGS 10 8 20 8 16 16 15 10 6 VDD = 32 V 4 8 2 5 2 Total gate charge 5 14 12 VDS 25 0 0 160 16 Common source ID = 3.9A Ta = 25°C Pulse test 4 Qg 6 (V) 1 2 VGS Capacitance Coss (W) VDS -1.2 Common source VDS = 10 V ID = 1mA Pulse test PD – Ta PD -1.0 Vth – Ta 100 Drain-source voltage Drain power dissipation -0.8 2.5 Ciss 0 0 -0.6 Drain-source voltage 1000 10 0.1 VGS = 0 V 1 0.1 0 160 1 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 0 (nC) 2007-12-20 TPC6006-H rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Transient thermal impedance rth (°C/W) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) 100 10 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 100 (A) ID max (Pulse)* 1 ms* ID 10 Drain Current 10 ms* 1 *: Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2007-12-20 TPC6006-H RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-12-20