TPC6104

TPC6104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC6104 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±8 −5.5 −22 2.2 0.7 4.9 −2.75 0.22 150 −55~150 Unit V V V A W W mJ A mJ °C °C Drain power dissipation Drain power dissipation JEDEC JEITA TOSHIBA ― ― 2-3T1A Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.011 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 56.8 178.5 Unit °C/W °C/W Circuit Configuration 6 5 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 1 2006-11-16 TPC6104 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr ton VGS 0 V −5 V 4.7 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±8 V, VDS = 0 V VDS = −20 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 8 V VDS = −10 V, ID = −200 µA VGS = −1.8 V, ID = −1.4 A VGS = −2.5 V, ID = −2.8 A VGS = −4.5 V, ID = −2.8 A VDS = −10 V, ID = −2.8 A Min ⎯ ⎯ −20 −12 −0.5 ⎯ ⎯ ⎯ 6 ⎯ ⎯ ⎯ ⎯ ID = −2.8 A VOUT RL = 3.6 Ω ⎯ ⎯ ⎯ ⎯ VDD ∼ −16 V, VGS = −5 V, − ID = −5.5 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 78 49 33 12 1430 200 240 8.5 15 20 66 19 14 5 Max ±10 −10 ⎯ ⎯ −1.2 120 60 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit µA µA V V VDD ∼ −10 V − < 1%, tw = 10 µs Duty = Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition — IDR = −5.5 A, VGS = 0 V Min — — Typ. — — Max −22 1.2 Unit A V Forward voltage (diode) 2 2006-11-16 TPC6104 Marking (Note 5) Lot code (month) Lot No. Part No. (or abbreviation code) S3D Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) (a) (b) Note 3: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −2.75 A Note 4: Repetitive rating;:pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. 3 2006-11-16 TPC6104 ID – VDS −5 −5 −4 −2.5 −3 −2 −10 −1.9 −1.8 −1.7 −8 −5 −2.5 −2.1 ID – VDS −2 (A) (A) −4 −3 −6 −4 −1.8 ID −3 −1.6 Drain current −2 −1.5 VGS = −1.4 V Drain current ID −4 −1.6 −2 −1 VGS = −1.4 V Common source Ta = 25°C Pulse test −1 −2 −3 −4 −5 0 0 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −10 Common source VDS = −10 V Pulse test −1 VDS – VGS Common source Ta = 25°C Pulse test −8 (V) VDS Drain-source voltage 25°C −0.8 ID (A) −6 −0.6 Drain current −4 −0.4 −2 100°C 0 0 Ta = −55°C −0.2 ID = −4.5 A −1.1 A −2 −4 −6 −8 −2.2 A −10 −0.5 −1 −1.5 −2 −2.5 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 Common source VDS = −10 V Pulse test 1000 RDS (ON) – ID Common source Ta = 25°C Pulse test (S) |Yfs| 30 Drain-source on resistance RDS (ON) (mΩ) Ta = −55°C 300 Forward transfer admittance 10 25°C 3 100°C −1.8 V 100 −2.5 V 1 30 VGS = −4.5 V 0.3 0.1 −0.1 −0.3 −1 −3 −10 −30 −100 10 −0.1 −0.3 −1 −3 −10 −30 −100 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPC6104 RDS (ON) – Ta 160 Common source −100 IDR – VDS Common source Ta = 25°C Pulse test Drain-source on resistance RDS (ON) (mΩ) 120 VGS = −1.8 V −2.2 A ID = −1.1A −2.5 V −4.5 A IDR (A) Drain reverse current Pulse test −30 80 −4.5 A ID = −1.1 A, −2.2 A −10 −2.0 −4 −1.8 −3 −1 VGS = 0 V 40 ID = −1.1 A, −2.2 A, −4.5 A −4.5 V 0 −80 −40 0 40 80 120 160 −1 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 −2.0 Vth – Ta Common source VDS = −10 V ID = −200 µA Pulse test 3000 Vth (V) Gate threshold voltage (pF) 1000 Ciss −1.5 C Capacitance 300 Coss Crss 100 Common source Ta = 25°C f = 1 MHz VGS = 0 V −0.3 −1 −3 −10 −30 −100 −1.0 −0.5 30 10 −0.1 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2.5 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0 −20 Dynamic input/output characteristics Common source ID = −6 A Ta = 25°C Pulse test −10 VGS (W) (V) 2 −16 −8 Drain power dissipation Drain-source voltage VDD = −16 V −8 −8 V −8 V −4 V −4 −4 V −2 −4 40 80 120 160 0 0 8 16 24 32 0 40 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2006-11-16 Gate-source voltage 1.5 −12 VDD = −16 V −6 VGS (V) PD VDS TPC6104 rth – tw 1000 (°C/W) 300 100 Device mounted on a glassepoxy board (b) (Note 2b) rth Transient thermal impedance 30 10 Device mounted on a glassepoxy board (a) (Note 2a) 3 1 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area −100 −30 ID max (pulsed)* −10 10 ms * −3 −1 −0.3 −0.1 −0.03 −0.01 1 ms* Drain current ID (A) *: Single nonrepetitive pulse Ta = 25°C −0.003 Curves must be derated linearly with increase in temperature −0.001 −0.01 −0.03 −0.1 −0.3 −1 VDSS max −3 −10 −30 −100 Drain-source voltage VDS (V) 6 2006-11-16 TPC6104 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-16