TPC6103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6103
Notebook PC Applications Portable Equipment Applications
• • • • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −12 V) Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −12 −12 ±8 −5.5 −22 2.2 0.7 5.3 −2.75 0.22 150 −55~150 Unit V V V A W W mJ A mJ °C °C
Pulse (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b)
JEDEC JEITA TOSHIBA
― ― 2-3T1A
Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 56.8 178.5 Unit °C/W °C/W
Circuit Configuration
6 5 4
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution.
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2
3
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TPC6103
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V −5 V 4.7 Ω ID = −2.8 A VOUT RL = 2.1 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±8 V, VDS = 0 V VDS = −12 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 8 V VDS = −10 V, ID = −200 µA VGS = −1.8 V, ID = −1.4 A VGS = −2.5 V, ID = −2.8 A VGS = −4.5 V, ID = −2.8 A VDS = −10 V, ID = −2.8 A Min ⎯ ⎯ −12 −4 −0.5 ⎯ ⎯ ⎯ 6.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ −10 V, VGS = −5 V, − ID = −5.5 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 65 42 29 13 1520 330 380 9.5 16 28 74 20 15 5 Max ±10 −10 ⎯ ⎯ −1.2 90 55 35 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit µA µA V V
VDD ∼ −6 V − Duty < 1%, tw = 10 µs =
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition — IDR = −5.5 A, VGS = 0 V Min — — Typ. — — Max −22 1.2 Unit A V
Forward voltage (diode)
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TPC6103
Marking (Note 5)
Lot code (month) Lot No.
Part No. (or abbreviation code)
S3C
Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Pin #1
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s)
FR-4 25.4 × 25.4 × 0.8 Unit: (mm)
FR-4 25.4 × 25.4 × 0.8 Unit: (mm)
(a)
(b)
Note 3: VDD = −10 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −2.75 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1.
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TPC6103
ID – VDS
−5 −5 −1.8 −1.9 −2.5 −4 −2 −3 −4, −4.5 −1.6 −3 −10 −1.7 −8 −2.5 −3 −2
ID – VDS
Common source Ta = 25°C Pulse test −1.9
(A)
(A)
−5 −4 −6 −1.8
ID
Drain current
Drain current
ID
−1.7 −4 −1.6 −2 VGS = −1.4 V 0 0 −1 −2 −3 −4 −5
−2
−1.5
−1
VGS = −1.4 V Common source Ta = 25°C Pulse test −0.4 −0.8 −1.2 −1.6 −2.0
0 0
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID – VGS
−10 Common source VDS = −10 V Pulse test −1
VDS – VGS
Common source Ta = 25°C Pulse test
−8
(V) VDS
100°C
−0.8
ID
(A)
−6
−4 25°C −2 Ta = −55°C 0 0
Drain-source voltage
−0.6
Drain current
−0.4
−0.2 −1.1 A
ID = −4.5 A −2.2 A −2 −4 −6 −8 −10
−0.5
−1
−1.5
−2
−2.5
0 0
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| – ID
100 Common source VDS = −10 V Pulse test 1
RDS (ON) – ID
Common source Ta = 25°C Pulse test
(S) |Yfs|
30
Drain-source on resistance RDS (ON) (mΩ)
Ta = −55°C
0.3
Forward transfer admittance
10 100°C 3 25°C
0.1 −1.8 V −2.5 V 0.03 VGS = −4.5 V
1
0.3
0.1 −0.1
−0.3
−1
−3
−10
−30
−100
0.01 −0.1
−0.3
−1
−3
−10
−30
−100
Drain current
ID (A)
Drain current
ID (A)
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TPC6103
RDS (ON) – Ta
160 Common source Pulse test −100
IDR – VDS
Common source Ta = 25°C Pulse test
Drain-source on resistance RDS (ON) (mΩ)
120
IDR (A) Drain reverse current
−30
80 VGS = −1.8 V ID = −1.4A 40 −2.5 V −4.5 V 0 −80 −40 0 40
−2.8 A −5.5 A −2.8 A
−10
−2.0 −1.8
−4.5
ID = −1.4A
−3
−1 VGS = 0 V
ID = −1.4 A, −2.8 A, −5.5 A
80
120
160
−1 0
0.4
0.8
1.2
1.6
2.0
Ambient temperature
Ta
(°C)
Drain-source voltage
VDS (V)
Capacitance – VDS
10000 −2.0
Vth – Ta
Common source VDS = −10 V ID = −200 µA Pulse test
3000
Vth (V) Gate threshold voltage
−100
(pF)
Ciss 1000 Coss Crss
−1.5
C
Capacitance
300
−1.0
100 Common source Ta = 25°C f = 1 MHz VGS = 0 V −0.3 −1 −3 −10 −30
−0.5
30
10 −0.1
0 −80
−40
0
40
80
120
160
Drain-source voltage
VDS (V)
Ambient temperature
Ta
(°C)
PD – Ta
2.5 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0 −20
Dynamic input/output characteristics
−10 Common source ID = −5.5 A −16 Ta = 25°C Pulse test −2.5 V −12 −6 VDD = −10 V VDD = −10 V −8 −5 −4 −2.5 V 0 0 0 40 −2 −5 V −4 VGS
(W)
(V)
2
−8
Drain power dissipation
Drain-source voltage
40
80
120
160
8
16
24
32
Ambient temperature
Ta
(°C)
Total gate charge Qg (nC)
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Gate-source voltage
1.5
VGS (V)
PD
VDS
TPC6103
rth – tw
1000
(°C/W)
300 100
Device mounted on a glassepoxy board (b) (Note 2b)
rth Transient thermal impedance
30 10
Device mounted on a glassepoxy board (a) (Note 2a)
3 1
0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe operating area
−100 −30 −10 10 ms * −3 −1 −0.3 −0.1 −0.03 −0.01 ID max (pulsed)* 1 ms*
Drain current
ID
(A)
*: Single nonrepetitive pulse Ta = 25°C −0.003 Curves must be derated linearly with increase in temperature −0.001 てデ レ テ グし −0.01 −0.03 −0.1 −0.3 −1
VDSS max −3 −10 −30 −100
Drain-source voltage
VDS (V)
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TPC6103
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
030619EAA
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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